Freescale Semiconductor
Technical Data
Document Number: MRF282
Rev. 15, 5/2006
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications
with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
multicarrier amplifier applications.
•
Specified Two--Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts PEP
Power Gain — 10.5 dB
Efficiency — 28%
Intermodulation Distortion — --31 dBc
•
Specified Single--Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts CW
Power Gain — 9.5 dB
Efficiency — 35%
•
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large--Signal
Impedance Parameters
•
RoHS Compliant
•
Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
MRF282SR1
MRF282ZR1
2000 MHz, 10 W, 26 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 458B-
-03, STYLE 1
NI-
-200S
MRF282SR1
CASE 458C-
-03, STYLE 1
NI-
-200Z
MRF282ZR1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
±
20
60
0.34
-- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
4.2
Unit
°C/W
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate--Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1.0
1.0
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
NOTE --
CAUTION
-- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF282SR1 MRF282ZR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 50
μAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 75 mAdc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
C
oss
C
rss
—
—
—
15
8.0
0.45
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
V
GS(q)
2.0
—
3.0
3.0
0.4
4.0
4.0
0.6
5.0
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Functional Tests
(In Freescale Test Fixture)
Common--Source Power Gain
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common--Source Power Gain
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 10 W PEP, I
DQ
= 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common--Source Power Gain
(V
DD
= 26 Vdc, P
out
= 10 W CW, I
DQ
= 75 mA, f = 2000.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 10 W CW, I
DQ
= 75 mA, f = 2000.0 MHz)
G
ps
10.5
11.5
—
dB
η
28
—
—
%
IMD
—
--31
--28
dBc
IRL
—
--14
--9
dB
G
ps
10.5
11.5
—
dB
η
28
—
—
%
IMD
—
--31
--28
dBc
IRL
—
--14
--9
dB
G
ps
η
9.5
35
11.5
40
—
—
dB
%
MRF282SR1 MRF282ZR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
R2
V
GG
R3
R4
Z6
C7
C8
Z12
C10
C11
C13
R5
B3
B4
C16
+
V
DD
C18
+
C3
R1
B1
C4
B2
C5
RF
INPUT
Z5
Z1
Z2
C1
Z3
C2
C6
Z4
Z7
Z8
C9
DUT
Z9
Z10
C12
Z11
Z13
Z14
C14
C15
Z15
Z16
C17
RF
OUTPUT
ARCHIVE INFORMATION
Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic
-
Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values
-
Designators
B1, B4
B2, B3
C1, C2, C9
C3
C4, C5, C13, C16
C6
C7
C8
C10
C11
C12
C14
C15
C17
C18
R1
R2, R5
R3, R4
WS1, WS2
Description
Surface Mount Ferrite Beads, 0.120″ x 0.333″ x 0.100″, Fair Rite #2743019446
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
0.8--8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL
10
mF,
35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
0.1
mF
Chip Capacitors, Kemet #CDR33BX104AKWS
200 pF Chip Capacitor, ATC #100B201JCA500X
18 pF Chip Capacitor, ATC #100B180KP500X
39 pF Chip Capacitor, ATC #100B390JCA500X
27 pF Chip Capacitor, ATC #100B270JCA500X
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
0.6--4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
0.5 pF Chip Capacitor, ATC #100B0R5BCA500X
15 pF Chip Capacitor, ATC #100B150JCA500X
0.1 pF Chip Capacitor, ATC #100B0R1BCA500X
22
mF,
35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
12
Ω,
1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
91
Ω,
1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B910JT
Beryllium Copper Wear Blocks 0.010″ x 0.235″ x 0.135″ NOM
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type “N” Jack Connectors, Omni--Spectra # 3052--1648--10
4--40 Ph Head Screws, 0.125″ Long
4--40 Ph Head Screws, 0.188″ Long
4--40 Ph Head Screws, 0.312″ Long
4--40 Ph Rec. Hd. Screws, 0.438″ Long
RF Circuit Board
3″ x 5″ Copper Clad PCB, Glass Teflon
®
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.491″ x 0.080″ Microstrip
0.253″ x 0.080″ Microstrip
0.632″ x 0.080″ Microstrip
0.567″ x 0.080″ Microstrip
1.139″ x 0.055″ Microstrip
0.236″ x 0.055″ Microstrip
0.180″ x 0.325″ Microstrip
0.301″ x 0.325″ Microstrip
0.439″ x 0.325″ Microstrip
0.055″ x 0.325″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Raw Board
Material
0.636″ x 0.055″ Microstrip
0.303″ x 0.055″ Microstrip
0.463″ x 0.080″ Microstrip
0.105″ x 0.080″ Microstrip
0.452″
±
0.085″ x 0.080″ Microstrip
0.910″
±
0.085″ x 0.080″ Microstrip
0.030″ Glass Teflon
®
, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300--55--22,
ε
r
= 2.55
R1
R2
C4
B2
C5
C7
C8
C13
R5
C10
C11
B4
B3
C16
C18
B1
R3
R4
C3
C6
WS1
WS2
C15
C14
C17
ARCHIVE INFORMATION
C12
MRF282
Rev--0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout
-
MRF282SR1 MRF282ZR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C1
C2
C9
R1
R2
R3
R4
R5
R6
V
GG
+
C1
B1
C4
B2
C7
B3
C5
C8
C14
C11
B5
C10
B4
C13
B6
C16
+
V
DD
RF
INPUT
Z1
L1
Z2
C2
Z3
L2
Z4
C3
C6
Z5
L3
Z6
Z7
C9
DUT
Z8
C12
Z9
L4
Z10
L5
Z11
C17
RF
OUTPUT
C15
ARCHIVE INFORMATION
Figure 3. 1810 - 1880 MHz Broadband Test Circuit Schematic
-
Table 5. 1810 - 1880 MHz Broadband Test Circuit Component Designations and Values
-
Designators
B1, B2, B3, B4, B5, B6
C1, C16
C2, C9, C12, C17
C3
C4, C13
C5, C14
C6, C8, C11, C15
C7, C10
L1
L2
L3, L4
L5
R1, R2, R3
R4, R5, R6
W1, W2
Description
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
470
μF,
63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L
0.6--4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL
0.8--8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL
0.1
μF
Chip Capacitors, Kemet #CDR33BX104AKWS
100 pF Chip Capacitors, ATC #100B101JCA500X
12 pF Chip Capacitors, ATC #100B120JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA50X
3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.053″ Long, 6.0 nH
5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.091″ Long, 15 nH
9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.078″ Long, 10 nH
12
Ω,
1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT
0.08″ x 0.13″ Resistors, Garrett Instruments #RM73B2B120JT
Beryllium Copper 0.010″
x 0.110″ x 0.210″
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.122″ x 0.08″ Microstrip
0.650″ x 0.08″ Microstrip
0.160″ x 0.08″ Microstrip
0.030″ x 0.08″ Microstrip
0.045″ x 0.08″ Microstrip
0.291″ x 0.08″ Microstrip
0.483″ x 0.330″ Microstrip
Z8
Z9
Z10
Z11
Raw Board
Material
0.414″ x 0.330″ Microstrip
0.392″ x 0.08″ Microstrip
0.070″ x 0.08″ Microstrip
1.110″ x 0.08″ Microstrip
0.030″ Glass Teflon
®
, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300--55--22,
ε
r
= 2.55
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