BPS9G2934X-400
LDMOS S-band radar power module
Rev. 1 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
400 W GEN9 LDMOS power module intended for S-band radar applications in the
frequency range from 2.9 GHz to 3.4 GHz.
Table 1.
Test information
Typical RF performance at T
amb
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; P
L
= 400 W; in a
class-AB test circuit.
Test signal
pulsed RF
f
(MHz)
2900 to 3400
V
DS
(V)
32
P
L
(W)
400
G
p
(dB)
12
D
(%)
43
1.2 Features and benefits
400 W pulsed RF power designed for S-band (2.9 GHz to 3.4 GHz)
Small size: 5.5
3.5 cm
Low weight: 85 g
Excellent ruggedness, VSWR 10 : 1
1
10
6
h MTTF
Input/output 50
matched
High efficiency
Excellent thermal stability (silver plated base plate)
High flexibility with respect to pulse formats
100 % RF testing in production
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2.9 GHz to 3.4 GHz
BPS9G2934X-400
LDMOS S-band radar power module
2. Pinning information
2.1 Pinning
V
GS
3
4
V
DS
RF_IN
1
2
RF_OUT
amp00108
Top view.
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
RF_IN
RF_OUT
V
GS
V
DS
Pin description
Pin
1
2
3
4
Description
RF input
RF output
gate-source voltage
drain-source voltage
3. Ordering information
Table 3.
Ordering information
Package
Name
BPS9G2934X-400
-
Description
pallet LDMOS; 4 mounting holes; 4 terminations
Version
-
Type number
4. Block diagram
RF_IN
RF_OUT
V
GS
V
DS
amp00109
Fig 2.
Block diagram
BPS9G2934X-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 November 2017
2 of 10
BPS9G2934X-400
LDMOS S-band radar power module
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
amb
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
ambient temperature
storage temperature
junction temperature
Conditions
Min
-
6
40
20
[1]
Max
65
+11
+85
+70
225
Unit
V
V
C
C
C
-
BLS9G2934L(S)-400 transistor junction temperature.
Continuous use at maximum temperature has influence on the reliability, for details refer to the online MTF
calculator.
6. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
[1]
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
C;
P
L
= 400 W;
t
p
= 300
s;
= 10 %
[1]
Typ
Unit
0.145 K/W
BLS9G2934L(S)-400 transistor thermal impedance.
7. Characteristics
Table 6.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 400 mA;
T
amb
= 25
C; unless otherwise specified.
Symbol
f
V
DD
V
GS
G
p
P
droop(pulse)
G
p
D
RL
in
t
r
t
f
Parameter
frequency
supply voltage
gate-source voltage
power gain variation
pulse droop power
power gain
drain efficiency
input return loss
rise time
fall time
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
Conditions
Min
2900
-
-
-
-
10
40
5.5
-
-
Typ
-
32
1.8
3
0.15
12
43
8
6
6
Max
3400
-
2.5
-
0.5
-
-
-
50
50
Unit
MHz
V
V
dB
dB
dB
%
dB
ns
ns
7.1 Ruggedness in class-AB operation
The BPS9G2934X-400 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 400 mA; P
L
= 400 W; t
p
= 300
s;
= 10 %.
BPS9G2934X-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 November 2017
3 of 10
BPS9G2934X-400
LDMOS S-band radar power module
8. Test information
8.1 Graphical data
16
G
p
(dB)
14
G
p
(1)
(2)
(3)
(1)
(2)
(3)
amp00417
60
η
D
(%)
50
58
P
L
(dBm)
56
amp00418
12
40
(1)
(2)
(3)
10
η
D
8
30
54
20
52
6
10
4
49
50
51
52
53
54
55
56
P
L
(dBm)
57
0
50
2800
2900
3000
3100
3200
3300 3400
f (MHz)
3500
t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; V
DS
= 32 V;
T
amb
= 25
C.
(1) f = 2900 MHz
(2) f = 3100 MHz
(3) f = 3400 MHz
t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; V
DS
= 32 V;
T
amb
= 25
C.
(1) P
L(1dB)
(2) P
L(2dB)
(3) P
L(3dB)
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
Fig 4.
Output power at gain compression as a
function of frequency; typical values
BPS9G2934X-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 November 2017
4 of 10
BPS9G2934X-400
LDMOS S-band radar power module
57
P
L
(dBm)
55
amp00419
60
η
D
(%)
50
amp00420
40
53
(3)
(2)
(1)
30
20
51
10
49
30
32.5
35
37.5
40
42.5
45 47.5
P
i
(dBm)
50
0
2800
2900
3000
3100
3200
3300 3400
f (MHz)
3500
t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; V
DS
= 32 V;
T
amb
= 25
C.
(1) f = 2900 MHz
(2) f = 3100 MHz
(3) f = 3400 MHz
t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; V
DS
= 32 V;
T
amb
= 25
C;
P
L
= 400 W.
Fig 5.
Output power as a function of input power;
typical values
16
amp00421
Fig 6.
Drain efficiency as a function of frequency;
typical values
16
amp00422
G
p
(dB)
12
RL
in
(dB)
12
8
8
4
4
0
2800
2900
3000
3100
3200
3300 3400
f (MHz)
3500
0
2800
2900
3000
3100
3200
3300 3400
f (MHz)
3500
t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; V
DS
= 32 V;
T
amb
= 25
C;
P
L
= 400 W.
t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; V
DS
= 32 V;
T
amb
= 25
C;
P
L
= 400 W.
Fig 7.
Power gain as a function of frequency; typical
values
Fig 8.
Input return loss as a function of frequency;
typical values
BPS9G2934X-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 November 2017
5 of 10
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