VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 25 A
FEATURES
Base
cathode
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Designed and qualified
JEDEC
®
-JESD 47
according
to
2
1
3
1
Anode
3
Anode
D
2
PAK (TO-263AB)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
j
max.
Package
Circuit configuration
25 A
800 V, 1000 V, 1200 V
1.14 V
300 A
150 °C
D
2
PAK (TO-263AB)
Single
• Input rectification
• Vishay switches and output rectifiers which are available
in identical package outlines
DESCRIPTION
The VS-25ETS..S-M3 rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
20
THREE-PHASE BRIDGE
23
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
25
800 to 1200
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-25ETS08S-M3
VS-25ETS10S-M3
VS-25ETS12S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
1
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 106 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
25
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
Revision: 27-Oct-17
Document Number: 94890
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
25 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.14
9.62
0.87
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style
D
2
PAK
(TO-263AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.9
62
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
25ETS08S
Marking device
25ETS10S
25ETS12S
150
R
thJC
(DC) = 0.9 K/W
150
R
thJC
(DC) = 0.9 K/W
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
0
5
10
15
20
25
30
30°
60°
90°
120°
180°
Ø
140
Ø
Conduction angle
130
120
Conduction period
DC
110
30°
100
90
0
5
10
15
20
25
30
35
40
60°
90°
120°
180°
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 27-Oct-17
Document Number: 94890
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
300
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
40
Maximum Average Forward
Power Loss (W)
35
30
25
Peak Half
Sine
Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
200
20
15
10
5
T
J
= 150 °C
0
0
5
10
15
20
25
30
Ø
100
Conduction angle
0
1
10
100
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
60
300
DC
180°
120°
90°
60°
30°
RMS limit
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
50
40
30
20
Peak Half
Sine
Wave
Forward Current (A)
200
100
Ø
10
0
0
10
20
Conduction period
T
J
= 150 °C
30
40
0
0.01
0.1
1
10
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
1000
T
J
= 25 °C
100
T
J
= 150 °C
10
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 27-Oct-17
Document Number: 94890
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
0.1
Single
pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
25
2
E
3
T
4
S
5
12
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (25 = 25 A)
Circuit configuration
E = single
Package:
T = D
2
PAK (TO-263AB)
Type of silicon:
S = standard recovery rectifier
Voltage code x 100 = V
RRM
S = surface mountable
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
08 = 800 V
10 = 1000 V
12 = 1200 V
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Revision: 27-Oct-17
Document Number: 94890
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
QUANTITY PER TUBE
50
800
800
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-25ETS08S-M3
VS-25ETS08STRR-M3
VS-25ETS08STRL-M3
VS-25ETS10S-M3
VS-25ETS10STRR-M3
VS-25ETS10STRL-M3
VS-25ETS12S-M3
VS-25ETS12STRR-M3
VS-25ETS12STRL-M3
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
Revision: 27-Oct-17
Document Number: 94890
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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