VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
“Half Bridge” IGBT MTP (Ultrafast NPT IGBT), 80 A
FEATURES
• Ultrafast non punch through (NPT) technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
Available
Available
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
• Al
2
O
3
DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
MTP
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
1200 V
3.36 V
80 A
8 kHz to 30 kHz
MTP
Half bridge
PRIMARY CHARACTERISTICS
V
CES
V
CE(on)
typical at V
GE
= 15 V
I
C
at T
C
= 25 °C
Speed
Package
Circuit configuration
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation (only IGBT)
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 105 °C
T
C
= 25 °C
T
C
= 104 °C
TEST CONDITIONS
MAX.
1200
80
40
160
160
21
160
± 20
2500
463
185
V
W
A
UNITS
V
Revision: 09-Oct-17
Document Number: 94507
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
V
(BR)CES
V
(BR)CES
/T
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 3 mA (25 °C to 125 °C)
V
GE
= 15 V, I
C
= 40 A
MIN.
1200
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+1.1
3.36
4.53
3.88
5.35
-
-12
35
-
0.4
0.2
-
MAX.
-
-
3.59
4.91
4.10
5.68
6
-
-
250
1.0
10
± 250
mV/°C
S
μA
mA
nA
V
UNITS
V
V/°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter
breakdown voltage
Temperature coefficient of
breakdown voltage
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V, I
C
= 80 A
V
GE
= 15 V, I
C
= 40 A, T
J
= 150 °C
V
GE
= 15 V, I
C
= 80 A, T
J
= 150 °C
V
CE
= V
GE
, I
C
= 500 μA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
CE
= 50 V, I
C
= 40 A, PW = 80 μs
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 25 °C
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C
V
GE
= ± 20 V
Gate threshold voltage
Temperature coefficient of
threshold voltage
Transconductance
Zero gate voltage collector current
Gate to emitter leakage current
V
GE(th)
V
GE(th)
/T
J
g
fe
I
CES
I
GES
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
C
ies
C
oes
C
res
RBSOA
TEST CONDITIONS
I
C
= 40 A
V
CC
= 600 V
V
GE
= 15 V
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5
,
L = 200 μH, T
J
= 25 °C,
energy losses include tail and diode
reverse recovery
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5
,
L = 200 μH, T
J
= 125 °C,
energy losses include tail and diode
reverse recovery
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
T
J
= 150 °C, I
C
= 160 A
V
CC
= 1000 V, V
p
= 1200 V
R
g
= 5
,
V
GE
= + 15 V to 0 V
T
J
= 150 °C,
V
CC
= 900 V, V
p
= 1200 V
R
g
= 5
,
V
GE
= + 15 V to 0 V
10
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
399
43
187
1.14
1.35
2.49
1.60
1.62
3.22
5521
380
171
Fullsquare
MAX.
599
65
281
1.71
2.02
3.73
2.40
2.43
4.82
8282
570
257
pF
mJ
nC
UNITS
Short circuit safe operating area
SCSOA
-
-
μs
DIODE SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
I
C
= 40 A
I
C
= 80 A
Diode forward voltage drop
V
FM
I
C
= 40 A, T
J
= 125 °C
I
C
= 80 A, T
J
= 125 °C
I
C
= 40 A, T
J
= 150 °C
Reverse recovery energy of the diode
Diode reverse recovery time
Peak reverse recovery current
E
rec
t
rr
I
rr
V
GE
= 15 V, R
g
= 5
,
L = 200 μH
V
CC
= 600 V, I
C
= 40 A
T
J
= 125 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
TYP.
2.98
3.90
3.08
4.29
3.12
574
120
43
MAX.
3.38
4.41
3.39
4.72
3.42
861
180
65
μJ
ns
A
V
UNITS
Revision: 09-Oct-17
Document Number: 94507
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
T
Stg
TEST CONDITIONS
MIN.
-40
-40
-
-
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
Shortest distance along external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
-
5.5
8
TYP.
