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SIT8918BA-33-33E-4.096000T

产品描述OSC MEMS 4.0960MHZ LVCMOS SMD
产品类别无源元件   
文件大小684KB,共18页
制造商SiTime
标准
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SIT8918BA-33-33E-4.096000T概述

OSC MEMS 4.0960MHZ LVCMOS SMD

SIT8918BA-33-33E-4.096000T规格参数

参数名称属性值
类型MEMS(硅)
频率4.096MHz
功能启用/禁用
输出LVCMOS
电压 - 电源3.3V
频率稳定度±50ppm
工作温度-40°C ~ 125°C
电流 - 电源(最大值)4.5mA
安装类型表面贴装
封装/外壳4-SMD,无引线
大小/尺寸0.197" 长 x 0.126" 宽(5.00mm x 3.20mm)
高度 - 安装(最大值)0.032"(0.80mm)
电流 - 电源(禁用)(最大值)4.1mA

文档预览

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SiT8918B
High Temperature Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
Frequencies between 1 MHz and 110 MHz accurate to 6 decimal
places
Operating temperature from -40°C to 125°C. For -55°C option, refer
to
SiT8920
and
SiT8921
Supply voltage of 1.8V or 2.5V to 3.3V
Excellent total frequency stability as low as ±20 ppm
Low power consumption of 3.5 mA typical at 1.8V
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Industrial, medical, non AEC-Q100 automotive, avionics and
other high temperature applications
Industrial sensors, PLC, motor servo, outdoor networking
equipment, medical video cam, asset tracking systems, etc.
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values
are at 25°C and nominal supply voltage.
Parameters
Output Frequency Range
Symbol
f
Min.
1
Typ.
Max.
110
Unit
MHz
Condition
Refer to
Table 13
for the exact list of supported frequencies
list of supported frequencies
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
Frequency Range
Frequency Stability and Aging
Frequency Stability
F_stab
-20
-25
-30
-50
Operating Temperature Range
(ambient)
T_use
-40
-40
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
Idd
OE Disable Current
Standby Current
I_od
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
45
Output High Voltage
VOH
90%
1.8
2.5
2.8
3.0
3.3
3.8
3.6
3.5
2.6
1.4
0.6
1.0
1.3
1.0
+20
+25
+30
+50
+105
+125
1.98
2.75
3.08
3.3
3.63
3.63
4.7
4.5
4.5
4.5
4.3
8.5
5.5
4.0
55
2.0
2.5
3
ppm
ppm
ppm
ppm
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
mA
A
A
A
%
ns
ns
ns
Vdd
No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V
No load condition, f = 20 MHz, Vdd = 2.5V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state.
Vdd = 1.8V, OE = Low, Output in high Z state.
Vdd = 2.8V to 3.3V, ST = Low, Output is weakly pulled down
Vdd = 2.5V, ST = Low, Output is weakly pulled down
Vdd = 1.8V, ST = Low, Output is weakly pulled down
All Vdds
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
(408) 328-4400
www.sitime.com
Revised June 18, 2015
Extended Industrial
Automotive
Operating Temperature Range
Supply Voltage and Current Consumption
Supply Voltage
LVCMOS Output Characteristics
Output Low Voltage
VOL
10%
Vdd
SiTime Corporation
Rev. 1.01
990 Almanor Avenue, Sunnyvale, CA 94085
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