KSC2786
KSC2786
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
• High Current Gain Bandwidth Product : f
T
=600MHz (TYP)
• High Power Gain : G
PE
=22dB at f=100MHz
TO-92S
1
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
20
4
20
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
f
T
C
ob
C
c·rbb’
NF
G
PE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Time Constant
Noise Figure
Power Gain
Test Condition
I
C
=10µA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=1mA
f=31.9MHz
V
CE
=6V, I
C
=1mA
R
S
=50Ω, f=100MHz
V
CE
=6V, I
C
=1mA
f=100MHz
18
400
40
0.72
0.1
600
1.2
12
3.0
22
15
5.0
0.3
Min.
30
20
4
0.1
0.1
240
V
V
MHz
pF
ps
dB
dB
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2786
Typical Characteristics
20
18
I
B
= 110
µ
A
10
V
CE
= 6 V
I
C
[mA], COLLECTOR CURRENT
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
I
B
= 90
µ
A
I
B
= 80
µ
A
I
B
= 70
µ
A
I
B
= 60
µ
A
I
B
= 50
µ
A
I
B
= 40
µ
A
I
B
= 30
µ
A
I
B
= 20
µ
A
I
B
= 10
µ
A
I
C
[mA], COLLECTOR CURRENT
I
B
= 100
µ
A
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
16
18
20
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristics
Figure 2. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
10000
V
CE
= 6V
V
CE
= 6V
h
FE
, DC CURRENT GAIN
1000
100
100
10
1
10
10
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. f
T
- I
C
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 10 I
B
1
V
BE
(sat)
C
ob
[pF], OUTPUT CAPACITANCE
f = 1MHz
I
E
= 0
1
0.1
V
CE
(sat)
0.01
0.1
0.1
1
10
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Saturation Voltage
Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
