PD - 95179
IRF7307PbF
Generation V Technology
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Ultra Low On-Resistance
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Dual N and P Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
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Lead-Free
Description
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HEXFET
®
Power MOSFET
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
D1
D1
D2
D2
N-Ch
V
DSS
20V
P-Ch
-20V
6
5
P-CHANNEL MOSFET
Top View
R
DS(on)
0.050Ω 0.090Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulse Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
5.7
5.2
4.1
21
2.0
0.016
± 12
5.0
-55 to + 150
-5.0
P-Channel
-4.7
-4.3
-3.4
-17
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
°C/W
10/7/04
IRF7307PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max.
20
-20
0.044
-0.012
0.050
0.070
0.090
0.140
0.70
-0.70
8.30
4.00
1.0
-1.0
25
-25
±100
20
22
2.2
3.3
8.0
9.0
9.0
8.4
42
26
32
51
51
33
4.0
6.0
660
610
280
310
140
170
Units
V
V/°C
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 2.6A
V
GS
= 2.7V, I
D
= 2.2A
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.7V, I
D
= -1.8A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 2.6A
V
DS
= -15V, I
D
= -2.2A
V
DS
= 16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V,
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 12V
N-Channel
I
D
= 2.6A, V
DS
= 16V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 2.6A, R
G
= 6.0Ω,
R
D
= 3.8Ω
P-Channel
V
DD
= -10V, I
D
= -2.2A, R
G
= 6.0Ω,
R
D
= 4.5Ω
Between lead tip
and center of die contact
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
nH
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
2.5
-2.5
A
21
-17
1.0
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
V
-1.0
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
29
44
N-Channel
ns
56
84
T
J
= 25°C, I
F
= 2.6A, di/dt = 100A/µs
22
33
P-Channel
nC
T
J
= 25°C, I
F
= -2.2A, di/dt = 100A/µs
71 110
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
2.6A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-2.2A, di/dt
≤
50A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel
1000
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
IRF7307PbF
1000
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
100
100
10
10
1.5V
20µs PULSE WIDTH
T
J
= 150°C
A
1
10
100
1.5V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
100
1
0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
2.0
T = 25°C
J
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.3A
I
D
, Drain-to-Source Current (A)
1.5
10
1.0
0.5
1
1.5
2.0
2.5
3.0
V
DS
= 15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
A
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
1200
Fig 4.
Normalized On-Resistance
Vs. Temperature
10
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 2.6A
V
DS
= 16V
8
C, Capacitance (pF)
900
C
iss
6
600
C
oss
4
300
C
rss
2
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 11
15
20
25
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
IRF7307PbF
100
N-Channel
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
100us
10
1ms
T
J
= 150°C
T
J
= 25°C
1
0.1
0.0
0.5
1.0
1.5
V
GS
= 0V
2.0
A
2.5
1
0.1
T
A
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
10ms
100
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
6.0
5.0
Fig 8.
Maximum Safe Operating Area
V
DS
V
GS
R
G
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
I
D
, Drain Current (A)
D.U.T.
+
4.0
V
-
DD
3.0
2.0
1.0
Fig 10a.
Switching Time Test Circuit
25
50
75
100
125
150
0.0
T
C
, Case Temperature
( °C)
V
DS
90%
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
50KΩ
12V
.2µF
.3µF
Fig 10b.
Switching Time Waveforms
D.U.T.
+
V
-
DS
4.5V
Q
GS
Q
G
Q
GD
V
GS
3mA
V
G
I
G
I
D
Charge
Current Sampling Resistors
Fig 11a.
Gate Charge Test Circuit
Fig 11b.
Basic Gate Charge Waveform
P-Channel
100
TOP
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
IRF7307PbF
100
-ID , Drain-to-Source Current (A)
10
-ID , Drain-to-Source Current (A)
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
1
1
-1.5V
-1.5V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
100
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
T
J
= 150°C
0.1
1
10
100
A
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 12.
Typical Output Characteristics
100
Fig 13.
Typical Output Characteristics
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -3.6A
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
10
1.5
T
J
= 150°C
1.0
1
0.5
0.1
1.5
2.0
2.5
3.0
V
DS
= -15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
A
0.0
-60
V
GS
= -4.5V
-40
-20
0
20
40
60
80
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 14.
Typical Transfer Characteristics
1500
Fig 15.
Normalized On-Resistance
Vs. Temperature
10
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= -2.2A
V
DS
= -16V
8
C, Capacitance (pF)
C
iss
1000
C
oss
C
rss
500
6
4
2
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 22
15
20
25
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 16.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 17.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Microchip MCU
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