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KSC1845ETA

产品描述TRANS NPN 120V 0.05A TO-92
产品类别半导体    分立半导体   
文件大小300KB,共8页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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KSC1845ETA概述

TRANS NPN 120V 0.05A TO-92

KSC1845ETA规格参数

参数名称属性值
晶体管类型NPN
电流 - 集电极(Ic)(最大值)50mA
电压 - 集射极击穿(最大值)120V
不同 Ib,Ic 时的 Vce 饱和值(最大值)300mV @ 1mA,10mA
电流 - 集电极截止(最大值)50nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)400 @ 1mA,6V
功率 - 最大值500mW
频率 - 跃迁110MHz
工作温度150°C(TJ)
安装类型通孔
封装/外壳TO-226-3,TO-92-3(TO-226AA)(成形引线)
供应商器件封装TO-92-3

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KSC1845ETA相似产品对比

KSC1845ETA KSC1845FBU KSC1845PTA_Q KSC1845FTA KSC1845EBU KSC1845UBU KSC1845PBU KSC1845PTA
描述 TRANS NPN 120V 0.05A TO-92 Bipolar Transistors - BJT NPN Epitaxial Sil Bipolar Transistors - BJT NPN Epitaxial Transistor TRANS NPN 120V 0.05A TO-92 TRANS NPN 120V 0.05A TO-92 TRANS NPN 120V 0.05A TO-92 TRANS NPN 120V 0.05A TO-92 TRANS NPN 120V 0.05A TO-92
晶体管类型 NPN - - - NPN NPN NPN NPN
电流 - 集电极(Ic)(最大值) 50mA - - - 50mA 50mA 50mA 50mA
电压 - 集射极击穿(最大值) 120V - - - 120V 120V 120V 120V
不同 Ib,Ic 时的 Vce 饱和值(最大值) 300mV @ 1mA,10mA - - - 300mV @ 1mA,10mA 300mV @ 1mA,10mA 300mV @ 1mA,10mA 300mV @ 1mA,10mA
电流 - 集电极截止(最大值) 50nA(ICBO) - - - 50nA(ICBO) 50nA(ICBO) 50nA(ICBO) 50nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值) 400 @ 1mA,6V - - - 400 @ 1mA,6V 600 @ 1mA,6V 200 @ 1mA,6V 200 @ 1mA,6V
功率 - 最大值 500mW - - - 500mW 500mW 500mW 500mW
频率 - 跃迁 110MHz - - - 110MHz 110MHz 110MHz 110MHz
工作温度 150°C(TJ) - - - 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ)
安装类型 通孔 - - - 通孔 通孔 通孔 通孔
封装/外壳 TO-226-3,TO-92-3(TO-226AA)(成形引线) - - - TO-226-3,TO-92-3 标准主体(!--TO-226AA) TO-226-3,TO-92-3 标准主体(!--TO-226AA) TO-226-3,TO-92-3 标准主体(!--TO-226AA) TO-226-3,TO-92-3(TO-226AA)(成形引线)
供应商器件封装 TO-92-3 - - - TO-92-3 TO-92-3 TO-92-3 TO-92-3
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