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MR2A16AVYS35

产品描述IC RAM 4M PARALLEL 44TSOP2
产品类别存储   
文件大小1MB,共20页
制造商Everspin
标准
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MR2A16AVYS35概述

IC RAM 4M PARALLEL 44TSOP2

MR2A16AVYS35规格参数

参数名称属性值
存储器类型非易失
存储器格式RAM
技术MRAM(磁阻式 RAM)
存储容量4Mb (256K x 16)
写周期时间 - 字,页35ns
访问时间35ns
存储器接口并联
电压 - 电源3 V ~ 3.6 V
工作温度-40°C ~ 105°C(TA)
安装类型表面贴装
封装/外壳44-TSOP(0.400",10.16mm 宽)
供应商器件封装44-TSOP2

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MR2A16A
FEATURES
• Fast 35 ns Read/Write cycle
• SRAM compatible timing, uses existing SRAM control-
lers without redesign
• Unlimited Read & Write endurance
• Data non-volatile for >20 years at temperature
• One memory replaces Flash, SRAM, EEPROM and
BBSRAM in a system for simpler, more efficient design
• Replaces battery-backed SRAM solutions with MRAM
to improve reliability
• 3.3 volt power supply
• Automatic data protection on power loss
• Commercial, Industrial, Extended temperatures
• AEC-Q100 Grade 1 option
• All products meet MSL-3 moisture sensitivity level
• RoHS-compliant SRAM TSOP2 and BGA Packages
256K x 16 MRAM Memory
44-pin TSOP2
48-ball BGA
INTRODUCTION
RoHS
The
MR2A16A
is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga-
nized as 262,144 words of 16 bits. The
MR2A16A
offers SRAM compatible 35 ns read/write timing
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati-
cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification.
The
MR2A16A
is the ideal memory solution for applications that must permanently store and re-
trieve critical data and programs quickly.
The
M2A16A
is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM
products and other nonvolatile RAM products.
The
MR2A16A
provides highly reliable data storage over a wide range of temperatures. The prod-
uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.
Copyright © Everspin Technologies 2018
1
MR2A16A Rev. 11.3 3/2018

MR2A16AVYS35相似产品对比

MR2A16AVYS35 MR2A16AVYS35R MR2A16AVMA35R MR2A16AMA35 MR2A16ACMA35 MR2A16AMYS35 MR2A16AMYS35R MR2A16AMA35R MR2A16ACYS35
描述 IC RAM 4M PARALLEL 44TSOP2 IC RAM 4M PARALLEL 48FBGA IC RAM 4M PARALLEL 48FBGA IC RAM 4M PARALLEL 48FBGA IC RAM 4M PARALLEL 44TSOP2 IC RAM 4M PARALLEL 44TSOP2 IC RAM 4M PARALLEL 48FBGA 存储器接口类型:Parallel 存储器容量:4Mb (256K x 16) 工作电压:3V ~ 3.6V 存储器类型:Non-Volatile 基于磁阻技术的SRAM存储器(MRAM),容量:4Mb (256K x 16)
存储器类型 非易失 - 非易失 非易失 非易失 非易失 非易失 非易失 Non-Volatile
存储器格式 RAM - RAM RAM RAM RAM RAM RAM -
技术 MRAM(磁阻式 RAM) - MRAM(磁阻式 RAM) MRAM(磁阻式 RAM) MRAM(磁阻式 RAM) MRAM(磁阻式 RAM) MRAM(磁阻式 RAM) MRAM(磁阻式 RAM) -
存储容量 4Mb (256K x 16) - 4Mb (256K x 16) 4Mb (256K x 16) 4Mb (256K x 16) 4Mb (256K x 16) 4Mb (256K x 16) 4Mb (256K x 16) -
写周期时间 - 字,页 35ns - 35ns 35ns 35ns 35ns 35ns 35ns -
访问时间 35ns - 35ns 35ns 35ns 35ns 35ns 35ns -
存储器接口 并联 - 并联 并联 并联 并联 并联 并联 -
电压 - 电源 3 V ~ 3.6 V - 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V -
工作温度 -40°C ~ 105°C(TA) - -40°C ~ 105°C(TA) 0°C ~ 70°C(TA) -40°C ~ 85°C(TA) -40°C ~ 125°C(TA) -40°C ~ 125°C(TA) 0°C ~ 70°C(TA) -
安装类型 表面贴装 - 表面贴装 表面贴装 表面贴装 表面贴装 表面贴装 表面贴装 -
封装/外壳 44-TSOP(0.400",10.16mm 宽) - 48-LFBGA 48-LFBGA 48-LFBGA 44-TSOP(0.400",10.16mm 宽) 44-TSOP(0.400",10.16mm 宽) 48-LFBGA -
供应商器件封装 44-TSOP2 - 48-FBGA(8x8) 48-FBGA(8x8) 48-FBGA(8x8) 44-TSOP2 44-TSOP2 48-FBGA(8x8) -

 
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