VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 230 A
FEATURES
• Center amplifying gate
• International standard case TO-93 (TO-209AB)
• Glass-metal seal up to 1200 V
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
230 A
400 V, 1800 V, 200 V
1.55 V
150 mA
-40 °C to +125 °C
TO-93 (TO-209AB)
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
230
85
360
5700
5970
163
149
400 to 1200
100
-40 to 125
UNITS
A
°C
A
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-ST230S
08
12
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE
T
J
= T
J
MAXIMUM
V
mA
500
900
1300
30
Revision: 28-Sep-17
Document Number: 96113
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 78 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
VALUES
230
85
360
5700
5970
4800
5000
163
148
115
105
1630
0.92
0.98
0.88
0.81
1.55
600
1000 (300)
kA
2
s
V
m
V
mA
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 720 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI
F
/dt = 20 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
1000
1.0
μs
100
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNITS
V/μs
mA
Revision: 28-Sep-17
Document Number: 96113
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= - 40 °C
DC gate current required to trigger
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 12
V anode to cathode applied
180
90
40
2.9
1.8
1.2
10
VALUES
TYP.
MAX.
UNITS
10.0
2.0
3.0
20
5.0
-
150
-
-
3.0
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thC-hs
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.10
K/W
0.04
31
(275)
24.5
(210)
280
UNITS
°C
N·m
(lbf
in)
g
TO-93 (TO-209AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.016
0.019
0.025
0.036
0.060
RECTANGULAR CONDUCTION
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 28-Sep-17
Document Number: 96113
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
130
R
thJC
(DC) = 0.1 K/W
120
110
100
90
30°
80
70
0
100
200
60°
Maximum Allowable Case Temperature (°C)
130
R
thJC
(DC) = 0.1 K/W
120
110
Ø
Ø
Conduction angle
Conduction period
100
90
30°
80
0
50
100
150
200
250
60°
90°
120°
180°
90°
120°
180°
300
DC
400
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-State Power Loss (W)
350
300
250
200
150
100
T
J
= 125 °C
50
0
0
50
100
150
200
250
50
75
100
125
180°
120°
90°
60°
30°
RMS Limit
Ø
R
t
0.1
6K
A
h
S
Conduction angle
0.2
K
0.3
/ W
K/
W
0.4
K /W
0.5
K /W
/W
0.8 K
/W
1.2 K/
W
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
1K
0.
/W
=
8
0.
W
K/
-D
el
ta
R
Maximum Average On-State Power Loss (W)
450
400
350
300
250
200
150
100
50
0
0
DC
180°
120°
90°
60°
30°
RMS Limit
Ø
Conduction period
T
J
= 125 °C
/W
0.1
6K
/W
0.2
K/
W
0.3
K /W
0.4
K /W
0.5 K
/W
0.8 K / W
0.1
K
1.2 K/ W
R
th
S
A
=
08
0.
K
/W
-
D
el
ta
R
50
100
150
200
250
300
350
400
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 28-Sep-17
Document Number: 96113
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave On-State Current (A)
6000
5500
5000
4500
4000
3500
3000
2500
2000
0.01
Maximum non repetitive
surge
current vs.
pulse drain duration.
Control of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Peak Half
Sine
Wave On-State Current (A)
5500
5000
4500
4000
3500
3000
2500
2000
1
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
10
100
0.1
1
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
10 000
1000
100
T
J
= 25 °C
T
J
= 125 °C
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady state
value
R
thJC
= 0.1 K/W
(DC operation)
0.1
0.01
0.001
0.001
0.01
0.1
1
10
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 28-Sep-17
Document Number: 96113
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
