SICR5650
SICRB5650
SICRD5650
SICRF5650
Technical Data
Data Sheet N1870, Draft 1
SICR5650
/ SICRB5650 / SICRD5650 / SICRF5650
650V SIC POWER SCHOTTKY RECTIFIER
Features
175°C T
J
operation
Ultra-low switching loss
Switching speeds independent of operating
temperature
Low total conduction losses
High forward surge current capability
High package isolation voltage
Guard ring for enhanced ruggedness and long term
reliability
Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional electrical and life testing can be performed
upon request
Description
SICR5650/ SICRB5650/ SICRD5650/ SICRF5650 are all
single SiC Schottky rectifiers packaged in TO-220AC,
D2PAK, DPAK and ITO-220ACcase. The device is a high
voltage Schottky rectifier that has very low total
conduction losses and very stable switching
characteristics over temperature extremes. The
SICR5650/ SICRB5650/ SICRD5650/ SICRF5650 are ideal
for energy sensitive, high frequency applications in
challenging environments.
Applications
Alternative energy inverters
Power Factor Correction (PFC)
Free-Wheeling diodes
Switching supply output rectification
Reverse polarity protection
SICR5650
SICRB5650
SICRD5650
SICRF5650
TO-220AC
D
2
PAK
DPAK
ITO-220AC
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=105°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
650
5
60
Units
V
A
A
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SICR5650
SICRB5650
SICRD5650
SICRF5650
Technical Data
Data Sheet N1870, Draft 1
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current at DC condition*
Reverse Current *
Junction Capacitance
Series Inductance
Voltage Rate of Change
RSM Isolation Voltage
(t = 1.0 second, R. H. < =30%,
T
A
= 25
C)
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
Condition
@ 5A, Pulse, T
J
= 25
C
@ 5A, Pulse, T
J
= 150
C
@V
R
= rated V
R
T
J
= 25
C
@V
R
= rated V
R
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Clip mounting, the epoxy body away
from the heatsink edge by more than
0.110" along the lead direction.
Clip mounting, the epoxy body is inside
the heatsink.
Screw mounting, the epoxy body is
inside the heatsink.
Typ.
1.5
1.98
5
70
-
-
-
-
-
-
Max.
1.7
2.5
60
250
TBD
TBD
10,000
4500
3500
1500
Units
V
V
A
A
pF
nH
V/s
V
ISO
V
* Pulse width < 300 µs, duty cycle < 2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal Resistance Junction
to Case
Symbol
T
J
T
stg
R
JC
SICR5650
SICRB5650 SICRD5650
-55 to +175
-55 to +175
2.4
2.4
SICRF5650
Units
C
C
2.4
4.2
C/W
Ordering Information
Device
SICR5650
SICRB5650
SICRD5650
SICRF5650
Tube Specification(TO-220AC/ITO-220AC)
Weight
1.8g
1.85g
0.39g
1.8g
Package
TO-220AC
D²PAK
DPAK
ITO-220AC
Shipping
50pcs / tube
800pcs / reel
2500pcs / reel
50pcs / tube
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SICR5650
SICRB5650
SICRD5650
SICRF5650
Technical Data
Data Sheet N1870, Draft 1
Marking Diagram
Where XXXXX is YYWWL
SICR
B/D/F
5
650
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (5A)
= Reverse Voltage (650V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding
resin
Epoxy resin UL:94V-0
Carrier Tape & Reel Specification DPAK
SYMBOL
A
B
C
d
E
F
P0
P
P1
W
Millimeters
Min.
Max.
6.80
2.60
Φ1.45
1.65
7.40
3.90
7.90
1.90
15.90
7.00
2.80
Φ1.65
1.85
7.60
4.10
8.10
2.10
16.30
10.40
10.60
Carrier Tape & Reel Specification D2PAK
SYMBOL
A
B
C
d
E
F
P0
P
P1
W
10.70
16.03
5.11
1.45
1.65
11.40
3.90
15.90
1.90
23.90
Millimeters
Min.
Max.
10.90
16.23
5.31
1.65
1.85
11.60
4.10
16.10
2.10
24.30
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SICR5650
SICRB5650
SICRD5650
SICRF5650
Technical Data
Data Sheet N1870, Draft 1
Mechanical Dimensions TO-220AC
Symbol
A
A1
A2
b
b1
c
D
D1
E
E1
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
Dimensions in millimeters
Min.
4.47
1.17
2.52
0.71
1.17
0.31
14.64
8.50
10.01
9.98
4.98
6.04
13.00
3.56
3.74
2.54
Typical
4.70
1.27
2.69
0.81
1.27
0.38
14.94
8.07
10.16
10.18
5.08
6.24
13.86
3.80
3.84
2.74
5°
4°
4°
Max.
4.85
1.37
2.89
0.96
1.37
0.61
15.24
8.90
10.31
10.38
5.18
6.44
14.08
3.96
4.04
2.94
Mechanical Dimensions DPAK
Millimeters
Min.
Max.
2.20
2.40
0.00
0.127
0.66
0.86
0.46
0.60
6.50
6.70
5.13
5.46
4.83 REF.
6.00
6.20
2.186
2.386
9.70
10.40
2.90 REF.
1.40
1.70
1.60 REF.
0.60
1.00
1.10
1.30
0°
8°
0.00
0.30
5.35 REF.
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.024
0.256
0.264
0.202
0.215
0.190 REF.
0.236
0.244
0.086
0.094
0.381
0.409
0.144 REF.
0.055
0.067
0.063 REF.
0.024
0.039
0.043
0.051
0°
8°
0.000
0.012
0.211 REF.
SYMBOL
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
Φ
Θ
h
V
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SICR5650
SICRB5650
SICRD5650
SICRF5650
Technical Data
Data Sheet N1870, Draft 1
Mechanical Dimensions D
2
PAK
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in millimeters
Min.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
Typical
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
10.16
10.08
2.54
15.1
2.30
1.27
0.25BSC
-
5°
4°
4°
Max.
4.85
0.25
2.89
0.96
0.61
1.37
8.85
10.31
10.18
15.6
2.70
1.40
2.20
8°
Mechanical Dimensions ITO-220AC
Millimeters
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
0.60
15.00
10.16
5.10
6.70
13.20
1.80
1.00
0.80
3.50
3.19
2.70
5°
4°
10°
5°
5°
SYMBOL
A
A1
A2
A3
b
b1
c
D
E
e
H1
L
L1
L2
L3
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.50
2.50
0.50
1.10
0.50
14.80
9.96
-
6.50
12.70
1.60
0.80
0.60
3.30
2.99
2.50
MAX.
4.70
1.50
3.20
2.90
0.85
1.35
0.85
15.20
10.36
-
6.90
13.70
2.00
1.20
1.00
3.70
3.39
2.90
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