FMBSA06
FMBSA06
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
• Sourced from Process 12.
C1
E
NC
B
C
pin #1 C
SuperSOT
TM
-6 single
Mark: .1G1
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
80
80
4.0
500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
Parameter
Test Condition
I
C
= 1.0mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, I
B
= 10mA
I
C
= 10mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 2.0V, f = 100MHz
100
100
100
0.25
1.2
V
V
MHz
Min.
80
4.0
0.1
0.1
Max.
Units
V
V
µA
µA
Collector-Emitter Sustaining Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation *
Thermal Resistance, Junction to Ambient, total
Max.
700
180
Units
mW
°C/W
* Device mounted on a 1 in 2 pad of 2 oz copper.
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
FMBSA06
Typical Characteristics
h
FE
- TYP ICAL PULSED CURRE NT GAIN
vs Collector Current
200
V
CE
= 1V
150
125 °C
V
CESAT
- COLLECTOR EM ITTE R VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
0.4
0.3
0.2
0.1
- 40 °C
β
β
= 10
100
25 °C
125 °C
25 °C
50
- 40 °C
0.001
I
C
0.01
0.1
- COLLECTOR CURRENT (A)
0
0.1
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
β
= 10
β
- 40 °C
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTE R VOLTAGE (V)
Voltage vs Collector Current
Collector Current
1
- 40 °C
0.8
0.6
0.4
0.2
0
V
CE
= 5V
25 °C
125 °C
0.8
β
25 °C
125 °C
0.6
β
0.4
0.1
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
Collector Saturation Region
2
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 80 V
1
T A = 25°C
1.5
0.1
1
0.01
I
C
=
1 mA
10 mA
100 mA
0.5
0.001
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
0
4000
10000
20000
30000
50000
I
B
- BASE CURRENT (uA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector Saturation Region
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
Ω
Ω
FMBSA06
Typical Characteristics
(Continued)
BV
CER
- BREAKDOWN VOLTAGE (V)
Between Emitter-Base
117
116
100
f = 1.0 MHz
CAPACITANCE (pF)
C
ib
10
115
114
113
112
111
0.1
C
ob
1
1
10
100
1000
0.1
0.1
1
10
100
RESISTANCE (k
Ω
)
Ω
V
CE
- COLLECTOR VOLTAGE (V)
Figure 7. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
Figure 8. Input and Output Capacitance
vs Reverse Voltage
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
vs Collector Current
400
V
CE
= 5V
350
300
250
200
150
100
1
10
20
50
100
I
C
- COLLECTOR CURRENT (mA)
Figure 9. Gain Bandwidth Product
vs Collector Current
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
FMBSA06
Package Dimensions
SuperSOT
TM
-6
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2004 Fairchild Semiconductor Corporation
Rev. I13
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