The Half-Bridge Gate-Drive Power Supply Reference Design (RD) consists of a half-bridge
suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power
supplies for the low-side and the high-side switching transistors. It is suitable for
single gate/drive supply voltages as low as +4V as well as dual gate drive supply voltages as
high as +20V / -5V (30V max) with no maximum duty cycle limitations.
Two R12P22005D, R12P21503D, R12P21509D and R12P06S DC/DC modules each are included in
the R-REF01-HB design kit.
NOTE: transistors sold separately.
The signal ground is galvanically isolated from the power ground and can be connected to
any potential, as long as it is less than 2.5kV with respect to the power potential
(high-side and low-side). The limiting element is the gate driver IC specification.
Features:
•
•
•
•
Optimized for very high switching speed
2.5kV continuous input to output isolation
High gate-drive currents (up to 10A source and sink)
The RD is fitted with a SI8273 gate driver, but can be used with any pin-compatible
gate driver with a PWM input (SI8274) or for gate driver ICs with reinforced isolation,
for example the UCC21520 (dual pinout layout on PCB).
Delivered Board
fully populated
This RD can easily be configured for the following topologies (see application suggestions section):
•
LLC half-bridge
•
Asymmetric duty cycle half-bridge (forward and flyback)
•
Active clamp half-bridge (forward and flyback)
•
Full-bridge / phase-shifted full-bridge
•
3-phase B6 bridge
•
NPC B6 bridge (additional driving circuit for NPC is required)
•
Double pulse test
•
Synchronous boost converter
•
Synchronous buck converter
DANGER!
This board is designed to be used with voltages up to 1kV, only qualified
personnel should work with this board. Direct contact with hazardous voltage can
cause injury or death!
Never leave the board operating unattended. After removing the high voltage from
the board, discharge the capacitors with a suitable discharging resistor to avoid elec-
trical shock!
Caution:
This reference design is built with ESD (electrostatic discharge) sensitive
components. Always follow ESD prevention procedures when handling the product
to avoid failures!
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REV.: 0/2017
P-1
R-REF01-HB
Reference Design
Specifications
(measured at Ta= 25°C, 1.5Vin, full load after warm up unless otherwise stated)
BASIC CHARACTERISTICS
Parameter
Input Voltage Con1
Input Voltage Con2 -> Con3
Digital U1, U2, Enable
Logic High Input Threshold
Logic Low Input Threshold
Input Hysteresis
Maximum Ratings
Driver Section
Source and Sink Current (max)
Total Drive Voltage
Propagation Delay
Rise and Fall Times
Isolation
Isolation Voltage
input to output
2.5kVDC
positive and negative
system before gate resistors
+4V
20ns
40ns
10A
30V
70ns
350mV
-0.5V
400mV
5.5V
limited by C10
Condition
Min.
15V
0V
-0.5V
2V
0.8V
Typ.
Max.
42V
1000V
5.5V
refer to the datasheet of the gate-driver IC
Component Placement
T1
T2
R19
High Side Switch
R8
R4
R5
Low Side Switch
CON5
FD2
R20
R26
R17
R18
IC3
R14
LED2 R13
D1
LED3
C5
R21
R12 R16
R15
Switch Node
R1
R25
IC4
R3
LED1
C8
C9
R7
R2
IC8
C2
R23
D2
C18
1000V Max
+VBridge
-VBridge
IC6
C3
C4
R24
CON2
C11
C12
C13
C14
R6
CON3
IC2
IC7
C6
C7
R10
C2
C12
IC1
R22
C17
R9 R11
U2
C15
U1
TTL-
compatible
Input
C19
LED4
IC5
FD1
FB1
C16
CON4
CON1
Signal High Side
Signal Low Side
ENABLE
15V to 42V
continued on next page
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P-2
R-REF01-HB
Reference Design
Specifications
(measured at Ta= 25°C, 1.5Vin, full load after warm up unless otherwise stated)
Component List
Part
IC2
IC3
T1
T2
Note:
CON1
CON2
CON3
CON4
CON5
U1
U2
Description
DC/DC isolated converter for high-side gate-driver. Depending on the transistor type, fit the appropriate DC/DC converter
(please refer to pages P-10 to P-12).
DC/DC isolated converter for low-side gate-driver. Depending on the transistor type, fit the appropriate DC/DC converter
(see table 1).
High-side switching transistor (not supplied). Read important notice below.
Low-side switch transistor (not supplied). Read important notice below.
