2016-08-11
High Power Infrared Emitter (850 nm)
Version 1.8
SFH 4232A
Features:
•
IR lightsource with high efficiency
•
Low thermal resistance (Max. 10 K/W)
•
Centroid wavelength 850 nm
•
Superior Corrosion Robustness (see chapter package outlines)
Applications
Infrared Illumination for cameras
•
•
Surveillance systems
•
Machine vision systems
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type:
Total Radiant Flux
Φ
e
[mW]
I
F
= 1 A, t
p
= 10 ms
SFH 4232A
SFH 4232A-DB
Note:
Ordering Code
650 (≥400)
500 ... 800
Q65111A3235
Q65111A5199
Measured with integrating sphere.
2016-08-11
1
Version 1.8
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operation and storage temperature range
Junction temperature
Reverse voltage
Forward current
Surge current
(t
p
≤ 1.5 ms, D = 0)
Power consumption
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance junction - soldering point
Note:
SFH 4232A
Symbol
T
op
; T
stg
T
j
V
R
I
F
I
FSM
P
tot
V
ESD
R
thJS
Values
-40 ... 100
125
1
1000
2
2100
2
10
Unit
°C
°C
V
mA
A
mW
kV
K/W
For the forward current and power consumption please see "maximum permissible forward current" diagram
Characteristics
(T
A
= 25 °C)
Parameter
Peak wavelength
(I
F
= 1 A, t
p
= 10 ms)
Centroid wavelength
(I
F
= 1 A, t
p
= 10 ms)
Spectral bandwidth at 50% of I
max
(I
F
= 1 A, t
p
= 10 ms)
Half angle
Dimensions of active chip area
Rise and fall times of I
e
( 10% and 90% of I
e max
)
(I
F
= 2 A, R
L
= 50 Ω)
Forward voltage
(I
F
= 1 A, t
p
= 20 ms)
Forward voltage
(I
F
= 2 A, t
p
= 100 µs)
Radiant intensity
(I
F
= 1 A, t
p
= 100 µs)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
λ
peak
λ
centroid
∆λ
ϕ
LxW
t
r
/ t
f
Values
860
850
30
± 60
1x1
11 / 14
1.65 (≤ 2.1)
1.9 (≤ 2.5)
205
Unit
nm
nm
nm
°
mm x
mm
ns
V
V
mW/sr
(typ (max)) V
F
(typ (max)) V
F
I
e, typ
2016-08-11
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Version 1.8
SFH 4232A
Parameter
Temperature coefficient of I
e
or Φ
e
(I
F
= 1 A, t
p
= 10 ms)
Temperature coefficient of V
F
(I
F
= 1 A, t
p
= 10 ms)
Temperature coefficient of wavelength
(I
F
= 1 A, t
p
= 10 ms)
Grouping
(T
A
= 25 °C)
Group
Min Total Radiant Flux
I
F
= 1 A, t
p
= 10 ms
Φ
e min
[mW]
SFH 4232A - DA
SFH 4232A - DB
SFH 4232A - EA
Note:
Symbol
(typ)
(typ)
(typ)
TC
I
TC
V
TC
λ,
centroid
Values
-0.3
-1
0.3
Unit
%/K
mV / K
nm / K
Max Total Radiant Flux
I
F
= 1 A, t
p
= 10 ms
Φ
e max
[mW]
630
800
1000
400
500
630
Measured with integrating sphere.
Only one group in one package unit ( variation lower 1.6:1)
Relative Total Radiant Flux
1)
page 11
Φ
e
/ Φ
e
(1A) = f(I
F
), T
A
= 25°C, Single pulse,
t
p
= 100μs
10
1
OHF05526
Max. Permissible Forward Current
I
F
= f(T
S
), R
thJS
= 10 K/W
1100
mA
900
800
700
600
OHF05527
Φ
e
(1 A)
10
0
5
Φ
e
I
F
10
-1
5
500
400
300
10
-2
5
200
100
0
-40 -20 0
20 40 60 80
˚C 120
10
-3
10
-2
5 10
-1
5 10
0
A
10
1
T
S
I
F
2016-08-11
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Version 1.8
Forward Current
1)
page 11
I
F
= f(V
F
), single pulse, t
p
= 100 µs, T
A
= 25°C
SFH 4232A
Permissible Pulse Handling Capability
I
F
= f(t
p
), T
S
= 85 °C, duty cycle D = parameter
I
F
10
1
A
OHF05607
I
F
2.1
A
1.9
1.8
OHF05528
D
=
T
P
t
t
P
I
F
T
10
0
1.7
1.6
1.5
1.4
D
=
0.01
0.02
0.05
0.1
0.2
0.33
0.5
1
10
-1
1.3
1.2
1.1
1.0
0.9
10
-2
1
1.2
1.4
1.6
1.8 V 2
0.8
-5
10 10
-4
10
-3
10
-2
10
-1
10
0
10
1
s 10
2
V
F
Radiation Characteristics
1)
page 11
I
rel
= f(ϕ), T
A
= 25°C
40˚
30˚
20˚
10˚
0˚
t
p
OHL01660
ϕ
1.0
50˚
0.8
0.6
60˚
0.4
70˚
0.2
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
0
2016-08-11
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Version 1.8
SFH 4232A
Package Outline
Dimensions in mm (inch).
Note:
Corrosion robustness better than EN 60068-2-60 (method 4): with enhanced corrosion test: 40°C / 90%rh
/ 15ppm H2S / 336h
Type:
SFH 4232A
Package
Golden Dragon
Approximate Weight:
0.2 g
2016-08-11
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