d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.
g. T
C
= 25 °C.
S15-2567-Rev. A, 02-Nov-15
Document Number: 66937
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ988DT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V, -16 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
30
1.2
1.1
-
-
-
-
-
-
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.0057
0.0028
0.0077
0.0040
54
52
-
-
2.4
2.2
± 100
± 100
1
1
10
10
-
-
0.0075
0.0041
0.0120
0.0052
-
-
S
A
μA
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gate Threshold Voltage
V
GS(th)
V
Gate Source Leakage
I
GSS
nA
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 19 A
V
GS
= 4.5 V, I
D
= 8 A
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
g
fs
V
DS
= 10 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 10 A
I
D(on)
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
Ch-1
Ch-2
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
0.3
1000
2425
280
730
34
65
0.034
0.027
14.3
34
6.9
15.4
2.8
5.8
1.6
2.6
7.8
20
1.6
1.7
-
-
-
-
-
-
0.068
0.054
21.5
51
10.5
23.1
-
-
-
-
-
-
3.2
3.4
nC
pF
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
C
rss
/ C
iss
Ratio
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Gate-Drain Charge
Q
gd
Output Charge
Q
oss
Gate Resistance
R
g
f = 1 MHz
S15-2567-Rev. A, 02-Nov-15
Document Number: 66937
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ988DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-On Delay Time
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
20
10
15
15
25
7
10
10
10
10
10
15
27
5
10
30
40
20
30
30
50
15
20
20
20
20
20
30
50
10
20
ns
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
t
f
I
S
T
C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.77
0.8
19
31
7
19
10
14
9
17
16.8
33.6
70
140
1.2
1.2
35
62
14
40
-
-
-
-
ns
V
A
Pulse Diode Forward Current (t = 100 μs)
I
SM
I
S
= 5 A, V
GS
= 0 V
I
S
= 10 A, V
GS
= 0 V
Body Diode Voltage
V
SD
Ch-1
Ch-2
Ch-1
Ch-2
Body Diode Reverse Recovery Time
t
rr
Channel-1
I
F
= 5 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
Body Diode Reverse Recovery Charge
Q
rr
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
nC
Reverse Recovery Fall Time
t
a
Reverse Recovery Rise Time
t
b
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2567-Rev. A, 02-Nov-15
Document Number: 66937
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ988DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 4 V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 3 V
42
44
55
Vishay Siliconix
33
T
C
= 25
°C
28
22
14
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
11
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
4
5
0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.020
1200
Transfer Characteristics
C
iss
0.016
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
960
0.012
720
C
oss
480
V
GS
= 4.5 V
0.008
V
GS
= 10 V
0.004
240
C
rss
0
0.000
0
14
28
42
I
D
- Drain Current (A)
56
70
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
1.7
Capacitance
I
D
= 10 A
1.5
V
GS
= 10 V
8
V
DS
= 15 V
6
V
DS
= 10 V
4
1.3
V
DS
= 20 V
1.1
V
GS
= 4.5 V
2
0.9
0
0
3
6
9
12
Q
g
- Total
Gate
Charge (nC)
15
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-2567-Rev. A, 02-Nov-15
On-Resistance vs. Junction Temperature
Document Number: 66937
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ988DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 10 A
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
0.024
Vishay Siliconix
0.018
T
J
= 125
°C
0.012
0.1
0.01
0.006
T
J
= 25
°C
0.001
0.0
0.3
0.6
0.9
1.2
V
SD
-
Source-to-Drain
Voltage (V)
1.5
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
0.5
40
On-Resistance vs. Gate-to-Source Voltage
0.2
30
V
GS(th)
- Variance (V)
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250 μA
10
- 0.7
Power (W)
150
20
- 1.0
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
I
DM
Limited
10
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
1
0.1
T
A
= 25
°C
BVDSS Limited
100 μs
1 ms
10 ms
100 ms
1
s
10
s
DC
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
S15-2567-Rev. A, 02-Nov-15
Document Number: 66937
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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