VS-MBRB735-M3, VS-MBRB745-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 7.5 A
Base
cathode
2
FEATURES
• 150 °C T
J
operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
2
1
3
1
N/C
3
Anode
D
2
PAK (TO-263AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
7 mJ
D
2
PAK (TO-263AB)
Single
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRB7... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
7.5 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
7.5
35, 45
690
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB735-M3
35
VS-MBRB745-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Non-repetitive peak surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
T
C
= 131 °C, rated V
R
5 μs sine or 3 μs rect. pulse
Following any rated load condition
and with rated V
RRM
applied
TEST CONDITIONS
VALUES
7.5
690
150
7
2
mJ
A
A
UNITS
Surge applied at rated load condition halfwave single phase 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 06-Nov-17
Document Number: 96396
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop
V
FM (1)
7.5 A
15 A
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.84
0.57
0.72
0.1
15
400
8.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-65 to 150
-65 to 175
3.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
MBRB735
MBRB745
Revision: 06-Nov-17
Document Number: 96396
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
www.vishay.com
Vishay Semiconductors
100
100
I
R
- Reverse Current (mA)
10
1
0.1
0.01
T
J
= 150 °C
I
F
- Instantaneous
Forward Current (A)
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0001
T
J
= 25 °C
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 06-Nov-17
Document Number: 96396
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
www.vishay.com
150
Vishay Semiconductors
7
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
DC
Allowable Case Temperature (°C)
Average Power Loss (W)
6
5
4
3
2
1
0
140
DC
130
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
120
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 06-Nov-17
Document Number: 96396
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
-
-
-
-
-
-
2
B
3
7
4
45
5
TRL -M3
6
7
Vishay Semiconductors product
Essential part number
B = Surface mount
None = TO-220
Current rating (7 = 7.5 A)
Voltage ratings
None = Tube
TRL = Tape and reel (left oriented - for D
2
PAK only)
TRR = Tape and reel (right oriented - for D
2
PAK only)
35 = 35 V
45 = 45 V
7
-
-M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBRB735-M3
VS-MBRB735TRR-M3
VS-MBRB735TRL-M3
VS-MBRB745-M3
VS-MBRB745TRR-M3
VS-MBRB745TRL-M3
QUANTITY PER T/R
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
www.vishay.com/doc?95298
Revision: 06-Nov-17
Document Number: 96396
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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