Datasheet> 器件分类 > 分立半导体> 晶体管> RN1103ACT(TPL3)

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RN1103ACT(TPL3): 产品描述TRANS PREBIAS NPN 0.1W CST3; 产品类别分立半导体晶体管; 文件大小562KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1103ACT(TPL3)概述

TRANS PREBIAS NPN 0.1W CST3

RN1103ACT(TPL3)规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.08 A
最小直流电流增益 (hFE)	70
元件数量	1
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON

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RN1101∼RN1106

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1101, RN1102, RN1103

RN1104, RN1105, RN1106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduced number of parts and simplified manufacturing process

Complementary to RN2101 to RN2106

Unit: mm

Equivalent Circuit and Bias Resister Values

Type No.

RN1101

RN1102

RN1103

RN1104

RN1105

RN1106

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ).

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1101 to 1106

RN1101 to 1104

RN1105, 1106

Symbol

CBO

CEO

EBO

stg

Rating

100

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1990-12

2014-03-01

RN1103ACT(TPL3)相似产品对比

	RN1103ACT(TPL3)	RN1103,LF(CT	RN1101CT(TPL3)	RN1102ACT(TPL3)	RN1101,LF(CT	RN1104T5LFT	RN1102T5LFT
描述	TRANS PREBIAS NPN 0.1W CST3	TRANS PREBIAS NPN 0.1W SSM	TRANS PREBIAS NPN 0.05W CST3	TRANS PREBIAS NPN 0.1W CST3	TRANS PREBIAS NPN 0.1W SSM	TRANS PREBIAS NPN 0.1W SSM	TRANS PREBIAS NPN 0.1W SSM
晶体管类型	-	NPN - 预偏压	-	-	NPN - 预偏压	NPN - 预偏压	NPN - 预偏压
电流 - 集电极（Ic）（最大值）	-	100mA	-	-	100mA	100mA	100mA
电压 - 集射极击穿（最大值）	-	50V	-	-	50V	50V	50V
电阻器 - 基底（R1）	-	22 kOhms	-	-	4.7 kOhms	47 kOhms	10 kOhms
电阻器 - 发射极基底（R2）	-	22 kOhms	-	-	4.7 kOhms	47 kOhms	10 kOhms
不同 Ic，Vce 时的 DC 电流增益（hFE）（最小值）	-	70 @ 10mA，5V	-	-	30 @ 10mA，5V	80 @ 10mA，5V	50 @ 10mA，5V
不同 Ib，Ic 时的 Vce 饱和值（最大值）	-	300mV @ 250µA，5mA	-	-	300mV @ 250µA，5mA	300mV @ 250µA，5mA	300mV @ 250µA，5mA
电流 - 集电极截止（最大值）	-	500nA	-	-	500nA	500nA	500nA
频率 - 跃迁	-	250MHz	-	-	250MHz	250MHz	250MHz
功率 - 最大值	-	100mW	-	-	100mW	100mW	100mW
安装类型	-	表面贴装	-	-	表面贴装	表面贴装	表面贴装
封装/外壳	-	SC-75，SOT-416	-	-	SC-75，SOT-416	SC-75，SOT-416	SC-75，SOT-416
供应商器件封装	-	SSM	-	-	SSM	SSM	SSM

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