The transistors are placed on the edge of the PCB so that they are easy to mount to a heatsink. They can also be mounted
inverted on the bottom side of the PCB. Both TO247-3L and TO247-4L format transistors can be used by using the appropriate
hole set.
Connector for logic and driver supply. Connect a 15V, 18V, 24V or 36V DC supply here.
+V bridge voltage: connect a positive voltage up to 1kV in respect to power-GND to this connector.
-V bridge voltage: power-GND
Enable: a high signal enables the driver signals. Place the jumper on the connector to enable the signals permanently
Switching node of the half-bridge
Signal high-side: TTL-compatible input for the high-side transistor
Signal low-side: TTL-compatible input for the low-side transistor
Following DC/DC models are suitable for use with this reference design
Table 1
Model
R12P22005D*
R12P21503D*
R12P21509D*
R12P1509D
R12P06S*
R12P12S
Power [W]
2
2
2
1
1
1
Output Voltage [V]
+20/-5
+15/-3
+15/-9
+15/-9
+6
+12
Application
SiC MOSFETs
SiC MOSFETs
IGBTs
IGBTs
GaN
Cascode/Si MOSFET
*these models are included in the reference design. Each of them two times
Truth table (with IC1 SI8273 mounted):
Input
U1
L
L
H
H
X
U2
L
H
L
H
X
Enable
H
H
H
H
L
High-side Gate
L
L
H
L
L
Output
Low-side Gate
L
H
L
L
L
Invalid state
Device is disabled
Comment
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P-3
R-REF01-HB
Reference Design
Specifications
(measured at Ta= 25°C, 1.5Vin, full load after warm up unless otherwise stated)
NOTE: TRANSISTORS SOLD SEPARATELY
3-Pin
C
IGBT
(N-type)
4-Pin
C
recommended gate-driver
DC/DC:
R12P21509D
G
E
D
G
E
K
D
TO247-3L Package
SiC MOSFET
(N-type)
G
S
D
G
K
S
D
G
S
K
S
recommended gate-driver
DC/DC
R12P22005D or
R12P21503D
GaN HEMT
(normally off)
G
recommended gate-driver
DC/DC
R12P06S
TO247-4L Package
Important:
using three pin or four pin TO247 packages:
TO247-4L packages can be used without any modification of the PCB. The Kelvin source pin is already connected to the gate-driver ground.
TO247-3L packages however require a minor modification to join the gate-driver ground to the source pin ground. This can be
done by soldering 0Ω resistors across R19 and R20 or by making a solder bridge between the source and Kelvin source pads
(recommended for lowest gate inductance).
T1
T2
High-side Switch
Low-side Switch
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REV.: 0/2017
P-4
R-REF01-HB
Reference Design
Specifications
(measured at Ta= 25°C, 1.5Vin, full load after warm up unless otherwise stated)
Schematic
12V Supply
R12
10K
0603
100mW
1
2
1
D1
PMEG6010
1
2
+12V
+12V
3
39-29-0023
2
1
2
110R 4A 1806
1
2
C5
4.7uF
50V
1206
GND
2
2
GNDI
GNDI
GNDI
1
LED3
C1
22uF
25V
1210
1
2
1
+Vin
-Vin
+Vout
Gnd
-Vout
1
5
4
3
2
1
2
1
2
2
0R 0603 100mW
VDDA
IC6
ZXGD3006E6TA
1
2
1
1
2
1
2
CON1
FB1
C16
10uF
50V
1210
VDDA Supply
IC2
R12Pxx
VDDA
C3 R15
1uF
50V
0603
C4
1uF
50V
0603
IC5 R-78C12-1.0
1
+Vin
+Vout
R14
10K
0603
100mW
12K
1206
250mW
LED1
1
R24
2
CON2
62409-1
1
2
1
2
2
GNDI
R16
DRIVER
12K
SOURCE
1206
HS
250mW
C10
1uF
1kV
1
R4
22R
0207
1W
6
1
1
2
2
D
5V Supply
D2
1
GNDI
GNDA
+5V
1
1
T1
PMEG6010
2
+12V
IC8-A
3
VDDA
C6
100nF
50V
0603 IC1
3
1
2
1
2
4
1
2
2
4
L78L05
+Vout
GND
2
4
C12
100nF 50V 0603
1
2
1
1
2
2
GNDI
GNDI
IC8-B
GNDI
2
LED4
C7
1uF
50V
0603
