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HN2A01FE-Y(TE85L,F

产品描述TRANS 2PNP 50V 0.15A ES6
产品类别半导体    分立半导体   
文件大小236KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

HN2A01FE-Y(TE85L,F概述

TRANS 2PNP 50V 0.15A ES6

HN2A01FE-Y(TE85L,F规格参数

参数名称属性值
晶体管类型2 PNP(双)
电流 - 集电极(Ic)(最大值)150mA
电压 - 集射极击穿(最大值)50V
不同 Ib,Ic 时的 Vce 饱和值(最大值)300mV @ 10mA,100mA
电流 - 集电极截止(最大值)100nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)120 @ 2mA,6V
功率 - 最大值100mW
频率 - 跃迁80MHz
工作温度150°C(TJ)
安装类型表面贴装
封装/外壳SOT-563,SOT-666
供应商器件封装ES6

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HN2A01FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A01FE
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current
High h
FE
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1mA)
/ (I
C
=
−2mA)
= 0.95 (typ.)
: V
CEO
=
−50V,
I
C
=
−150mA
(max)
: h
FE
= 120 to 400
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−150
−30
100
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
1.EMITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
JEDEC
JEITA
TOSHIBA
2-2N1A
Weight: 3.0mg (typ.)
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MH
z
Min
120
80
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
Unit
μA
μA
V
MH
z
pF
Note: h
FE
classification
Y(Y): 120 to 240, GR(G): 200 to 400 ( ) marking symbol
Marking
6
5
4
Type Name
hFE Rank
Equivalent Circuit
(Top View)
M1Y
Start of commercial production
1
2
3
2000-06
1
2014-03-01

HN2A01FE-Y(TE85L,F相似产品对比

HN2A01FE-Y(TE85L,F HN2A01FE-GR(TE85LF
描述 TRANS 2PNP 50V 0.15A ES6 TRANS 2PNP 50V 0.15A ES6
晶体管类型 2 PNP(双) 2 PNP(双)
电流 - 集电极(Ic)(最大值) 150mA 150mA
电压 - 集射极击穿(最大值) 50V 50V
不同 Ib,Ic 时的 Vce 饱和值(最大值) 300mV @ 10mA,100mA 300mV @ 10mA,100mA
电流 - 集电极截止(最大值) 100nA(ICBO) 100nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值) 120 @ 2mA,6V 200 @ 2mA,6V
功率 - 最大值 100mW 100mW
频率 - 跃迁 80MHz 800MHz
工作温度 150°C(TJ) 150°C(TJ)
安装类型 表面贴装 表面贴装
封装/外壳 SOT-563,SOT-666 SOT-563,SOT-666
供应商器件封装 ES6 ES6

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