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MXLLCE15AE3TR

产品描述Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN
产品类别二极管   
文件大小269KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MXLLCE15AE3TR概述

Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN

MXLLCE15AE3TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
包装说明O-PALF-W2
针数2
制造商包装代码CASE 1
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY
最大击穿电压18.5 V
最小击穿电压16.7 V
击穿电压标称值17.6 V
外壳连接ISOLATED
最大钳位电压24.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压15 V
表面贴装NO
技术AVALANCHE
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
1500 Watt Low Capacitance
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) construction
- Plastic encapsulated TVS series for Thru Hole mounting
- Selections for 6.5 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MLCE6.5A thru MLCE170A, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Unidirectional construction. For bidirectional option see Figure 4.
Suppresses transients up to 1500 watts @10/1000µs (see Figure 1)
Clamps transients in less than 100 pico seconds
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote
129
for more details on the screening options.
Surface mount equivalent packages also available as MSMC(G/J)LCE6.5A - MSMC(G/J)LCE170A in
separate data sheet (consult factory for other surface mount options)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
CASE 1
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Low capacitance for data line protection to 1 MHz
Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part
1, par 2.4.1.1)
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
o
o
o
Class 1:
Class 2:
Class 3:
Class 4:
Class 1 :
Class 2:
Class 3:
Class 4:
MLCE6.5A to MLCE170A
MLCE6.5A to MLCE150A
MLCE6.5A to MLCE70A
MLCE6.5A to MLCE36A
MLCE6.5A to
MLCE6.5A to
MLCE6.5A to
MLCE6.5A to
MLCE90A
MLCE45 A
MLCE22A
MLCE11A
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
o
o
o
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
o
Class 2: MLCE6.5A to MLCE20A
Class 3: MLCE6.5A to MLCE10A
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (see Figure 1) with impulse repetition
rate of 0.01% or less* at lead temperature T
L
of 25°C
Operating & Storage Temperatures: -65 ºC to +150 ºC
Thermal Resistance: 22 ºC/W junction to lead at 3/8 inch (10 mm) from body, or 82 ºC/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1oz), track width 1 mm, length 25mm
Steady-State Power dissipation*: 5 watts at TL = 40 ºC, or 1.52 watts at TA = 25 ºC when mounted on
FR4 PC board described for thermal resistance
Solder Temperatures: 260
º
C for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated at ≤ V
WM
except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 3 and 4 for further protection
details in rated peak power for unidirectional and bidirectional configurations respectively.
RF01009 Rev A, June 2010
High Reliability Product Group
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