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SiT8924

Automotive AEC-Q100 Oscillator

The Smart Timing Choice

Features



Applications



AEC-Q100 with extended temperature range (-55°C to 125°C)

Frequencies between 1 MHz and 110 MHz accurate to 6 decimal

places

Supply voltage of 1.8V or 2.25V to 3.63V

Excellent total frequency stability as low as ±25 ppm

Industry best G-sensitivity of 0.1 PPB/G

Low power consumption of 3.8 mA typical at 1.8V

LVCMOS/LVTTL compatible output

Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,

7.0 x 5.0 mm x mm

RoHS and REACH compliant, Pb-free, Halogen-free and

Antimony-free

Automotive, extreme temperature and other high-rel electronics

Infotainment systems, collision detection devices, and in-vehicle

networking

Power train control

Electrical Specifications

Table 1. Electrical Characteristics

[1, 2]

Parameters

Output Frequency Range

Frequency Stability

Symbol

f

F_stab

Min.

1

-25

-30

-50

Operating Temperature Range

(ambient)

T_use

-40

-55

Supply Voltage

Current Consumption

Vdd

Idd

1.62

2.25

–

Duty Cycle

Rise/Fall Time

Output High Voltage

DC

Tr, Tf

VOH

45

–

90%

Typ.

–

1.8

–

4.0

3.8

–

1.5

1.3

–

Max.

110

+25

+30

+50

+105

+125

1.98

3.63

4.8

4.5

55

3

2.5

–

Unit

MHz

ppm

°C

V

mA

%

ns

Vdd

Condition

Refer to

Table 13 and Table 14

for a list supported frequencies

Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and

variations over operating temperature, rated power supply

voltage and load (15 pF ± 10%).

Frequency Range

Frequency Stability and Aging

Operating Temperature Range

Extended Industrial, AEC-Q100 Grade 2

Automotive, AEC-Q100 Grade 1

Extended Temperature, AEC-Q100

All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V

and 3.3V are supported.

No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V

No load condition, f = 20 MHz, Vdd = 1.8V

All Vdds

Vdd = 2.25V - 3.63V, 20% - 80%

Vdd = 1.8V, 20% - 80%

IOH = -4 mA (Vdd = 3.0V or 3.3V)

IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)

IOH = -2 mA (Vdd = 1.8V)

IOL = 4 mA (Vdd = 3.0V or 3.3V)

IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)

IOL = 2 mA (Vdd = 1.8V)

Pin 1, OE

Pin 1, OE logic high or logic low

Measured from the time Vdd reaches 90% of final value

f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles

f = 75 MHz, 2.25V to 3.63V

f = 75 MHz, 1.8V

f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz

f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz

Supply Voltage and Current Consumption

LVCMOS Output Characteristics

Output Low Voltage

VOL

–

10%

Vdd

Input Characteristics

Input High Voltage

Input Low Voltage

Input Pull-up Impedence

Startup Time

Enable/Disable Time

RMS Period Jitter

RMS Phase Jitter (random)

VIH

VIL

Z_in

T_start

T_oe

T_jitt

T_phj

70%

–

100

–

1.6

1.9

0.5

1.3

–

30%

–

10

130

Jitter

2.5

3.0

–

ps

Vdd

k

ms

ns

Startup and Resume Timing

Notes:

1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.

2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and

at 25 °C temperature.

SiTime Corporation

Rev. 1.01

990 Almanor Avenue, Sunnyvale, CA 94085

(408) 328-4400

www.sitime.com

Revised June 18, 2015

SiT8924

Automotive AEC-Q100 Oscillator

The Smart Timing Choice

Table 2. Pin Description

1

2

3

4

Symbol

Output Enable

OE/NC

No Connect

GND

OUT

VDD

Power

Output

Power

H

[3]

:

Functionality

specified frequency output

L: output is high impedance. Only output driver is disabled.

Any voltage between 0 and Vdd or Open

[3]

: Specified frequency

output. Pin 1 has no function.

Electrical ground

[4]

Oscillator output

Power supply voltage

[4]

GND

2

Top View

OE/NC

1

4

VDD

3

OUT

Notes:

3. In OE mode, a pull-up resistor of 10k or less is recommended if pin 1 is not externally driven.

If pin 1 needs to be left floating, use the NC option.

4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

N

Figure 1. Pin Assignments

Table 3. Absolute Maximum Limits

Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the

IC is only guaranteed within the operational specifications, not at absolute maximum ratings.

Parameter

Storage Temperature

Vdd

Electrostatic Discharge

Soldering Temperature (follow standard Pb free soldering guidelines)

Junction Temperature

[5]

Min.

-65

-0.5

–

Max.

150

4

2000

260

150

Unit

°C

V

°C

Note:

5.Exceeding this temperature for extended period of time may damage the device.

Table 4. Thermal Consideration

[6]

Package

7050

5032

3225

2520

2016



JA, 4 Layer Board

(°C/W)

142

97

109

117

152



JA, 2 Layer Board

(°C/W)

273

199

212

222

252



JC, Bottom

(°C/W)

30

24

27

26

36

Note:

6. Refer to JESD51 for

JA

and

JC

definitions, and reference layout used to determine the

JA

and

JC

values in the above table.

