IR MOSFET
StrongIRFET™
IRL40SC228
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
40V
0.50m
0.65m
557A
360A
G
S
I
D (Package Limited)
D
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
G
S
S
SS
SS
D2PAK-7Pin
IRL40SC228
G
Gate
D
Drain
S
Source
Base Part Number
IRL40SC228
Package Type
D2PAK-7Pin
Standard Pack
Form
Tape and Reel Left
Quantity
800
Orderable Part Number
IRL40SC228
RDS(on), Drain-to -Source On Resistance ( m
)
5
600
ID = 100A
LIMITED BY PACKAGE
500
ID, Drain Current (A)
12
16
20
4
400
300
200
100
3
2
1
TJ = 125°C
TJ = 25°C
0
4
8
0
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
V GS, Gate-to-Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
2017-05-12
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
IRL40SC228
Max.
557
393
360
1440
416
2.8
± 20
Units
A
W
W/°C
V
°C
-55 to + 175
Storage Temperature Range
T
STG
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
E
AS (Thermally limited)
1275
Single Pulse Avalanche Energy
2150
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
0.36
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
R
JA
Junction-to-Ambient
–––
62
mJ
A
mJ
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Notes:
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min. Typ. Max.
40
––– –––
––– 0.031 –––
––– 0.50 0.65
––– 0.60 0.90
1.0 –––
2.4
––– –––
1.0
––– ––– 150
––– ––– 100
––– ––– -100
–––
2.2
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 100A
m
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40 V, V
GS
= 0V
µA
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 360A. Note that
Current
imitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer
to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited
by T
Jmax
, starting T
J
= 25°C, L = 0.146mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1008A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while VDS is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 65A, V
GS
=10V.
Pulse drain current is limited to 1440A by source bonding technology.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.infineon.com/technical-info/appnotes/an-994.pdf
2
2017-05-12
IRL40SC228
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
264
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
205
57
104
101
67
210
222
176
19680
2305
1575
2690
3390
Typ.
–––
–––
–––
2.0
42
43
43
45
1.7
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 100A
307
I
D
= 100A
V
DS
= 20V
–––
nC
V
GS
= 4.5V
–––
–––
–––
V
DD
= 20V
–––
I
D
= 30A
ns
–––
R
G
= 2.7
V
GS
= 4.5V
–––
–––
–––
–––
–––
–––
Max. Units
557
A
1440
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 32V
V
GS
= 0V, VDS = 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
C
oss eff.(ER)
Effective Output Capacitance (Energy Related)
C
oss eff.(TR)
Output Capacitance (Time Related)
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
D
S
T
J
= 25°C,I
S
=100A,V
GS
= 0V
T
J
= 25°C
V
DD
= 34V
V/ns T
J
= 175°C,I
S
= 100A,V
DS
= 40V
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
ns
3
2017-05-12
1000
1000
IRL40SC228
ID, Drain-to-Source Current (A)
3.25V
ID, Drain-to-Source Current (A)
3.25V
100
TOP
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.25V
100
TOP
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.25V
60µs
PULSE WIDTH
Tj = 25°C
BOTTOM
60µs
PULSE WIDTH
Tj = 175°C
BOTTOM
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.2
ID = 100A
V GS = 10V
1.8
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1.4
1
V DS = 10V
60µs PULSE WIDTH
0.1
0
1
2
3
4
5
1.0
0.6
-60
-20
20
60
100
140
180
V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14
12
10
8
6
4
2
0
ID= 100A
V DS= 32V
V DS= 20V
V DS= 8V
100000
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
V DS, Drain-to-Source Voltage (V)
100
V GS, Gate-to-Source Voltage (V)
0
50 100 150 200 250 300 350 400 450 500
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
2017-05-12
1000
1000
IRL40SC228
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 175°C
10
100µsec
100
1msec
10
LIMITED BY PACKAGE
TJ = 25°C
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.0
DC
1
V GS = 0V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V SD, Source-to-Drain Voltage (V)
0.1
10.0
V DS , Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V (BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
2.0
52
Id = 5.0mA
50
1.6
Energy (µJ)
48
1.2
46
0.8
44
0.4
42
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
V DS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
1.0
0.8
V GS = 3.5V
V GS = 4.5V
V GS = 6.0V
V GS = 8.0V
V GS = 10V
0.6
0.4
0
40
80
120
160
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
2017-05-12
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
