Preliminary
Datasheet
RJH60F3DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.4 V typ. (I
C
= 20 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 92 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0199EJ0200
Rev.2.00
Dec 01, 2010
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-c
Tj
Tstg
Ratings
600
±30
40
20
80
80
178.5
0.7
2.0
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 1 of 7
RJH60F3DPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
V
ECF2
t
rr
Min
—
—
4
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.4
1.6
1260
73
21
44
96
65
92
1.6
1.8
140
Max
100
±1
8
1.82
—
—
—
—
—
—
—
—
2.1
—
—
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 20 A, V
GE
= 15 V
Note3
I
C
= 40 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
I
C
= 20 A, Resistive Load
V
CC
= 300 V
V
GE
= 15 V
Note3
Rg = 5
I
F
= 20 A
Note3
I
F
= 40 A
Note3
I
F
= 20 A
di
F
/dt = 100 A/s
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 2 of 7
RJH60F3DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
80
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
60
12 V
15 V
9.5 V
10.5 V
11 V
10 V
Collector Current I
C
(A)
100
10
0
μ
s
PW
=1
0
μ
s
10
Collector Current I
C
(A)
40
1
0.1
Tc = 25°C
Single pulse
20
9V
V
GE
= 8.5 V
0.01
1
0
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
80
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3.4
3.0
2.6
2.2
1.8
1.4
1.0
8
10
12
14
16
18
20
I
C
= 40 A
20 A
15 A
Ta = 25
°
C
Pulse Test
Collector Current I
C
(A)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
60
40
Tc = 75°C
25°C
20
–25°C
0
2
4
6
8
10
12
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.2
V
GE
= 15 V
Pulse Test
I
C
= 40 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
I
C
= 10 mA
2.0
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
8
1.8
6
1 mA
4
1.6
20 A
15 A
1.4
1.2
−25
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 3 of 7
RJH60F3DPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
Cies
1000
Forward Current vs. Forward Voltage (Typical)
100
Forward Current I
F
(A)
60
Capacitance C (pF)
80
100
Coes
10
V
GE
= 0 V
f = 1 MHz Ta = 25
°
C
1
Cres
40
20
0
0
1
2
3
4
5
0
50
100
150
200
250
300
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
V
CE
V
CC
= 600 V
300 V
V
GE
I
C
= 20 A
Ta = 25
°
C
16
1000
Switching Characteristics (Typical) (1)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C, Resistive Load
tf
100
td(off)
600
12
400
8
Switching Time t (ns)
10
td(on)
tr
200
V
CC
= 600 V
300 V
0
0
12
24
32
48
4
0
60
1
1
10
100
Gate Charge Qg (nc)
Collector Current I
C
(A)
Switching Characteristics (Typical) (2)
1000
I
C
= 20 A, V
GE
= 15 V
R
L
= 15
Ω,
Ta = 25
°
C
Resistive Load
Switching Characteristics (Typical) (3)
1000
I
C
= 20 A, V
GE
= 15 V
R
L
= 15
Ω,
Rg = 5
Ω
Resistive Load
Switching Time t (ns)
Switching Time t (ns)
100
tf
td(off)
tf
100
td(off)
tr
td(on)
10
tr
10
1
td(on)
10
100
0
25
50
75
100
125
150
Gate Resistance Rg (Ω)
Case Temperature Tc (°C)
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 4 of 7
RJH60F3DPK
Switching Characteristics (Typical) (1)
1000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
10000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
Eon includes the diode recovery
1000
Eoff
100
Eon
10
10
1
10
100
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
Switching Times t (ns)
200
160
120
80
40
0
0
Swithing Energy Losses E (μJ)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
1200
Eoff
800
Eon
tr
tf
td(off)
td(on)
25
50
75
100
125
150
400
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
0
25
50
75
100
125
150
0
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 5 of 7
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
