Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 零件包装代码 | SC-74 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 |
| 针数 | 6 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.5 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 50 |
| JESD-30 代码 | R-PDSO-G6 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | NPN AND PNP |
| 最大功率耗散 (Abs) | 0.3 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 200 MHz |
| Base Number Matches | 1 |
| XN4322 | XN04322 | UNR1222 | UNR1122 | UN1222 | UN1122 | |
|---|---|---|---|---|---|---|
| 描述 | Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) | Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) | Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) | Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) | Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) | Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 | IN-LINE, R-PSIP-T3 | - | IN-LINE, R-PSIP-T3 | - |
| Reach Compliance Code | unknow | unknow | unknow | - | unknow | - |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | EAR99 | - |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | - | BUILT-IN BIAS RESISTOR RATIO IS 1 | - |
| 最大集电极电流 (IC) | 0.5 A | 0.5 A | 0.5 A | - | 0.5 A | - |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | - | 50 V | - |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | - |
| 最小直流电流增益 (hFE) | 50 | 50 | 50 | - | 50 | - |
| JESD-30 代码 | R-PDSO-G6 | R-PDSO-G6 | R-PSIP-T3 | - | R-PSIP-T3 | - |
| 元件数量 | 2 | 2 | 1 | - | 1 | - |
| 端子数量 | 6 | 6 | 3 | - | 3 | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | - | IN-LINE | - |
| 极性/信道类型 | NPN AND PNP | NPN AND PNP | NPN | - | NPN | - |
| 最大功率耗散 (Abs) | 0.3 W | 0.3 W | 0.6 W | - | 0.6 W | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | - |
| 表面贴装 | YES | YES | NO | - | NO | - |
| 端子形式 | GULL WING | GULL WING | THROUGH-HOLE | - | THROUGH-HOLE | - |
| 端子位置 | DUAL | DUAL | SINGLE | - | SINGLE | - |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | SILICON | - |
| 标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz | - | 200 MHz | - |
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