VS-CPU3006L-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Designed and qualified according to commercial
qualification
3
2
1
1
3
Anode
Anode
2
1
2
Common
cathode
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please see
TO-247 long lead
3-pins
DESCRIPTIONS/APPLICATIONS
VS-CPU30... series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247 long lead 3-pins
2 x 15 A
600 V
1.9 V
24 ns
175 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 146 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
30
230
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
TEST CONDITIONS
MIN.
600
-
-
-
-
-
TYP.
-
1.35
1.1
0.01
12
20
MAX.
-
1.9
1.3
15
200
-
µA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 18-Sep-14
Document Number: 95712
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPU3006L-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = - 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
TYP.
24
36
40
87
5
9
107
430
MAX.
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to case per package
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247 long lead 3-pins
SYMBOL
T
J
, T
Stg
R
thJC
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.1
0.55
-
0.4
6.0
0.21
-
MAX.
175
1.4
0.7
°C/W
40
-
-
-
12
(10)
g
oz.
kgf cm
(lbf
in)
UNITS
°C
CPU3006L
Revision: 18-Sep-14
Document Number: 95712
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPU3006L-M3
www.vishay.com
Vishay Semiconductors
1000
100
175 °C
150 °C
125 °C
1
0.1
0.01
0.001
0.0001
100 °C
75 °C
50 °C
25 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (μA)
2.5
10
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
100
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single
Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 18-Sep-14
Document Number: 95712
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPU3006L-M3
www.vishay.com
Vishay Semiconductors
120
110
100
90
DC
180
Allowable Case Temperature (°C)
170
160
150
140
130
120
See
note
(1)
110
0
5
10
15
20
25
Square
wave (D = 0.50)
80 % rated V
R
applied
I
f
= 15 A, 125 °C
80
t
rr
(ns)
70
60
50
40
30
20
10
100
typical value
1000
I
f
= 15 A, 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
60
900
RMS Limit
800
700
600
I
f
= 15 A, 125 °C
Average Power Loss (W)
50
40
Q
rr
(nC)
30
20
10
0
0
10
20
30
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
500
400
300
200
100
I
f
= 15 A, 25 °C
typical value
1000
40
50
0
100
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 18-Sep-14
Document Number: 95712
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPU3006L-M3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
C
2
-
-
-
-
-
-
-
-
P
3
U
4
30
5
06
6
L
7
-M3
8
1
2
3
4
5
6
7
8
Vishay Semiconductors product
Circuit configuration:
C = common cathode
P = TO-247
U = ultrafast recovery time
Current code (30 = 2 x 15 A)
Voltage code (06 = 600 V)
L = long lead
Environmental digit:
-M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-CPU3006L-M3
QUANTITY PER T/R
30
MINIMUM ORDER QUANTITY
300
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247 3-pins LL
TO-247 3-pins LL
www.vishay.com/doc?95599
www.vishay.com/doc?95593
Revision: 18-Sep-14
Document Number: 95712
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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