Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
FEATURES
•
Low current (max. 25 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic
package.
1
handbook, halfpage
BF824W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BF824W
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
MARKING CODE
(1)
F8∗
1
Top view
2
MAM048
2
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−30
−30
−4
−25
−25
200
+150
150
+150
V
V
V
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 15
2
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
BE
C
rb
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
= 0; V
CE
=
−10
V; f = 1 MHz
V
CE
=
−10
V; f = 100 MHz; note 1
I
C
=
−1
mA
I
C
=
−4
mA
I
C
=
−8
mA
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
250
400
390
−
−
−
−
−
−
25
25
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
BF824W
UNIT
K/W
MAX.
−50
−10
−100
−
−
−900
0.3
UNIT
nA
µA
nA
mV
pF
MHz
MHz
MHz
1999 Apr 15
3
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BF824W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 15
4
单片机
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