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IDT71V546S117PF: 产品描述128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs; 文件大小184KB，共21页; 制造商IDT(艾迪悌); 官网地址http://www.idt.com/

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IDT71V546S117PF概述

128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs

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128K x 36, 3.3V Synchronous

IDT71V546S/XS

SRAM with ZBT™ Feature,

™

Burst Counter and Pipelined Outputs

Features

128K x 36 memory configuration, pipelined outputs

Supports high performance system speed - 133 MHz

(4.2 ns Clock-to-Data Access)

ZBT

Feature - No dead cycles between write and read

cycles

Internally synchronized registered outputs eliminate the

need to control

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

Individual byte write (BW

) control (May tie active)

Three chip enables for simple depth expansion

Single 3.3V power supply (±5%)

Packaged in a JEDEC standard 100-pin TQFP package

clock cycle, and two cycles later its associated data cycle occurs, be it

read or write.

The IDT71V546 contains data I/O, address and control signal regis-

ters. Output enable is the only asynchronous signal and can be used to

disable the outputs at any given time.

A Clock Enable (CEN) pin allows operation of the IDT71V546 to be

suspended as long as necessary. All synchronous inputs are ignored

when

CEN

is high and the internal device registers will hold their previous

values.

There are three chip enable pins (CE

, CE

) that allow the user

to deselect the device when desired. If any one of these three is not active

when ADV/LD is low, no new memory operation can be initiated and any

burst that was in progress is stopped. However, any pending data

transfers (reads or writes) will be completed. The data bus will tri-state two

cycles after the chip is deselected or a write initiated.

The IDT71V546 has an on-chip burst counter. In the burst mode, the

IDT71V546 can provide four cycles of data for a single address presented

to the SRAM. The order of the burst sequence is defined by the

LBO

input

pin. The

LBO

pin selects between linear and interleaved burst sequence.

The ADV/LD signal is used to load a new external address (ADV/LD =

LOW) or increment the internal burst counter (ADV/LD = HIGH).

The IDT71V546 SRAM utilizes IDT's high-performance, high-volume

3.3V CMOS process, and is packaged in a JEDEC standard 14mm x

20mm 100- pin thin plastic quad flatpack (TQFP) for high board density.

◆

Description

The IDT71V546 is a 3.3V high-speed 4,718,592-bit (4.5 Megabit)

synchronous SRAM organized as 128K x 36 bits. It is designed to

eliminate dead bus cycles when turning the bus around between reads

and writes, or writes and reads. Thus it has been given the name ZBT

or Zero Bus Turn-around.

Address and control signals are applied to the SRAM during one

Pin Description Summary

- A

, CE

R/W

CEN

CLK

ADV/LD

LBO

I/O

- I/O

, I/O

- I/O

Address Inputs

Three Chip Enables

Output Enable

Read/Write Signal

Clock Enable

Individual Byte Write Selects

Clock

Advance Burst Address / Load New Address

Linear / Interleaved Burst Order

Data Input/Output

3.3V Power

Ground

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Static

Synchronous

Static

3821 tbl 01

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.

OCTOBER 2008

DSC-3821/05

IDT71V546S117PF相似产品对比

	IDT71V546S117PF	IDT71V546	IDT71V546S100PF	IDT71V546S100PFI	IDT71V546S117PFI	IDT71V546S133PF	IDT71V546S133PFI
描述	128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs	128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs	128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs	128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs	128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs	128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs	128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs

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