2015-12-23
GaAlAs Light Emitting Diode (660 nm)
Version 1.3
SFH 4860
Features:
•
Fabricated in a liquid phase epitaxy process
•
Cathode is electrically connected to the case
•
High reliability
•
Spectral match with silicon photodetectors
•
Hermetically sealed package
Applications
•
Photointerrupters
•
IR remote control
•
Sensor technology
•
Light curtains
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type:
Radiant Intensity
I
e
[mW/sr]
I
F
= 50 mA, t
p
= 20 ms
SFH 4860
Note:
Ordering Code
1.3 (≥ 0.63)
Q62702P5053
18 A3 DIN 870 (TO-18), flat glass cap, lead spacing 2.54 mm (1/10’’) anode making: projection at package
bottom
2015-12-23
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operation and storage temperature range
Junction temperature
Reverse voltage
Forward current
Surge current
(t
p
≤ 10 µs, D = 0)
Power consumption
Thermal resistance junction - ambient
Thermal resistance junction - case
Characteristics
(T
A
= 25 °C)
Parameter
Peak wavelength
(I
F
= 50 mA, t
P
= 20 ms)
Spectral bandwidth at 50% of I
max
(I
F
= 50 mA, t
p
= 20 ms)
Half angle
Dimensions of active chip area
Rise and fall time of I
e
( 10% and 90% of I
e max
)
(I
F
= 50 mA, R
L
= 50 Ω)
Capacitance
(V
R
= 0 V, f = 1 MHz)
Forward voltage
(I
F
= 50 mA, t
P
= 20 ms)
Reverse current
(V
R
= 3 V)
Total radiant flux
(I
F
=50 mA, t
p
=20 ms)
Temperature coefficient of I
e
or Φ
e
(I
F
= 50 mA, t
p
= 20 ms)
Temperature coefficient of V
F
(I
F
= 50 mA, t
p
= 20 ms)
Temperature coefficient of wavelength
(I
F
= 50 mA, t
p
= 20 ms)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
λ
peak
∆λ
ϕ
LxW
t
r
, t
f
C
0
Values
660
25
± 50
Symbol
T
op
; T
stg
T
j
V
R
I
F
I
FSM
P
tot
R
thJA
R
thJC
Values
-40 ... 100
125
3
50
1
140
450
160
SFH 4860
Unit
°C
°C
V
mA
A
mW
K/W
K/W
Unit
nm
nm
°
mm x
mm
ns
pF
V
µA
mW
%/K
mV / K
nm / K
0.325 x 0.325
100
25
2 (≤ 2.8)
0.01 (≤ 10)
3
-0.4
-3
0.16
(typ (max)) V
F
I
R
Φ
e
TC
I
TC
V
TC
λ
2015-12-23
2
Version 1.3
Grouping
(T
A
= 25 °C)
Group
Min Radiant Intensity
I
F
= 50 mA, t
p
= 20 ms
I
e, min
[mW / sr]
SFH 4860
Note:
SFH 4860
Typ Radiant Intensity
I
F
= 1 A, t
p
= 100 µs
I
e, typ
[mW / sr]
15
0.63
measured at a solid angle of Ω = 0.01 sr
Relative Spectral Emission
1)
page 8
I
rel
= f(λ), T
A
= 25°C
100
OHR01869
Radiant Intensity
1)
page 8
I
e
/ I
e
(50mA) = f(I
F
), single pulse, t
p
= 20 µs, T
A
=
25°C
10
2
Ι
e
Ι
e 50 mA
10
1
OHR01870
Ι
rel
%
80
60
10
0
40
20
10
-1
0
600
650
700
nm
λ
750
10
-2
10
0
10
1
10
2
mA
Ι
F
10
3
2015-12-23
3
Version 1.3
SFH 4860
Max. Permissible Forward Current
I
F, max
= f(T
C
), R
thJC
= 160 K / W
120
OHR00390
Max. Permissible Forward Current
I
F, max
= f(T
A
), R
thJA
= 450 K / W
120
OHR00391
Ι
F
mA
100
Ι
F
mA
100
80
80
60
60
40
40
20
20
0
0
20
40
60
80
100
˚C
130
T
A
0
0
20
40
60
80
100
˚C
130
T
A
Forward Current
1)
page 8
I
F
= f(V
F
), single pulse, t
p
= 100 µs, T
A
= 25°C
10
3
Ι
F
mA
OHR01871
Permissible Pulse Handling Capability
I
F
= f(t
p
), T
A
= 25 °C, duty cycle D = parameter
Ι
F
10
4
mA
D
=
OHR01872
t
P
t
P
T
D=
0.005
0.01
0.02
0.05
Ι
F
T
10
2
10
3
0.1
0.2
10
1
10
2
0.5
DC
10
0
0
1
2
3
4
5
6 V 7
V
F
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
s
t
P
10
1
2015-12-23
4
Version 1.3
Radiation Characteristics
1)
page 8
I
rel
= f(ϕ), T
A
= 25°C
40
30
20
10
0
1.0
SFH 4860
OHR00389
ϕ
50
0.8
60
0.6
70
0.4
80
90
0.2
0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Package Outline
Chip position
2.54 mm
spacing
ø0.45
14.5
12.5
(2.7)
1.1 .9
0
1
0.9 .1
5.5
5.2
GMO06983
Cathode
4.05
3.45
ø4.8
ø4.6
Flat glass cap
ø2.54
Dimensions in mm (inch).
2015-12-23
5
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