VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
Anode
2, 4
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed
and
®
-JESD 47
JEDEC
qualified
J-STD-020,
according
2
1
3
1
3
Cathode Gate
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
16 A
800 V, 1200 V
1.25 V
45 mA
-40 to +125 °C
D
2
PAK
(TO-263AB)
Single SCR
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
DESCRIPTION
The VS-25TTS...S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
3.5
8.5
16.5
THREE-PHASE BRIDGE
5.5
13.5
25.0
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
16 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
16
25
800 to 1200
350
1.25
500
150
-40 to +125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-25TTS08S-M3
VS-25TTS12S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
I
RRM
/I
DRM
,
AT 125 °C
mA
10
Revision: 04-Jan-18
Document Number: 96414
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
VALUES
TYP.
16
25
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
VS-25TTS08,
VS-25TTS12
V
R
= rated V
RRM
/V
DRM
Anode supply = 6 V,
resistive load, initial I
T
= 1 A,
T
J
= 25 °C
-
200
500
150
V/μs
A/μs
300
350
450
630
6300
1.25
12.0
1.0
0.5
10
150
mA
A
2
s
A
2
s
V
m
V
A
MAX.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
TEST CONDITIONS
T
C
= 93 °C, 180° conduction half sine wave
UNITS
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GT
V
GD
I
GD
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
T
J
= 125 °C, V
DRM
= rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.9
4
110
μs
UNITS
Revision: 04-Jan-18
Document Number: 96414
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA (1)
DC operation
TEST CONDITIONS
VALUES
-40 to +125
1.1
°C/W
40
2
0.07
Case style D
2
PAK (TO-263AB)
25TTS08S
25TTS12S
g
oz.
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
Marking device
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
Maximum Allowable Case T
empera ture (°C)
Maximum Averag e On-state Power Loss (W)
130
R
thJC
(DC) = 1.1 °C/ W
120
25
180°
120°
90°
60°
30°
RMSLimit
20
Conduc tion Angle
15
110
30°
100
60°
90°
120°
180°
90
0
5
10
15
20
Average On-sta te Current (A)
10
Conduc tion Angle
5
T
J
= 125°C
0
0
4
8
12
16
20
Avera ge On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
Maximum Averag e On-state Power Loss (W)
130
R
thJC
(DC) = 1.1 °C/ W
120
35
30
25
20
RMS Limit
15
10
5
0
0
5
10
15
20
25
30
Avera ge On-sta te Current (A)
Conduction Period
110
DC
180°
120°
90°
60°
30°
Conduction Period
100
90
30°
80
0
5
90°
60° 120°
180°
10
15
20
DC
25
30
T
J
= 125°C
Average On-sta te Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 04-Jan-18
Document Number: 96414
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
400
ine
Peak Half S Wa ve On-state Current (A)
350
300
250
200
150
100
0.01
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Cond uc tion Ma y Not Be Ma inta ined.
Initia l T = 125°C
J
No Voltage Rea pp lied
Rated V
RRM
Reapp lied
ine
Pea k Half S Wave On-sta te Current (A)
350
300
At Any R
ated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
250
200
150
1
10
100
Number Of Equal Amplitude Half Cyc le Current Puls (N)
es
0.1
Pulse T
rain Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
100
T
J
= 25°C
10
T
J
= 125°C
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Imped anc e Z thJC (°C/W)
10
S
teady S
tate Value
(DC Opera tion)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 8 - Gate Characteristics
Revision: 04-Jan-18
Document Number: 96414
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
(1)
(2)
(3)
(4)
(a )
(b)
T = -10 °C
J
100
Instantaneous Gate Voltage (V)
R tangular gate pulse
ec
a)R ommended load line for
ec
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs tp >= 6 µs
,
b)Rec ommended load line for
<= 30% rated d i/ dt: 10 V, 65 ohms
10
tr = 1 µs tp >= 6 µs
,
PGM = 40 W, tp = 1 ms
PGM = 20 W, tp = 2 ms
PGM = 8 W, tp = 5 ms
PGM = 4 W, tp = 10 ms
T = 25 °C
J
J
T = 125 °C
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
25
2
-
-
-
-
-
-
-
-
T
3
T
4
S
5
12
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (25 = 25 A)
Circuit configuration:
T = single thyristor
Package:
T = D
2
PAK (TO-263AB)
Type of silicon:
S = standard recovery rectifier
Voltage rating: voltage code x 100 = V
RRM
S = surface mountable
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
9
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-25TTS08S-M3
VS-25TTS08STRR-M3
VS-25TTS08STRL-M3
VS-25TTS12S-M3
VS-25TTS12STRR-M3
VS-25TTS12STRL-M3
QUANTITY PER T/R
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
Revision: 04-Jan-18
Document Number: 96414
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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