PD - 97222
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for improved panel efficiency
l
High repetitive peak current capability
l
Lead Free package
IRGP4055DPbF
Key Parameters
300
1.70
270
150
V
V
A
°C
V
CE
min
V
CE(ON)
typ. @ 110A
I
RP
max @ T
C
= 25°C
c
T
J
max
C
C
G
E
C
G
E
n-channel
G
Gate
C
Collector
TO-247AC
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
Typ.
–––
1.45
0.20
–––
2.0 (0.07)
Max.
0.48
2.5
–––
70
–––
N
Units
°C/W
Max.
±30
110
60
270
255
102
2.04
-40 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
d
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
g (oz)
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1
06/14/06
IRGP4055DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
BV
CES
∆ΒV
CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
I
CES
I
GES
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Parameter
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Collector-to-Emitter Voltage
Min.
300
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
—
—
—
—
—
—
—
—
100
–––
–––
C
iss
C
oss
C
rss
L
C
L
E
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
Typ.
–––
0.23
1.10
1.70
2.35
1.95
–––
-11
2.0
100
–––
–––
38
132
42
44
39
245
152
42
40
362
309
–––
705
915
4280
200
125
5.0
13
Max.
–––
–––
1.30
2.10
–––
–––
5.0
–––
25
–––
100
-100
–––
–––
–––
57
55
308
198
—
—
—
—
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
Units
V
GE
= 0V, I
CE
= 1 mA
V
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 35A
V
GE
= 15V, I
CE
= 110A
V
V
GE
= 15V, I
CE
= 200A
V
GE
= 15V, I
CE
= 110A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 1mA
V
e
e
e
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
mV/°C
µA V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
nA V
GE
= 30V
V
GE
= -30V
V
CE
= 25V, I
CE
= 35A
S
nC V
CE
= 200V, I
C
= 35A, V
GE
= 15V
I
C
= 35A, V
CC
= 180V
R
G
= 10Ω, L=250µH, L
S
= 150nH
T
J
= 25°C
I
C
= 35A, V
CC
= 180V
R
G
= 10Ω, L=250µH, L
S
= 150nH
T
J
= 150°C
e
ns
ns
ns
µJ
pF
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.40µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.40µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
V
GE
= 0V
V
CE
= 30V
ƒ = 1.0MHz,
See Fig.13
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
I
F(AV)
I
FSM
V
F
t
rr
Parameter
Average Forward Current
Non Repetitive Peak Surge Current
Forward Voltage
Diode Reverse Recovery Time
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
1.0
0.83
–––
27
40
30
106
2.2
5.3
Max.
8.0
100
1.25
1.0
35
–––
–––
–––
–––
–––
–––
Conditions
Units
T
c
= 155°C
A
T
J
= 155°C, PW = 6.0ms half sine wave
A
I
F
= 8A
V
I
F
= 8A, T
J
= 125°C
ns
I
F
= 1.0A, di/dt = -50A/µs, V
R
= 30V
T
J
= 25°C I
F
= 8.0A, V
R
= 200V,
T
J
= 125°C di/dt = 200A/µs
T
J
= 25°C I
F
= 8.0A, V
R
= 200V,
T
J
= 125°C di/dt = 200A/µs
T
J
= 25°C I
F
= 8.0A, V
R
= 200V,
T
J
= 125°C di/dt = 200A/µs
Q
rr
I
rr
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
nC
A
Notes:
Half sine wave with duty cycle = 0.25, ton=1µsec.
R
θ
is measured at
T
J
of approximately 90°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRGP4055DPbF
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
Fig 1. Typical Output Characteristics @ 25°C
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
Fig 2. Typical Output Characteristics @ 75°C
200
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
V
= 6.0V
GE
150
Bottom
150
Bottom
ICE (A)
ICE (A)
100
100
50
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
Fig 3. Typical Output Characteristics @ 125°C
300
IC, Collector-to-Emitter Current (A)
Fig 4. Typical Output Characteristics @ 150°C
20
T J = 25°C
250
200
150
100
5
IC = 35A
T J = 150°C
V CE (V)
15
TJ = 25°C
TJ = 150°C
10
50
10µs PULSE WIDTH
0
0
5
10
15
VGE, Gate-to-Emitter Voltage (V)
0
5
10
V GE (V)
15
20
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
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IRGP4055DPbF
120
100
IC, Collector Current (A)
300
280
Limited By Package
Repetitive Peak Current (A)
260
240
220
200
180
160
140
120
100
80
60
40
20
0
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
80
60
40
20
0
0
25
50
75
100
125
150
TC , Case Temperature (°C)
25
50
75
100
125
150
Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
1000
900
Energy per Pulse (µJ)
Fig 8. Typical Repetitive Peak Current vs. Case
Temperature
1000
L = 220nH
C = 0.4µF
V CC = 240V
L = 220nH
C = variable
Energy per Pulse (µJ)
900
800
700
800
700
600
25°C
500
400
300
160
170
180
190
200
210
220
230
100°C
100°C
600
500
25°C
400
300
200
150 160 170 180 190 200 210 220 230 240
V CE, Collector-to-Emitter Voltage (V)
Ic , Peak Collector Current (A)
Fig 9. Typical E
PULSE
vs. Collector Current
1200
V CC = 240V
1000
Energy Pulse (µJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
1000
OPERATION IN THIS AREA
LIMITED BY V CE(on)
L = 220nH
t = 1µs half sine
C= 0.4µF
100
800
C= 0.3µF
600
C= 0.2µF
400
1µsec
10µsec
IC (A)
100µsec
10
200
25
50
75
100
125
150
TJ, Temperature (ºC)
1
1
10
VCE (V)
100
1000
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRGP4055DPbF
100000
C oes = C ce + C gc
V GE, Gate-to-Emitter Voltage (V)
VGS = 0V,
f = 1 MHZ
C ies = C ge + C gd, C ce SHORTED
C res = C gc
16
14
12
10
8
6
4
2
0
IC = 30A
IC = 35A
10000
Capacitance (pF)
Cies
1000
100
Coes
Cres
10
0
50
100
150
200
0
25
50
75
100
125
150
V CE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
1
D = 0.50
Thermal Response ( Z thJC )
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
P
DM
t1
t2
0.1
.
.
0.01
0.00001
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (Seconds)
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Diode)
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