MGA-12516
High Gain, Matched-Pair Dual,
Very Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-12516 is an economical, easy-
to-use GaAs MMIC matched-pair dual Low Noise Amplifier
(LNA). The LNA has very low noise, high gain and excellent
isolation achieved through the use of Avago Technologies’
proprietary 0.25um GaAs Enhancement-mode pHEMT
process. It is housed in a miniature 4.0 x 4.0 x 0.85mm 16-
pin Small Leadless Package (SLP) package. The compact
footprint and low profile coupled with ultra-low noise and
high gain make the MGA-12516 an ideal choice as a low
noise amplifier for cellular infrastructure for GSM, CDMA
,TD-SCDMA and WiMAX applications.
Features
•
Dual, matched-pair LNAs
•
Optimum frequency of operation 800MHz-3GHz
•
Very low noise figure
•
High gain
•
Excellent isolation
•
GaAs E-pHEMT Technology
[1]
•
Low cost small package size: 4.0x4.0x0.85 mm
3
•
Excellent uniformity in product specifications
Pin Configuration and Package Marking
4.0 x 4.0 x 0.85 mm
3
16-lead SLP
nc Pin 13
RFout1 Pin 12
nc Pin 11
nc Pin 10
RFout2 Pin 9
Pin 8 nc
Pin 7 nc
Pin 6 nc
Pin 5 nc
nc Pin 14
nc Pin 15
nc Pin 16
Pin 1 RFin1
Specifications
1.95GHz; 4V, 50mA per channel (typ)
•
0.58 dB Noise Figure
•
24 dB Gain
•
38.6 dB Isolation
•
33.3 dBm Output IP3
•
18.4 dBm Output Power at 1dB gain compression
KC2
YYWW
XXXX
GND
Pin 2 nc
Pin 3 nc
Pin 4 RFin2
nc = not connected
Applications
•
Balanced dual low noise amplifier for cellular
infrastructure for GSM, CDMA, TD-SCDMA and WiMAX
used with 3-dB hybrid couplers at inputs and outputs
Notes:
1. Enhancement mode technology employs positive gate bias, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
TOP VIEW
BOTTOM VIEW
Notes:
Package marking provides orientation and identification
“KC2” = Product Code
“YYWW” = Work Week and Year of manufacture
“XXXX” = Last 4 digit of Lot number
Simplified Schematic
VGG
VDD
PACKAGE
CHN#1
IN1
OUT1
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
CHN#2
IN2
OUT2
VGG
VDD
MGA-12516 Absolute Maximum Rating
[1]
Symbol
VDD
VGG
P
in,max
(ON)
P
in,max
(OFF)
P
diss
T
j
T
STG
Parameter
Device Voltage, RF output to ground
Gate Voltage
CW RF Input Power (at V
DD
=4V, V
GG
=0.58V).
CW RF Input Power( at V
DD
=4V, V
GG
=0V)
Total Power Dissipation
[2]
Junction Temperature
Storage Temperature
Units
V
V
dBm
dBm
W
o
C
o
C
Absolute Max.
6
0.8
18
28
1.2
150
-65 to 150
Thermal Resistance
[3], θjc = 34 ºC/Wat VDD= 4V, IDD=50mA per channel
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Power dissipation with both channels turned on. Board temperature T
B
is 25
o
C. Derate 29.5mW/
o
C for T
B
>109
o
C.
3. Thermal resistance measured using Infra-red measurement technique, with both channels turned on, hence IDDtotal=100mA.
Electrical Specifications
RF performance at 4V, 50mA,1.95 GHz, T
A
= 25 °C, given for each RF channel, measured on the demo board in Fig. 28 with
component list in Table 1, for 1.95GHz matching.
Symbol
VGG
NF
[4]
Gain
OIP3
[5]
OP1dB
IRL
ORL
|S12|
|ISOL
1-2
|
Parameter and Test Condition
Operational Gate Voltage (to adjust for given IDD)
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Reverse Isolation
Isolation between IN1 and IN2
Units
V
dB
dB
dBm
dBm
dB
dB
dB
dB
Min.
