FMBS5401
FMBS5401
PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
E
NC
C1
B
C
pin #1 C
SuperSOT
TM
-6 single
Mark: .4S1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
-150
-160
-5.0
-600
-55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -1.0mA, I
B
= 0
I
C
= -100µA, I
E
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
a
= 100°C
V
EB
= -3.0V, I
C
=0
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, V
CE
= -10V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -250µA, V
CE
= -5.0V, R
S
= 1.0KΩ
f = 10Hz to 15.7KHz
100
50
60
50
Min.
-150
-160
-5.0
-50
-50
-50
Max.
Units
V
V
V
nA
µA
nA
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics *
240
-0.2
-0.5
-1.0
-1.0
300
6.0
8.0
V
V
V
V
MHz
pF
dB
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characterics
f
T
C
ob
N
F
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004
FMBS5401
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation *
Thermal Resistance, Junction to Ambient, total
Max.
700
180
Units
mW
°C/W
* Device mounted on a 1 in 2 pad of 2 oz coppe
©2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004
FMBS5401
Typical Characteristics
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
200
0.4
V
CE
= 5V
β
β
= 10
150
0.3
125 C
o
100
0.2
o
25 C
125 C
o
25 C
o
β
0.1
50
- 40 C
o
- 40 C
1
10
100
o
0
1E-4
1E-3
0.01
0.1
1
0.0
0.1
I
C
- COLLECTOR CURRENT (A)
I
C
- COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation
Voltage vs Collector Current
1.0
0.8
- 40 C
25 C
o
o
V
BC(ON)
- BASE-EMITTER ON VOLTAGE (V)
1.0
V
BESAT
- BASE-EMITTER VOLTAGE (V)
0.8
- 40 C
25 C
o
o
0.6
0.6
125 C
o
125 C
o
0.4
β
0.4
β
= 10
1
10
V
CE
= 5V
0.2
0.1
β
100
0.2
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation
Voltage vs Collector Current
Figure 4. Base-Emitter On Voltage vs
Collector Current
BV
CER
- BREAKDOWN VOLTAGE (V)
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 10 0V
220
210
10
200
1
190
0.1
180
25
50
75
100
125
T
A
- AM BIENT TE MPE RATURE (
°
C)
150
170
0.1
1
10
100
1000
RESISTANCE (k
Ω
)
Ω
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
©2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004
FMBS5401
Typical Characteristics
(Continued)
80
f = 1.0 MHz
CAPACITANCE (pF)
60
40
C
eb
20
C
cb
0
0.1
1
10
100
V
R
- REVERSE BIAS VOLTAGE(V)
Figure 7. Input and Output Capacitance
vs Reverse Voltage
©2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004
FMBS5401
Package Dimensions
SuperSOT
TM
-6
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004
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