2017-06-23
Silicon PIN Photodiode
Version 1.3
SFH 2200
Features:
•
Suitable for reflow soldering
•
Especially suitable for applications from 400 nm to 1100 nm
•
small package: (WxDxH) 4 mm x 5.1 mm x 0.85mm
•
Solder control structure
Applications
Photointerrupters
•
•
Industrial electronics
•
Consumer electronics
•
For control and drive circuits
•
Remote control
Ordering Information
Type:
Photocurrent
I
P
[µA]
Spectral sensitivity
S [nA/Ix]
Ordering Code
E
v
= 1000 lx, white LED, V
R
= 5 V, Std. Light A, T
V
R
= 5 V
= 2856 K
SFH 2200
8 (≥ 5)
71
Q65112A0250
2017-06-23
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Reverse voltage
Total Power dissipation
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance for mounting on pcb
Characteristics
(T
A
= 25 °C)
Parameter
Spectral sensitivity
(V
R
= 5 V, Std. Light A, T = 2856 K)
Photocurrent
(E
v
= 1000 lx, white LED, V
R
= 5 V)
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of radiant sensitive area
Half angle
Dark current
(V
R
= 10 V)
Spectral sensitivity of the chip
(λ = 950 nm)
Quantum yield of the chip
(λ = 950 nm)
Open-circuit voltage
(E
v
= 1000 lx, Std. Light A)
Short-circuit current
(E
v
= 1000 lx, Std. Light A)
Rise and fall time
(V
R
= 5 V, R
L
= 50 Ω, λ = 850 nm, I
P
= 800 µA)
Forward voltage
(I
F
= 100 mA,
E
= 0)
Capacitance
(V
R
= 0 V, f = 1 MHz, E = 0)
(typ (min))
(typ (min))
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
S
I
P
λ
S max
λ
10%
A
LxW
ϕ
Values
71
8 (≥ 5)
940
Symbol
T
op
; T
stg
V
R
P
tot
V
ESD
R
thJA
Values
-40 ... 85
20
150
2000
275
SFH 2200
Unit
°C
V
mW
V
K/W
Unit
nA/Ix
µA
nm
nm
mm
2
mm x
mm
°
nA
A/W
Electro
ns
/Photon
mV
µA
µs
V
pF
(typ) 300
... 1100
7.02
2.65 x 2.65
± 60
1 (≤ 25)
0.7
0.91
(typ (max)) I
R
(typ)
(typ)
S
λ typ
η
(typ (min))
(typ)
(typ)
(typ)
(typ)
V
O
I
SC
t
r
, t
f
V
F
C
0
365 (≥ 300)
71
0.04
1
60
2017-06-23
2
Version 1.3
SFH 2200
Parameter
Temperature coefficient of V
O
Temperature coefficient of I
SC
(E
v
= 1000 lx, Std. Light A)
Noise equivalent power
(V
R
= 10 V, λ = 950 nm)
Detection limit
(V
R
= 10 V, λ = 950 nm)
Relative Spectral Sensitivity
1)
page 12
S
rel
= f(λ)
(typ)
(typ)
(typ)
(typ)
Symbol
TC
V
TC
I
NEP
D
*
Values
-2.6
0.18
0.026
1.0e13
Unit
mV / K
%/K
pW /
Hz
½
cm x
Hz
½
/ W
Photocurrent / Open-Circuit Voltage
1)
page 12
I
P
(V
R
= 5 V) / V
O
= f(E
V
)
100
S
rel
%
80
60
40
20
0
nm
400 500 600 700 800 900 1000 1100
nm
nm
2017-06-23
3
Version 1.3
Dark Current
1)
page 12
I
R
= f(V
R
), E = 0
[ ]
2000
1800
1600
1400
1200
1000
800
600
400
200
0
5
10
0 02 2 H FS
SFH 2200
Power Consumption
P
tot
= f(T
A
), R
thJA
= 275 K/W
Capacitance
1)
page 12
C = f(V
R
), f = 1 MHz, E = 0
60
Dark Current
1)
page 12
I
R
= f(T
A
), V
R
= 10 V, E = 0
C
pF
40
20
0
0,01
0,1
1
10
V
V
R
2017-06-23
4
V
R
V
A p
R
I
15
20
[ ]
Version 1.3
Directional Characteristics
1)
page 12
S
rel
= f(ϕ)
40
30
20
10
SFH 2200
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Package Outline
Dimensions in mm.
Package
TOPLED D5140, Silicone, colourless, clear
2017-06-23
5
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