Preliminary
Datasheet
RJP60F5DPM
600V - 40A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.37 V typ. (I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
t
f
= 85 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0587EJ0200
Rev.2.00
May 31, 2012
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
P
C
j-c
Tj
Tstg
Ratings
600
±30
80
40
160
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0587EJ0200 Rev.2.00
May 31, 2012
Page 1 of 6
RJP60F5DPM
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
Min
4
—
—
—
Typ
1.37
1.7
2780
100
43
74
24
26
53
77
90
85
Max
100
±1
8
1.8
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 40 A, V
GE
= 15 V
Note2
I
C
= 80 A, V
GE
= 15 V
Note2
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
V
GE
= 15 V
V
CC
= 300 V
I
C
= 40 A
I
C
= 30 A
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note2
Inductive load
Notes: 2. Pulse test
R07DS0587EJ0200 Rev.2.00
May 31, 2012
Page 2 of 6
RJP60F5DPM
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
160
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
120
11 V
13 V
15 V
80
9V
9.5 V
10.5 V
10 V
Collector Current I
C
(A)
100
10
PW
μ
s
10
1
Collector Current I
C
(A)
=
10
0
μ
s
0.1
Tc = 25°C
Single pulse
40
8.5 V
V
GE
= 8 V
0.01
1
0
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
160
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3.0
Ta = 25
°
C
Pulse Test
2.6
I
C
= 20 A
40 A
80 A
Collector Current I
C
(A)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
120
2.2
80
Tc = 75°C
40
25°C
0
2
–25°C
1.8
1.4
1.0
6
8
10
12
14
16
18
20
4
6
8
10
12
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
−25
40 A
V
GE
= 15 V
Pulse Test
I
C
= 80 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
V
CE
= 10 V
Pulse Test
8
I
C
= 10 mA
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
6
1 mA
4
20 A
2
0
25
50
75
100 125 150
0
−25
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0587EJ0200 Rev.2.00
May 31, 2012
Page 3 of 6
RJP60F5DPM
Typical Capacitance vs.
Collector to Emitter Voltage
10000
Cies
Preliminary
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
V
GE
V
CE
V
CC
= 300 V
600 V
1000
600
12
100
Coes
400
8
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
Cres
200
V
CC
= 600 V
300 V
I
C
= 40 A
Ta = 25
°
C
4
1
0
250
300
0
20
40
60
80
0
100
Collector to Emitter Voltage V
CE
(V)
Gate Charge Qg (nc)
Switching Characteristics (Typical) (1)
1000
Switching Characteristics (Typical) (2)
10
tf
100
td(off)
td(on)
tr
10
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
tr includes the diode recovery
1
10
100
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1
Eoff
Eon
0.1
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
Eon includes the diode recovery
0.01
1
10
100
1
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
1
Eoff
Eon
10
25
50
75
100
125
150
0.1
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0587EJ0200 Rev.2.00
May 31, 2012
Page 4 of 6
Gate to Emitter Voltage V
GE
(V)
800
16
Capacitance C (pF)
RJP60F5DPM
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
θj −
c(t) =
γs
(t) •
θj −
c
θj −
c = 2.78 °C/W, Tc = 25 °C
P
DM
1 shot pulse
0.1
0.05
0.02
D=
PW
T
PW
T
0.01
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
10
Pulse Width
PW (s)
Switching Time Test Circuit
Waveform
90%
V
GE
RJU60C3TDPP
10%
90%
90%
L
V
CC
I
C
D.U.T
10%
t
d(on)
t
on
t
r
10%
1%
t
d(off)
t
f
t
tail
t
off
Rg
V
CE
10%
R07DS0587EJ0200 Rev.2.00
May 31, 2012
Page 5 of 6
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