ETSC – Embedded & Wirebond
Temperature Silicon Capacitor
Rev 3.6
Key features
High Operating temperature ( 200°C)
Low profile (250µm)
High stability of capacitance value:
Temperature
±1%
(-55°C to +200°C)
Voltage <0.1%/Volts
Negligible capacitance loss through ageing
Low leakage current down to 100pA
High reliability
Pad finishing : Aluminum
Thanks to the unique IPDiA Silicon capacitor
technology, most of the problems encountered in
demanding applications can be solved.
Embedded Temperature Silicon Capacitors
are
dedicated to applications where
reliability
up to
200°C
is the main parameter.
ETSC are the most appropriate solution for Chip
On Board, Chip On Foil, Chip On Glass, Chip On
Ceramic, flip chip and embedded applications.
This technology features a capacitor integration
Key applications
All applications up to 200°C, such as
defense, downhole and automotive
industries
High reliability applications
Replacement of X7R and C0G dielectrics
Decoupling / Filtering / Charge pump
(i.e.: motor management, temperature
sensors)
Downsizing
ETSC provides the highest capacitor
stability
over
the full -55°C/+200°C temperature range in the
market with a
TC<1%.
The IPDiA technology offers industry leading
performances relative to
Failure rate
with a
FIT<0,017.
This technology also offers
high reliability,
up to
10
times
better
than
alternative
capacitor
technologies, such as Tantalum or MLCC, and
eliminates cracking phenomena.
This Silicon based technology is ROHS compliant
and compatible with lead free reflow soldering
process.
.
capability
(up
to
250nF/mm )
²
which
offers
capacitance value similar to X7R dielectric, but
with better electrical performances than C0G/NP0
dielectrics, up
to 200°C.
ETSC
Electrical specification
Capacitance value
10
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1nF/0202/30V
0.1nF
935 124 72C 410
10nF/0202/30V
1nF
935 124 72C 510
100nF/0404/11V
935 124 42F 610
10nF
100nF/0605/30V
935 124 72G 610
1µF/1208/11V
935 124 42S 710
0.1µF
1µF/1616/30V
935 124 72Y 710
15
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22
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33
39
47
68
10pF
Contact
390pF/0202/30V 470pF/0202/30V 680pF/0202/30V
IPDIA Sales
935 124 72C 339 935 124 72C 347 935 124 72C 368
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33nF/0404/30V
Contact
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935 124 72F 533
IPDIA Sales
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220nF/0505/11V
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935 124 42H 622
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Parameters
Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperatures
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
Equivalent Serial Inductor (ESL)
Equivalent Serial Resistor (ESR)
Insulation resistance
Aging
Reliability
Capacitor height
Value
390pF to 4.7µF
(*)
±15%
(*)
-55 to 200 °C
(**)
- 70 to 215 °C
±1%, from -55 to +200°C
30, 11V
0.1 % /V (from 0 V to RVDC)
Max 100 pH
Max 0.1
50G
min @ RVDC,25°C
20G
min @ RVDC,200°C
Negligible, < 0.001% / 10000h
FIT<0.017 parts / billions hours
Max 250µm
(*)
Unit
Contact
IPDIA Sales
2.2µF/1612/11V 3.3µF/1616/11V
935 124 42V 722 935 124 42Y 733
4.7µF/2016/11V
935 124 42X 747
(*) Other values on request
Temperature coefficient
20
10
0
Capacitance change (%)
Capacitance change (%)
PICS vs.
(**) For extended
MLCC capacitors
range (up to +250°C), see Embedded Xtreme Temperature Silicon Capacitor product (EXSC).
temperature
Temperature
Temperature coefficient
coefficient
PICS vs. MLCC
PICS vs. MLCC capacitors
capacitors
PICS
C0G
X8R
X7R
0
10
DC Voltage stability
MLCC capacitors vs. PICS
1,1
20
10
0
Capacitance change (%)
20
-10
10
-20
0
-30
-40
-10
-50
-20
Z5U
C0G
X8R
X7R
ESL (nH) @25°C
COG(NPO)vs.
vs. PICS
0402 C0G(NPO)
PICS
PICS
1
PICS
PICS
-10
Capacitance change (%)
C0G
X8R
X7R
-20
-30
C0G
0,9
0,8
0,7
C0G
-10
-20
-30
-40
-50
-60
-70
-80
-50
ESL(nH)
X7R
-40
-50
-60
-70
-80
Y5V
-30
-60
-40
-70
-50
-80
-50
0
50
Z5U
Y5V
0,6
0,5
0,4
0,3
0,2
Z5U
100
150
200
-60
-70
Temperature (°C)
Y5V
Y5V
PICS
0,1
0
-90
-80
-50
0
0
50
50
100
100
150
150
200
200
-100
0
1
2
3
Bias voltage (V)
4
5
6
7
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950 1000
Temperature (°C)
Temperature (°C)
Capacitance (pF)
Fig.1 Capacitance change versus temperature
variation compared to alternative technologies
Part Number
935.124.
Fig.2 Capacitance change versus voltage
variation compared to alternative
technologies
Fig.3 ESL versus capacitance value
compared to alternative technologies
B.2.
Breakdown
Voltage
4 = 11V
1= 20V
7= 30V
6= 50V
52=90V
4 = 0.1n
S.
Size
F = 0404
H = 0505
I = 0302
S =1208
V =1216
U
Unit
0 = 10 f
1 = 0.1 p
2=1p
3 = 10 p
4 = 0.1 n
xx
Value
10
15
22
33
39
47
68
i.e: 100nF/0404
935 124 42F 610
Termination
G= 0605
C = 0202
V = 1612
Y = 1616
X =2016
5=1n
6 = 10 n
7 = 0.1 µ
8=1µ
9 = 10 µ
Pad finishing in Aluminum (3µm thickness +/-10%)
Applicable for almost all embedded applications.
Parts should be glued with non conductive paste. If conductive glue is used on the backside of the silicon
cap, it is strongly recommended to connect the backside and pads 3&4 to the same level (GND preferred).
Pinning definition & Outline
pin #
1, 2
3, 4
Symbol
Signal
GND
Description
Signal
Ground
Typ.
A
0202
0.58
±0.05
0.58
±0.05
0,15
0,3
0,3
0302
0.80
±0.05
0.64
±0.05
0,15
0,52
0,36
0303
0.80
±0.05
0.80
±0.05
0,15
0,52
0,52
0404
1.00
±0.05
1.00
±0.05
0,15
0,72
0,72
0505
1.25
±0.05
1.25
±0.05
0,15
0,97
0,97
0605
1.50
±0.05
1.25
±0.05
0,15
1,22
1,22
1208
3.00
±0.05
2.00
±0.05
0,15
2,72
1,72
1612
4.00
±0.05
3.00
±0.05
0,15
3,72
2,72
1616
4.00
±0.05
4.00
±0.05
0,15
3,72
3,72
2016
5.00
±0.05
4.00
±0.05
0,15
4,72
3,72
Comp.
size
B
c
d
e
Packaging
Tape and reel, tray, waffle pack or wafer delivery.
Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner. The information
presented in this document does not form part of any
quotation or contract, is believed to be accurate and reliable
and may be changed without notice. No liability will be
accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
For more information, please visit:
http://www.ipdia.com
To contact us, email to:
sales@ipdia.com
Date of release: 28 February 2014
Document identifier : CL xxxxxxxxx
th
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