0.43
22.3
Typ.
0.58
0.58
24
33.3
18.4
13.5
4.6
38.6
43
Max.
0.7
0.9
25.8
Notes:
4. Board transmission line losses have been deembedded.
5. 1.95GHz IP3 test condition: f
tone1
= 1.950 GHz, f
tone2
= 1.951 GHz with input power of -20dBm per tone.
2
Product Consistency Distribution Charts
[1]
=1.95GHz, unless stated otherwise.
T
A
=
25 °C, 1.95GHz, Vdd = 4V, Idd = 50mA, F
RF
Figure
1. Gain at 1.95 GHz , VDD=4V; IDD=50mA
Figure 2. NF at 1.95 GHz , VDD=4V; IDD= 50mA
Figure 3. VGG at 1.95 GHz , VDD=4V; IDD= 50mA
Notes:
1. Distribution data sample size are 500 samples taken from 3 different wafer lots, measured on a production test board with contactor. Future wafers
allocated to this product may have nominal values anywhere between the upper and lower limit.
160
140
120
IDD(mA)
100
80
60
40
20
0
0
1
2
3
VDD(V)
4
5
6
0.45V
0.40V
0.60V
0.60V
0.55V
0.55V
0.50V
0.45V
0.40V
0.50V
Figure 4. IDD vs VDD vs VGG, All Channels Terminated at 50ohm
(both Channels turn on)
3
MGA-12516 Typical Performance
Measured on demo board in Fig. 28 with component list in Table 1, for 1.95GHz matching. T
A
= +25
o
C, VDD = 4V, IDD =
50mA per channel, Frequency=1.95GHz, unless stated otherwise.
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
Figure 5. Noise Figure vs Frequency vs Channel
CHN#1
CHN#2
30
25
20
15
10
5
CHN#1
CHN#2
Gain(dB)
CHN#1
CHN#2
NF(dB)
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
Figure 6. Gain vs Frequency vs Channel
50
45
40
OIP3 (dBm)
30
25
20
15
10
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2
Frequency(GHz)
Figure 7. OIP3 vs Frequency vs Channel
35
2.1 2.2
22
20
18
16
14
12
10
8
CHN#1
6
4
CHN#2
2
0
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
Figure 8. OP1dB vs Frequency vs Channel
P1dB(dBm)
ORL(dB)
CHN#1
CHN#2
20
15
IRL(dB)
10
5
0
10
8
6
4
2
0
0.9
CHN#1
CHN#2
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2
Frequency(GHz)
2.1 2.2
Figure 9. IRL vs Frequency vs Channel
Figure 10. ORL vs Frequency vs Channel
4
MGA-12516 Typical Performance
Measured on demo board in Fig. 28 with component list in Table 1, for 1.95GHz matching. T
A
= +25
o
C, VDD = 4V, IDD =
50mA per channel, Frequency=1.95GHz, unless stated otherwise.
-30
-35
S12(dB)
-40
-45
-50
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
Figure 11. S12 vs Frequency vs Channel
|ISOL|dB
60
50
40
30
20
ISO(IN1-IN2)
CHN#1
CHN#2
10
ISO(OUT1-OUT2)
0
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
Figure 12. Channel Isolation vs Frequency, at Inputs and Outputs
1.6
1.4
1.2
1
NF(dB)
0.8
0.6
0.4
0.2
0
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
-40ºC
+25ºC
+85ºC
30
25
20
Gain(dB)
15
10
5
0
-40ºC
+25ºC
+85ºC
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
Figure 13. Noise Figure vs Frequency vs Temperature
Figure 14. Gain vs Frequency vs Temperature
40
35
30
OIP3(dBm)
20
15
10
5
0
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2
Frequency(GHz)
Figure 15. OIP3 vs Frequency vs Temperature
2.1 2.2
-40ºC
+25ºC
+85ºC
P1dB(dBm)
25
25
23
21
19
17
15
13
11
9
7
5
-40ºC
+25ºC
+85ºC
0.9
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Frequency(GHz)
Figure 16. OP1dB vs Frequency vs Temperature
5
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