KST5088/5089
KST5088/5089
Low Noise Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KST5088
: KST5089
V
CEO
Collector-Emitter Voltage
: KST5088
: KST5089
V
EBO
I
C
P
C
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
30
25
4.5
50
350
150
V
V
V
mA
mW
°C
35
30
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KST5088
: KST5089
Collector-Emitter Breakdown Voltage
: KST5088
: KST5089
Collector Cut-off Current
: KST5088
: KST5089
Emitter Cut-off Current
DC Current Gain
: KST5088
: KST5089
: KST5088
: KST5089
: KST5088
: KST5089
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
: KST5088
: KST5089
I
C
=100µA, V
CE
=5V
R
S
=10KΩ, f=10Hz to 15.7KHz
3
2
dB
dB
V
CE
=5V, I
C
=100µA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=5V, I
C
=500µA, f=20MHz
V
CB
=5V, I
E
=0, f=100KHz
50
4
300
400
350
450
300
400
900
1,200
Test Condition
I
C
=100µA, I
E
=0
Min.
35
30
I
C
=1mA, I
B
=0
30
25
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
V
EB
=3V, I
C
=0
50
50
50
V
V
nA
nA
nA
Max.
Units
V
V
BV
CEO
I
CBO
I
EBO
h
FE
0.5
0.8
V
V
MHz
pF
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST5088/5089
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 5V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
0.1
1
10
100
0.01
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10
1000
C
ib
[pF] C
ob
[pF], CAPACITANCE
C
ib
f = 1MHz
I
E
= 0
C
ob
f=100KHz
I
E
= 0
C
ib
C
ob
1
V
CE
= 5V
100
10
0.1
1
10
100
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Collector-Base Capaciance
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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