-
-
-
-
0.06
-
-
3 ± 10 %
66
MAX.
150
125
0.29
0.61
-
-
-
mm
°C/W
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case
Case to sink per module
Clearance
(1)
IGBT
Diode
R
thJC
R
thCS
Creepage
(2)
Mounting torque to heatsink
Weight
Nm
g
100
1000
80
100
60
IC (A)
10
IC (A)
10 μs
100 μs
40
1
10ms
DC
20
0.1
0
0
20
40
60
80
100 120 140 160
T C (°C)
0.01
1
10
100
VCE (V)
1000
10000
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
150 °C
600
500
400
1000
100
PD (W)
300
200
100
0
0
20
40
60
80
100 120 140 160
T C (°C)
IC (A)
10
1
10
100
VCE (V)
1000
10 000
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 4 - Reverse BIAS SOA
T
J
= 150 °C; V
GE
= 15 V
Revision: 09-Oct-17
Document Number: 94507
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
120
100
80
-40°C
25°C
125°C
160
VGE = 18V
140
120
100
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
80
60
40
20
0
0
2
4
VCE (V)
6
8
10
60
40
20
0
0.0
1.0
2.0
3.0
VF (V)
4.0
5.0
Fig. 5 - Typical IGBT Output Characteristics
T
J
= - 40 °C; t
p
= 80 μs
160
140
120
100
Fig. 8 - Typical Diode Forward Characteristics
t
p
= 80 μs
20
18
16
14
V CE (V)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE = 80A
ICE = 40A
ICE = 20A
ICE (A)
12
10
8
6
80
60
40
20
0
0
2
4
6
VCE (V)
8
10
4
2
0
5
10
V GE (V)
15
20
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 80 μs
160
VGE = 18V
140
120
100
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40 °C
20
18
16
14
ICE = 80A
ICE = 40A
ICE = 20A
V CE (V)
0
2
4
VCE (V)
6
8
10
ICE (A)
12
10
8
6
4
80
60
40
20
0
2
0
5
10
V GE (V)
15
20
Fig. 7 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 80 μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Revision: 09-Oct-17
Document Number: 94507
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
1000
ICE = 80A
ICE = 40A
ICE = 20A
tdOFF
20
18
16
14
V CE (V)
12
10
8
6
4
2
0
5
10
V GE (V)
15
20
Swiching Time (ns)
100
tR
tdON
tF
10
0
20
40
IC (A)
60
80
100
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 125 °C
6000
T J = 25°C
T J = 125°C
250
Fig. 14 - Typical Switching Time vs. I
C
T
J
= 125 °C; L = 250 μH; V
CE
= 400 V
R
g
= 5
;
V
GE
= 15 V
350
300
5000
EON
EOFF
Energy (μJ)
ICE (A)
200
150
100
4000
3000
2000
50
0
0
5
10
VGE (V)
15
20
1000
0
10
20
30
Rg ( Ω)
40
50
60
Fig. 12 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
4800
4200
3600
10 000
Fig. 15 - Typical Energy Loss vs. R
g
T
J
= 150 °C; L = 250 μH; V
CE
= 600 V
I
CE
= 40 A; V
GE
= 15 V
Swiching Time (ns)
tdOFF
1000
Energy (μJ)
3000
2400
1800
1200
600
0
0
20
40
IC (A)
60
80
100
EON
100
tdON
tR
tF
EOFF
10
0
10
20
30
Rg (Ω)
40
50
60
Fig. 13 - Typical Energy Loss vs. I
C
T
J
= 125 °C; L = 250 μH; V
CE
= 400 V
R
g
= 5
;
V
GE
= 15 V
Fig. 16 - Typical Switching Time vs. R
g
T
J
= 150 °C; L = 250 μH; V
CE
= 600 V
I
CE
= 40 A; V
GE
= 15 V
Revision: 09-Oct-17
Document Number: 94507
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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