VS-300MT...C Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge, 300 A
(Power Modules)
FEATURES
• Blocking voltage up to 1800 V
• High surge capability
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 3600 V
RMS
isolating voltage
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MTC
PRIMARY CHARACTERISTICS
I
O
V
RRM
Package
Circuit configuration
300 A at 100 °C
1600 V to 1800 V
MTC
Three phase bridge
DESCRIPTION
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O (1)
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
T
J
Range
Range
Range
CHARACTERISTICS
VALUES
258
T
C
50 Hz
60 Hz
50 Hz
60 Hz
110
2400
2512
28 795
26 285
287 955
1600 to 1800
-40 to +125
-40 to +150
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
°C
Note
(1)
Maximum output current must be limited to 250 A to do not exceed the maximum temperature of terminals
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
160
180
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
1800
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
1900
I
RRM
MAXIMUM
AT T
J
= MAXIMUM
mA
12
VS-300MT...C
Revision: 03-Mar-18
Document Number: 95682
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300MT...C Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
SYMBOL
I
O
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms
Maximum peak, one-cycle
forward, non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
RMS isolation voltage
I
2
t
V
FT(TO)1
V
FT(TO)2
r
f1
r
f2
V
FM
V
ISOL
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
300
100
2400
2512
2018
Initial
T
J
= T
J
maximum
2113
28 795
26 285
20 360
18 590
287 955
0.79
0.96
3.36
3.22
1.54
1.7
3600
V
m
A
2
s
V
A
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
I
pk
= 240 A, T
J
= 25 °C, per junction
I
pk
= 300 A, T
J
= 25 °C, per junction
T
J
= 25 °C, all terminal shorted
f = 50 Hz, t = 1 s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
Maximum storage temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heat sink
Mounting
torque ± 15 %
to heat sink
to terminal
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation per module
DC operation per junction
Per module
Mounting surface smooth, flat, and greased
A mounting compound is recommended and the torque should be
rechecked after a period of 3 hours to allow for the spread of the
compound. Lubricated threads.
TEST CONDITIONS
VALUES
-40 to +150
-40 to +125
0.038
0.23
0.03
5
5
235
Nm
g
°C/W
UNITS
°C
Approximate weight
R
CONDUCTION PER JUNCTION
DEVICES
VS-300MT...C Series
SINE HALF WAVE CONDUCTION
180°
0.044
120°
0.050
90°
0.061
60°
0.087
30°
0.143
RECTANGULAR WAVE CONDUCTION
180°
0.029
120°
0.050
90°
0.066
60°
0.091
30°
0.145
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 03-Mar-18
Document Number: 95682
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300MT...C Series
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
1000
Maximum Allowable Case Temperature
(°C)
150
140
130
120
110
100
90
80
70
60
50
0
50 100 150 200 250 300 350 400 450 500
120 °C
(Rect.)
100
T
J
= 150 °C
10
T
J
= 25 °C
Per Junction
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Total Output Current (A)
Fig. 1 - Current Rating Characteristics
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Total Power Loss (W)
900
800
700
600
500
400
300
200
100
0
0
50
100
150
200
250
900
Maximum Total Power Loss (W)
T
J
= 150 °C
800
700
600
R
thSA
= 0.1 °C/W
120 °
(Rect.)
0.15 °C/W
500
0.2 °C/W
400
300
200
100
0
0
0.25 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
0.9 °C/W
1.1 °C/W
2.0 °C/W
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
Peak Half
Sine
Wave Forward Current (A)
2200
2000
1800
1600
1400
1200
1000
800
Peak Half
Sine
Wave Forward Current (A)
At any rated load condition and
with rated V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
2500
2300
2100
1900
1700
1500
1300
1100
900
700
Per Junction
500
0.01
Maximum non-repetitive surge
current vs. pulse drain duration.
Initial T
J
= 150 °C
No voltage reapplied
rated V
RRM
reapplied
Per Junction
600
1
10
100
0.1
1
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 03-Mar-18
Document Number: 95682
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300MT...C Series
www.vishay.com
Vishay Semiconductors
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Steady state
value
R
th JC
= 0.23 °C/W
per junction
(DC operating)
0.001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 6 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
30
2
0
3
MT
4
160
5
C
Vishay Semiconductors product
Current rating code: 30 = 300 A (average)
Circuit configuration (three phase diodes bridge)
Package indicator
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
CIRCUIT CONFIGURATION
+
~
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96003
Revision: 03-Mar-18
Document Number: 95682
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
MTC
DIMENSIONS
in millimeters
5-M6
Screwing
depth
max. 10
3
52
13
Ø
6
.5
6.5
54
27
+
-
25
65
72
80
94
Revision: 03-Jun-16
Document Number: 96003
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
30
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