2017-02-21
OSLON Black Flat (IR broad band emitter) - 120°
Version 1.1
SFH 4735
Features:
•
SMD epoxy package
•
ThinGaN (UX:3)
•
Wide viewing angle of 120°
•
Improved Corrosion Robustness
•
Low thermal resistance (Max. 9 K/W)
Applications
•
Illumination source for spectroscopy
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type:
Total Radiant Flux
Φ
e
[mW]
I
F
= 350 mA, t
p
= 20 ms
SFH 4735
Note:
Ordering Code
200
Measured with integrating sphere.
Q65111A9885
2017-02-21
1
Version 1.1
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operation and storage temperature range
Junction temperature
Forward current
Surge current
(t
p
≤ 1 ms, D = 0)
Power consumption
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance junction - soldering point
Note:
SFH 4735
Symbol
T
op
; T
stg
T
j
I
F
I
FSM
P
tot
V
ESD
R
thJS
Values
-40 ... 85
125
500
1
1900
2
9
Unit
°C
°C
mA
A
mW
kV
K/W
For the forward current and power consumption please see "maximum permissible forward current" diagram
Characteristics
(T
A
= 25 °C)
Parameter
Half angle
Forward voltage
(I
F
= 350 mA, t
p
= 20 ms)
Forward voltage
(I
F
= 500 mA, t
p
= 100 µs)
Reverse current
(V
R
= 5 V)
Radiant intensity
(I
F
= 350 mA, t
p
=20 ms, λ = 350 - 600nm)
Radiant intensity
(I
F
= 350 mA, t
p
=20 ms, λ = 600 - 1050nm)
Total radiant flux
(I
F
= 350 mA, t
p
=20 ms, λ = 350 - 600nm)
Total radiant flux
(I
F
= 350 mA, t
p
=20 ms, λ = 600 - 1050nm)
Spectral flux
(I
F
= 350 mA, t
p
= 20 ms, λ = 750 nm)
Spectral flux
(I
F
= 350 mA, t
p
= 20 ms, λ = 850 nm)
Spectral flux
(I
F
= 350 mA, t
p
= 20 ms, λ = 950 nm)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
ϕ
(typ (max)) V
F
(typ (max)) V
F
I
R
I
e, typ
I
e, typ
Φ
e
Φ
e
Φ
e, λ
Φ
e, λ
Φ
e, λ
Values
± 60
2.95 (≤ 3.5)
3 (≤ 3.8)
not designed for
reverse operation
59
5
184
16
60
45
45
Unit
°
V
V
µA
mW/sr
mW/sr
mW
mW
µW/nm
µW/nm
µW/nm
2017-02-21
2
Version 1.1
Relative Spectral Emission
1)
page 12
I
rel
= f (λ), T
A
= 25 °C, I
F
= 350 mA, t
p
= 10 ms
SFH 4735
Relative Total Radiant Flux
1)
page 12
Φ
e
/Φ
e
(350mA) = f (I
F
), T
A
= 25 °C, Single pulse,
t
p
= 100 μs
Max. Permissible Forward Current
I
F
= f (T
S
), R
thJS
= 9 K/W
[ ]
600
5 37 4 HF S
Forward Current
1)
page 12
I
F
= f(V
F
), single pulse, t
p
= 100 µs, T
A
= 25°C
2017-02-21
C°
A
T
A
F
I
400
200
0
0
20
40
60
80
100
[ ]
3
Version 1.1
SFH 4735
Permissible Pulse Handling Capability
I
F
= f(t
p
), T
A
= 85 °C, duty cycle D = parameter
[ ]
A
1,0
0,8
0,6
0,4
0,2
0,0
-5
10 10
-4
10
-3
0,01 0,1
Radiation Characteristics
1)
page 12
I
rel
= f(ϕ), T
A
= 25°C
40˚
30˚
20˚
10˚
0˚
OHL01660
50˚
60˚
0.4
70˚
0.2
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
0
2017-02-21
s
p
t
5 37 4 HF S
F
I
:D=1
: D = 0,5
: D =0,2
: D =0,1
: D =0,05
: D =0,02
: D =0,01
: D =0,005
1
10 100
[ ]
ϕ
1.0
0.8
0.6
4
Version 1.1
SFH 4735
Package Outline
Dimensions in mm.
Type:
SFH 4735
Package
OSLON Black Flat
Approximate Weight:
0.2 g
Package marking
see drawing
Note:
IRED is protected by ESD device which is connected in parallel to chip.
2017-02-21
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