in1
1
VDDI
VDDA
GNDI
VIA
VIB
VDDB
ENABLE
GNDB
VOA
GNDA
16
15
C11
1uF
50V
0603
2
1
C18
1uF
25V
0603
+Vin
C19
1uF
16V
0603
R23
10K
0603
100mW
+5V
2
R6
2K0
0603
100mW
3
R21
0R
0603
100mW
2
GS 4
1
G
5
KS 3
1
Si8273
R5
3R3
0207
1W
R8
10K
0603
100mW
2
2
S
2
1
GNDA
GNDA
VDDB
R19
1
GNDI
U1-A
U2-A
BNC
1
1
in2
GNDI
CON4
R9
10K
0603 +5V
100mW
1
1
2
14
GNDA
11
VDDB
1
2
ZXGD3006E6TA
1
IC4
R1
22R
0207
1W
6
1
1
2
2
DRIVER
SOURCE
HS
R26
0R
0603
100mW
2
0R
0603
100mW
D
1
2
1
CON5
T2
BNC
R10
10K
0603
100mW
IC7-A
UCC21520
VDDA
16
61300211121
2
2
en
5
C13
9
R11
10K
0603
100mW
8
1uF
50V
0603
out2
1
2
1
C14
100nF
50V
0603
1
2
2
2
1
1
2
VDD2
VOB
10
GNDB
+5V
3
VDDA
VCCI
GND
INA
INB
VDDB
OUTA
VSSA
C15
1uF
50V
0603
1
2
GNDI
R3
2K0
0603
100mW
3
4
GS 4
1G
5
KS 3
2
S
GNDI
4
15
out1
GNDA
VDDB
R2
3R3
0207
1W
R7
2
1
GNDI
R13
10K
0603
100mW
in1
in2
en
+5V
1
2
14
VDDB Supply
+12V
IC3
1
VDDB
1
GNDB
R25
10K
0603
100mW
2
11
GNDB
5
DISABLE
VSSB
R12Pxx
+Vout
Gnd
-Vout
5
4
3
1
2
1
2
9
8
VCCI
DT
OUTB
10
out2
22uF
25V
1210
1
2
2
-Vin
R22
10K
0603
100mW
1
1
2
GNDI GNDI
C17
2.2nF
50V
0603
2
6
C9
1uF
50V
0603
2
C2
+Vin
C8
1uF
50V
0603
R17
12K
1206
250mW
2
1
1
2
0R 0603 100mW
LED2
2
R20
1
1
GNDI
R18
12K
1206
250mW
0R
0603
100mW
1
2
2
CON3
62409-1
GNDB
Description:
The reference design board requires a single supply voltage with a range of 15-42V.
IC5 creates the regulated 12V supply for IC2 and IC3.
IC2 generates the isolated high-side gate-driver supply voltage. Choose the appropriate DC/DC converter from the selection provided.
IC3 generates the isolated low-side gate-driver supply voltage. Choose the appropriate DC/DC converter from the selection provided.
IC8 creates a +Vcc rail required for the gate driver.
IC1 isolates the control signals and level shifts the TTL input to the gate-drive voltages.
IC7 can be mounted instead of IC1 if reinforced isolation is required.
IC4 and IC5 amplify the maximum gate-drive current to ±10A.
R24 and R25 are not fitted. Zero
Ω
resistors can be mounted if IC4 and IC5 are not required (for example GaN transistors).
The input GND1 is galvanically isolated from the high-side GNDA and the low-side GNDB.
For single-ended designs, it is recommended to connect GND1 to Power-GND (CON3) with a star-earth configuration.
For full-bridge configurations, couple GND1 to Power-GND with Y-Capacitors to avoid generating high potentials caused by common mode currents.
R15, R16, R17 and R18 are not fitted. The positions can be used to add dummy loads for the power supplies if needed, for example, under very light load
conditions or low switching frequencies. Alternately R16 and R18 can be used to allow single-output voltage DC/DC converters to be used by connecting -Vout
to the gate-driver ground.
Configuration
Dual Output DC/DC, Normal Load (standard)
Dual Output DC/DC, Light Load
Single Output DC/DC, Normal Load
Single Output DC/DC, Light Load
1
R15, R17
Not required
12kΩ
Not required
12kΩ
R16, R18
Not required
12kΩ
Zero
Ω
Zero
Ω
R1 and R4 control the turn-on slew rate. 22Ω is fitted as standard.
R2 and R5 control the turn-off slew rate. 3.3Ω is fitted as standard.
These 0207 package resistors are made to withstand highly pulsed loads. Gate currents up to 10A are possible.
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