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KSA1142
KSA1142
Audio Frequency Power Amplifier
High Freqency Power Amplifier
• Complement to KSC2682
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 180
- 180
-5
- 100
1.2
8
150
- 55 ~ 150
Units
V
V
V
mA
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
V
CB
= - 180V, I
E
= 0
V
EB
= - 3V, I
C
= 0
V
CE
= - 5V, I
C
= - 1mA
V
CE
= - 5V, I
C
= - 10mA
I
C
= - 50mA, I
B
= - 5mA
I
C
= - 50mA, I
B
= - 5mA
V
CE
= - 10V, I
C
= - 20mA
V
CB
= - 10V, I
E
= 0, f=1MHz
V
CE
= - 10V, I
C
= - 1mA
R
S
= 10kΩ, f = 1MHz
90
100
200
200
- 0.16
- 0.8
180
4.5
4
7
Min.
Typ.
Max.
-1
-1
320
- 0.5
- 1.5
V
V
MHz
pF
dB
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classification
Classification
h
FE2
O
100 ~ 200
Y
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA1142
Typical Characteristics
-160
1000
Pulse Test
Ic[mA], COLLECTOR CURRENT
-140
V
CE
= -5V
Pulse Test
h
FE
, DC CURRENT GAIN
-140
-160
-120
-100
I
B
= -500㎂ I
B
= -450㎂ I = -400㎂
B
100
-80
I
B
= -30
I
B
= -350㎂
0
㎂
-60
I
B
= -250
㎂
I
B
= -200
㎂
I
B
= -150
㎂
I
B
= -100㎂
10
-40
-20
I
B
= -50㎂
I
B
= 0
1
-0.1
0
0
-20
-40
-60
-80
-100
-120
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
100
C
ob
(PF)C
ib
(PF),CAPACITANCE
I
C
= 10 I
B
Pulse Test
f=1.0MHz
I
E
=0(C
OB
)
I
E
=0(C
IB
)
C
ib
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
C
ob
-0.01
0.1
1
1
10
100
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
CB
(v), COLLECTOR-BASE VOLTAGE
V
CB
(v), EMITTER-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
1000
-1000
V
CE
= -10V
I
C
[mA], COLLECTOR CURRENT
I
C
(DC) Max.
-100
D
10ms
ms
=1
PW
s)
0m
(5
C
D
n
tio
pa
si
is ited
m
Li
100
d
b
S/ mite
Li
-10
10
-1
-10
-100
-1
-1
-10
-100
V
CEO
MAX.
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
8.30
7.70
4.00
3.80
3.20
1.35
1.70
1.50
0.85
0.65 3X
D
E
14.20 MAX
3.45
3.05
11.20
10.80
1.95
1.55
1.00
#1
TOP VIEW
3°
2.29
0.254
M
0.60
0.45 3X
SIDE VIEW
FRONT VIEW
NOTES:
A.
B.
C.
D
E
F.
PRODUCTION
CODE
TSSTU
TSTU
NONE
(STD LENGTH)
TERMINAL
LENGTH "D"
3.45 - 4.05
2.36 - 2.96
12.76 - 13.36
TERMINAL
LENGTH "E"
6.45-7.45
5.36-6.36
15.76-16.76
NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
ALL DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
FOR TERMINAL LENGTH "D", REFER TO TABLE
FOR TERMINAL LENGTH "E", REFER TO TABLE
DRAWING FILENAME: MKT-TO126AArev2
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