Table 5. Maximum Operating Junction Temperature

[7]

Max Operating Temperature (ambient)

105°C

125°C

Maximum Operating Junction Temperature

115°C

135°C

Note:

7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.

Table 6. Environmental Compliance

Parameter

Mechanical Shock

Mechanical Vibration

Temperature Cycle

Solderability

Moisture Sensitivity Level

Condition/Test Method

MIL-STD-883F, Method 2002

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method 2003

MSL1 @ 260°C

Rev. 1.01

Page 2 of 12

www.sitime.com

SiT8924

Automotive AEC-Q100 Oscillator

The Smart Timing Choice

Test Circuit and Waveform

[8]

Vdd

Vout

Test

Point

tr

80% Vdd

tf

4

Power

Supply

0.1µF

3

15pF

(including probe

and fixture

capacitance)

50%

20% Vdd

High Pulse

(TH)

Period

Low Pulse

(TL)

1

2

Vdd

OE/NC Function

1k



Figure 2. Test Circuit

Note:

8. Duty Cycle is computed as Duty Cycle = TH/Period.

Figure 3. Waveform

Timing Diagrams

u

90% Vdd

Vdd

50% Vdd

Pin 4 Voltage

T_start

No Glitch

during start up

[9]

OE Voltage

T_oe

CLK Output

HZ

CLK Output

HZ

T_start: Time to start from power-off

T_oe: Time to re-enable the clock output

Figure 4. Startup Timing (OE Mode)

Vdd

OE Voltage

50% Vdd

Figure 5. OE Enable Timing (OE Mode Only)

T_oe

CLK Output

HZ

T_oe: Time to put the output in High Z mode

Figure 6. OE Disable Timing (OE Mode Only)

Note:

9 SiT8924 has “no runt” pulses and “no glitch” output during startup or resume.

Rev. 1.01

Page 3 of 12

www.sitime.com

SiT8924

Automotive AEC-Q100 Oscillator

The Smart Timing Choice

Performance Plots

[10]

DUT 1

DUT 6

DUT 2

DUT 7

DUT 3

DUT 8

DUT 4

DUT 9

DUT 5

DUT 10

1.8 V

2.5 V

2.8 V

3V

3.3 V

25

20

15

6.0

Frequency (ppm)

0

20

40

60

80

100

5.5

5.0

4.5

4.0

3.5

3.0

10

)

m

5

p

(

y

c

0

n

e

u

q

e

‐5

r

F

Idd (mA)

‐10

‐15

‐20

‐25

‐55

‐35

‐15

5

25

45

65

85

105

125

Tem p er atur

(°C)

Temperature

e ( C)

Frequency (MHz)

Figure 7. Idd vs Frequency

Figure 8. Frequency vs Temperature

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

4.0

55

54

RMS period jitter (ps)

3.5

53

Duty cycle (%)

0

20

40

60

80

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

52

51

50

49

48

47

46

45

0

20

40

60

80

100

Frequency (MHz)

Figure 9. RMS Period Jitter vs Frequency

Figure 10. Duty Cycle vs Frequency

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

2.5

2.0

Rise time (ns)

Fall time (ns)

1.5

1.0

0.5

0.0

-55

-35

-15

5

25

45

65

85

105

125

0.0

-55

-35

-15

5

25

45

65

85

105

125

Temperature (°C)

Figure 11. 20%-80% Rise Time vs Temperature

Figure 12. 20%-80% Fall Time vs Temperature

Rev. 1.01

Page 4 of 12

www.sitime.com

SiT8924

Automotive AEC-Q100 Oscillator

The Smart Timing Choice

Performance Plots

[10]

1.8 V

2

1.9

1.8

1.7

)

1.6

s

p

(

1.5

J

P

I

1.4

1.3

1.2

1.1

1

10

30

2.5 V

2.8 V

3.0 V

3.3 V

1

0.9

0.8

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

IPJ (ps)

50

70

90

110

)

0.7

s

p

(

J

P

I

0.6

0.5

0.4

0.3

10

30

50

70

90

110

Frequency (MHz)

Figure 13. RMS Integrated Phase Jitter Random

(12 kHz to 20 MHz) vs Frequency

[11]

Figure 14. RMS Integrated Phase Jitter Random

(900 kHz to 7.5 MHz) vs Frequency

[11]

Notes:

10. All plots are measured with 15 pF load at room temperature, unless otherwise stated.

11. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies up to 40 MHz.

Rev. 1.01

Page 5 of 12

www.sitime.com

参数名称	属性值
类型	MEMS（硅）
频率	40MHz
输出	LVCMOS
电压 - 电源	3.3V
频率稳定度	±50ppm
工作温度	-40°C ~ 125°C
电流 - 电源（最大值）	4.8mA
等级	AEC-Q100
安装类型	表面贴装
封装/外壳	4-SMD，无引线
大小/尺寸	0.079" 长 x 0.063" 宽（2.00mm x 1.60mm）
高度 - 安装（最大值）	0.032"（0.80mm）

SIT8924AA-73-33N-40.000000D

SIT8924AA-73-33N-40.000000D概述

SIT8924AA-73-33N-40.000000D规格参数

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