STB7102, STB7103, STB7104
0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS
PRELIMINARY DATA
FEATURES
STB710X FAMILY
•
OPERATING FREQUENCY 100-2500MHz
•
EXCELLENT ISOLATION
•
LOW CURRENT CONSUMPTION
•
ULTRA MINIATURE SOT323-6L PACKAGE
(1.15 x 1.8 x 0.8 mm)
SOT323-6L (SC70)
STB7102
•
HIGH ISOLATION (45 dB @ 950 MHz)
STB7103
•
HIGH LINEARITY (P1 dB OUTPUT = +1.5 dBm)
STB7104
•
LOW CURRENT CONSUMPTION (2.8 mA)
ORDERING INFORMATION
P/N
STB7102
STB7103
STB7104
ORDER CODE
STB7102TR
TBD
TBD
MARKING
102
103
104
DESCRIPTION
The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an
high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar
process, they offers an excellent isolation and a good linearity using a low current consumption. These
low current amplifiers operate on 3.0 V. The STB710x family is housed in an ultra miniature package
SOT323-6L surface mount package. SOT323-6L dimensions are 1.15mmx1.8mm with 0.8 mm
thickness.
APPLICATION
UHF BUFFER AMPLIFIER for Mobile Phone Application (0.1/2.5GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
cc
T
stg
T
a
Parameter
Supply voltage
Storage temperature
Operating ambient temperature
Conditions
Value
3.3
-40 to +100
-30 to +85
Unit
V
o
C
o
C
June, 17 2002
1/10
STB7102, STB7103, STB7104
PIN CONNECTION
Pin No.
Pin Name
INPUT
GND
GND
OUTPUT
GND
VCC
(Top View)
3
2
1
4
5
6
(Bottom View)
4
5
6
3
2
1
1
2
3
4
5
6
PRODUCT LINE-UP
Part Number
STB7102
STB7103
STB7104
Icc (mA)
Gp at 1dB
(dB)
4.3
4.1
2.8
15.5
17.5
17
950 MHz output port
matching frequency
ISL
(dB)
45
45
45
P
1dBout
(dBm)
0
1.5
-0.25
Example of a digital cellular phone (Receiver and Transmission section)
Receiver section
SAW
Filter
RF
Mixer
IF
Filter
AGC
IF
Amp
IQ
Demodulator
LNA
I
Duplexer
X
X
Q
ADC
ADC
X
Lo Buffer
Amplifier
IF Buffer
RF PLL
IF PLL
Transmission section
PA
AGC
RF
Filter
RF
Mixer
IF
Amp
IF
Filter
IQ
Modulator
Duplexer
X
X
I
DAC
X
Lo Buffer
Amplifier
IF Buffer
Q
DAC
RF PLL
IF PLL
These ICs can be added to your system around
parts, when you need more isolation or gain.
The application showed above is only an example therefore it can depend on your kit evaluation.
2/10
STB7102, STB7103, STB7104
ELECTRICAL CHARACTERISTICS
(T
a
= +25
o
C, V
cc
= 3V, Z
s
= Z
L
= 50Ω,
unless otherwise specified)
Symbol
I
cc
P1dB
G
P
NF
ISL
RL
in
RL
out
(1)
(2)
Parameters
Circuit Current
Output Power at 1dB
Compression Point
Gain at 1dB
Compression Point
Noise Figure
Isolation
Input Return Loss
Output Return Loss
Test
Conditions
f = 950 MHz
f = 950 MHz
f = 950 MHz
f = 950 MHz
f = 950 MHz
f = 950 MHz
f = 950 MHz
STB7102
(1)
Min
3.3
Typ
4.3
0
15.5
3
45
8
20
Max
5.3
STB7103
(2)
Min
3.3
Typ
4.1
1.5
17.5
2.85
45
10
7
Max
4.9
STB7104
(2)
Min
2.2
Typ
2.8
-0.25
17
3.3
45
7
7
Max
3.4
Unit
mA
dBm
dB
dB
dB
dB
dB
STB7102 data are measured in TEST CIRCUIT showed in page 5
STB7103 and STB7104 data are measured in TEST CIRCUIT showed in page 8
3/10
STB7102, STB7103, STB7104
TYPICAL PERFORMANCE
(STB7102)
Power Gain vs. Frequency
18
Reverse Isolation vs. Frequency
0
16
-1 0
14
Gp (dB)
-2 0
ISL (dB)
12
-3 0
10
-4 0
8
-5 0
6
800
850
900
950
1000
1050
1100
1150
1200
f (MHz )
-6 0
8 00
850
900
9 50
100 0
f (MHz)
1 050
11 00
115 0
1 200
Input Return Loss vs. Frequency
0
Output Return Loss vs. Frequency
0
-5
-1 0
-10
-2 0
IRL (dB)
ORL (dB)
-15
-3 0
-20
-4 0
-25
-30
-5 0
-35
800
850
900
950
1000
f (Mhz )
1050
1100
1150
1200
-6 0
800
850
900
950
1000
f (Mh z)
1 05 0
11 0 0
1150
1200
Noise Figure vs. Frequency
4.5
4
3.5
3
Output Power @ 1dB compression point
18
17
16
Gp (dB)
NF (dB)
2.5
P1dBcp
-0.1 dBm
15
2
1.5
1
0.5
0
80 0
14
13
85 0
90 0
95 0
1 000
f (Mhz)
1 050
1 100
1 150
1200
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
Pout (dBm )
4/10
STB7102, STB7103, STB7104
STB7102 TEST CIRCUIT
1
2
3
4
C8
1.5pF
L2
2n2
J2
RF OUT
3
C1
33pF
2
1
J1
RF IN
GND
GND
INPUT
OUT
GND
VCC
Title
Size
A4
Date:
File:
4
5
6
L3
10nH
JP1
VCC
L4
5n6
L1
33nH
1
2
C5
Number
10nF
C3
33pF
C2
1uF
Revision
17-Jun-2002
Sheet of
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