Freescale Semiconductor
Technical Data
Document Number: MRF281
Rev. 6, 10/2008
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
•
Specified Two--Tone Performance @ 1930 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — --29 dBc
•
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
S--Parameter Characterization at High Bias Levels
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
MRF281SR1
MRF281ZR1
1930-
-1990 MHz, 4 W, 26 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 458B-
-03, STYLE 1
NI-
-200S
MRF281SR1
CASE 458C-
-03, STYLE 1
NI-
-200Z
MRF281ZR1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
±
20
20
0.115
-- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
5.74
Unit
°C/W
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate--Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
74
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
NOTE --
CAUTION
-- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MRF281SR1 MRF281ZR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 25 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.1 A)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
C
oss
C
rss
—
—
—
5.5
3.3
0.17
—
—
—
pF
pF
pF
V
GS(th)
V
GS(q)
V
DS(on)
2.4
3
0.18
3.2
4.1
0.24
4
5
0.30
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Functional Tests
(In Freescale Test Fixture)
Common--Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
G
ps
11
12.5
—
dB
η
30
—
—
%
IRL
—
--16
--10
dB
IMD
—
--31
—
dBc
MRF281SR1 MRF281ZR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Z
o
= 25
Ω
f = 2000 MHz
Z
in
ARCHIVE INFORMATION
f = 2000 MHz
f = 1500 MHz
f = 1500 MHz
V
DD
= 26 V, I
DQ
= 25 mA, P
out
= 4 W (PEP)
f
MHz
1500
1600
1700
1800
1900
2000
Z
in
Z
in
Ω
3.15 -- j5.3
3.1 -- j3.8
3.1 -- j2.3
3.1 -- j0.7
3.1 + j0.9
3.1 + j2.4
Z
OL
*
Ω
15.5 -- j13.6
14.7 -- j12.5
14.0 -- j11.7
13.4 -- j11.0
12.8 -- j10.1
12.2 -- j9.2
= Complex conjugate of source impedance.
Z
OL
* = Complex conjugate of the optimum load
impedance at given output power, voltage,
IMD, bias current and frequency.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
in
Z
*
OL
Figure 1. Series Equivalent Input and Output Impedance
MRF281SR1 MRF281ZR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
Z
OL
*
PACKAGE DIMENSIONS
ccc
M
T A
M
1
M
B
M
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT
CENTERLINE UNLESS OTHERWISE NOTED.
INCHES
MIN
MAX
0.180
0.190
0.140
0.150
0.082
0.116
0.047
0.053
0.004
0.010
0.004
0.006
0.025
0.031
0.060
0.110
0.197
0.203
0.177
0.183
0.147
0.153
0.157
0.163
------
0.020
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
4.572
4.83
3.556
3.81
2.083
2.946
1.194
1.346
0.102
0.254
0.102
0.152
0.635
0.787
1.524
2.794
5.004
5.156
4.496
4.648
3.734
3.886
3.988
4.14
------
0.508
0.254 REF
0.381 REF
(INSULATOR)
R
(LID)
ccc
M
T A
M
B
M
4X
Z
DIM
A
B
C
D
E
F
H
K
M
N
R
S
Z
bbb
ccc
2X
K
S
(INSULATOR)
ccc
M
T A
M
2
2X
B
M
B
ARCHIVE INFORMATION
bbb
ccc
M
M
M
T A
B
M
M
B
M
(FLANGE)
B
T A
(LID)
N
E
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
C
H
A
(FLANGE)
A
T
SEATING
PLANE
CASE 458B-
-03
ISSUE E
NI-
-200S
MRF281SR1
ccc
M
T A
M
M
B
M
F
R
(LID)
(INSULATOR)
4X
Y
Z
1
ccc
M
T A
M
B
M
3
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H (PACKAGE COPLANARITY): THE
BOTTOM OF LEADS AND REFERENCE PLANE T
MUST BE COPLANAR WITHIN DIMENSION H.
INCHES
MIN
MAX
0.180
0.190
0.140
0.150
0.082
0.116
0.047
0.053
0.004
0.010
0.004
0.006
0.000
0.004
0.050
0.090
0.197
0.203
0.177
0.183
0.147
0.153
0.157
0.163
0.020
0.040
------ R .020
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
4.572
4.830
3.556
3.810
2.083
2.946
1.194
1.346
0.102
0.254
0.102
0.152
0.000
0.102
1.270
2.286
5.004
5.156
4.496
4.648
3.734
3.886
3.988
4.140
0.508
1.016
------ R .508
0.254 REF
0.381 REF
S
(INSULATOR)
ccc
M
T A
M
B
M
(FLANGE)
B
2
2X
B
2X
D
M
K
bbb
T A
M
B
M
ccc
M
T A
(LID)
M
B
M
N
DIM
A
B
C
D
E
F
H
K
M
N
R
S
Y
Z
bbb
ccc
H
C
E
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
(FLANGE)
A
T
SEATING
PLANE
CASE 458C-
-03
ISSUE E
NI-
-200Z
MRF281ZR1
MRF281SR1 MRF281ZR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
D
3
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