DATA SHEET
Part No.
Package Code No.
AN26065A
ALGA011-W-0912ANA
Publication date: May 2012
Ver. AEB
1
AN26065A
Contents
Overview …………………………………………………………………………………………………………… 3
Features
…………………………………………………………………………………………………………… 3
Applications ………………………………………………………………………………………………………… 3
Package ……………………………………………………………………………………………………………… 3
Type ………………………………………………………………………………………………………………… 3
Application Circuit Example (Block Diagram) …………………………………………………………………… 4
Pin Descriptions …………………………………………………………………………………………………… 6
Current and Voltage Ranges for Pins …………………………………………………………………………… 7
Absolute Maximum Ratings ……………………………………………………………………………………… 8
Operating Supply Voltage Range
Electrical Characteristics
…………….………………………………………………………………… 8
………………………………………………………………………………………… 9
Electrical Characteristics (Referred design parameters) ………….…………………………………………… 13
Control Pin Mode Table ………………………………………………….………………………………………… 26
Technical Data ……………………………………………………………………………………………………… 27
I/O block circuit diagrams and pin function descriptions ……………………………………………………… 27
P
D
⎯
T
a
diagram
………………………………………………………………………………………………… 29
Usage Notes ………………………………………….……………………………………………………………. 30
Ver. AEB
2
AN26065A
AN26065A
UMTS Triple Band LNA-IC (Band I, II, IV, IX / V, XIII)
Overview
AN26065A is LNA-IC for triple band (Band I, II, IV, IX / V, XIII) UMTS.
Realizing high performance by using 0.18
μm
SiGeC Bi-CMOS process (f
T
= 90 GHz, f
max
= 140 GHz).
Each Band is selectable and High/Low Gain-mode is changeable, controlled by integrated CMOS logic circuit.
Achieving miniaturization by using small size package.
[ Unit: MHz ]
Band
I
II
III
IV
V
VI
VII
VIII
IX
TX
1920 to 1980
1850 to 1910
1710 to 1785
1710 to 1755
824 to 849
830 to 840
2500 to 2570
880 to 915
1750 to 1785
RX
2110 to 2170
1930 to 1990
1805 to 1880
2110 to 2155
869 to 894
875 to 885
2620 to 2690
925 to 960
1845 to 1880
Features
Low voltage operation
Low current consumption
High gain(Gain)
+2.85 V typ.
4.7 mA typ.
25
μA
typ.
16.5 dB typ.
16.5 dB typ.
16.3 dB typ.
1.40 dB typ.
1.10 dB typ.
1.40 dB typ.
2.0 dBm typ.
4.0 dBm typ.
2.5 dBm typ.
(High-Gain mode)
(Low-Gain mode)
fRX = 2140 MHz
fRX = 881.5 MHz
fRX = 1960 MHz
fRX = 2140 MHz
fRX = 881.5 MHz
fRX = 1960 MHz
fRX = 2140 MHz
fRX = 881.5 MHz
fRX = 1960 MHz
Low noise figure(NF)
Low distortion
(IIP3 +10 MHz offset)
Small package(WLCSP)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
Applications
Triple-band UMTS handset.
Package
11 pin Wafer level chip size package (WLCSP)
Size : 0.86 mm
×
1.16 mm (0.3 mm pitch)
Type
Bi-CMOS IC
Ver. AEB
3
AN26065A
Application Circuit Example 1 (Block Diagram)
Note) See "External parts 1" on Page47.
(Top View)
LNA1
OUT
(Band II, IX)
LNA2
OUT
(Band I)
LNA3
OUT
(Band V,VIII)
L4
C7
L5
L6
C8
A1
VCC
A2
A3
A4
CNT1
(LNA select 1)
B1
C6
B2
B3
CNT2
(LNA select 2)
C1
C2
C3
C4
CNT3
(Gain control)
C1
C2
L1
C3
C4
L2
C5
L3
LNA1
IN
(Band II, IX)
LNA2
IN
(Band I)
LNA3
IN
(Band V,VIII)
Notes)
This application circuit is shown as an example but does not guarantee the design for mass production set.
This block diagram is for explaining functions. The part of the block diagram may be omitted, or it may be simplified.
Ver. AEB
4
AN26065A
Application Circuit Example 2 (Block Diagram)
Note) See "External parts 2" on Page48.
(
Top
View)
LNA1
OUT
(Band I, IV)
LNA2
OUT
(Band I)
LNA3
OUT
(Band V,VIII)
L4
L5
L6
C7
A1
VCC
A2
A3
A4
CNT1
(LNA select 1)
B1
C6
B2
B3
CNT2
(LNA select 2)
C1
C2
C3
C4
CNT3
(Gain control)
C1
C2
L1
C3
C4
L2
C5
L3
LNA1
IN
(Band I, IV)
LNA2
IN
(Band I)
LNA3
IN
(Band V,VIII)
Notes)
This application circuit is shown as an example but does not guarantee the design for mass production set.
This block diagram is for explaining functions. The part of the block diagram may be omitted, or it may be simplified.
Ver. AEB
5
嵌入式系统
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