NCP302035
Integrated Driver
and MOSFET
Description
The NCP302035 integrates a MOSFET driver, high-side MOSFET
and low-side MOSFET into a single package.
The driver and MOSFETs have been optimized for high-current
DC−DC buck power conversion applications. The NCP302035
integrated solution greatly reduces package parasitics and board space
compared to a discrete component solution.
Features
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Capable of Average Currents up to 35 A
Capable of Switching at Frequencies up to 2 MHz
Capable of Peak Currents up to 70 A
Compatible with 3.3 V or 5 V PWM Input
Responds Properly to 3-level PWM Inputs
Option for Zero Cross Detection with 3-level PWM
Internal Bootstrap Diode
Undervoltage Lockout
Supports Intel
®
Power State 4
Thermal Warning output
Thermal Shutdown
PQFN31 5x5, 0.5P
Case 483BR
MARKING DIAGRAM
ON
302035
AZZYYWW
A
ZZ
YY
WW
= Assembly Location
= Wafer Lot
= Year
= Work Week
Applications
SMOD#
2
PHASE
•
Desktop & Notebook Microprocessors
VIN
PINOUT DIAGRAM
CGND
BOOT
5V
VIN
VIN
9
10
8
7
6
5
4
3
PWM
1
31
30
VCC
nc
THWN
DISB#
VCCD
PGND
GL
VSW
VSW
VSW
PWM from Controller
SMOD from Controller
PWM
12
33
SMOD#
CGND
PGND
GL
VSW
PGND
VOUT
PGND
PGND
PGND
25
16
17
18
19
20
21
22
23
26
13
14
Figure 1. Application Schematic
VSW
VSW
VSW
VSW
VSW
VSW
ORDERING INFORMATION
Device
NCP302035MNTWG
Package
PQFN31
(Pb−Free)
Shipping
†
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2017
1
September, 2017 − Rev. 1
Publication Order Number:
NCP302035/D
VSW
24
27
28
15
DRVON from Controller
VCCD VCC VIN
THWN
BOOT
DISB#
VIN
VIN
32
AGND
29
11
NCP302035
VCCD 29
5
BOOT
VCC
3
VCC
UVLO
8−11
LEVEL
SHIFT
16−26
VIN
VSW
SMOD#
PWM
2
1
DEAD
TIME
CONTROL
7
SHUTDOWN
TEMP
WARNING SENSE
LEVEL
SHIFT
PHASE
DISB# 30
28 PGND
THWN 31
12−15
PGND
27 GL
AGND 32
CGND
4
ZCD
CONTROL
33 GL
Figure 2. Block Diagram
Table 1. PIN LIST AND DESCRIPTIONS
Pin No.
1
2
Symbol
PWM
SMOD#
Description
PWM Control Input and Zero Current Detection Enable
Skip Mode pin. 3-state input (see Table 1 LOGIC TABLE):
SMOD# = High
³
State of PWM determine whether the NCP302035 performs ZCD or not.
SMOD# = Mid
³
Connects PWM to internal resistor divider placing a bias voltage on PWM pin.
Otherwise, logic is equivalent to SMOD# in the high state.
SMOD# = Low
³
Placing PWM into mid-state pulls GH and GL low without delay.
There is an internal pull-up resistor to VCC on this pin.
Control Power Supply Input
Signal Ground (pin 4 and pad 32 are internally connected)
Bootstrap Voltage
Open pin (not used)
Bootstrap Capacitor Return
Conversion Supply Power Input
Power Ground
Switch Node Output
Low Side FET Gate Access (pin 27 and pad 33 are internally connected)
Driver Power Supply Input
Output disable pin. When this pin is pulled to a logic high level, the driver is enabled. There is an
internal pull-down resistor on this pin.
Thermal warning indicator. This is an open-drain output. When the temperature at the driver die
reaches T
THWN
, this pin is pulled low.
3
4, 32
5
6
7
8−11
12−15, 28
16−26
27, 33
29
30
31
VCC
CGND, AGND
BOOT
nc
PHASE
VIN
PGND
VSW
GL
VCCD
DISB#
THWN
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NCP302035
Table 2. ABSOLUTE MAXIMUM RATINGS
(Electrical Information − all signals referenced to PGND unless noted otherwise)
Pin Name/Parameter
VCC, VCCD
VIN
BOOT (DC)
BOOT (< 20 ns)
BOOT to PHASE (DC)
VSW, PHASE (DC)
VSW, PHASE (< 5 ns)
All Other Pins
Min
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−5
−0.3
Max
6.5
30
35
40
6.5
30
37
V
VCC
+ 0.3
Unit
V
V
V
V
V
V
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. THERMAL INFORMATION
Rating
Thermal Resistance (under ON Semiconductor SPS Thermal Board)
Symbol
q
JA
q
J−PCB
Operating Junction Temperature Range (Note 1)
Operating Ambient Temperature Range
Maximum Storage Temperature Range
Maximum Power Dissipation
Moisture Sensitivity Level
1. The maximum package power dissipation must be observed.
2. JESD 51−5 (1S2P Direct-Attach Method) with 0 LFM
3. JESD 51−7 (1S2P Direct-Attach Method) with 0 LFM
MSL
T
J
T
A
T
STG
Value
12.4
1.8
−40 to +150
−40 to +125
−55 to +150
8.5
1
Unit
°C/W
°C/W
°C
°C
°C
W
Table 4. RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage Range
Conversion Voltage
Continuous Output Current
Pin Name
VCC, VCCD
VIN
F
SW
= 1 MHz, V
IN
= 12 V, V
OUT
= 1.0 V, T
A
= 25°C
F
SW
= 300 kHz, V
IN
= 12 V, V
OUT
= 1.0 V, T
A
= 25°C
Peak Output Current
Junction Temperature
F
SW
= 500 kHz, V
IN
= 12 V, V
OUT
= 1.0 V,
Duration = 10 ms, Period = 1 s, T
A
= 25°C
Conditions
Min
4.5
4.5
−
−
−
Typ
5.0
12
−
−
−
−
Max
5.5
20
30
35
70
125
Unit
V
V
A
A
A
°C
−40
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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NCP302035
Table 5. ELECTRICAL CHARACTERISTICS
(V
VCC
= V
VCCD
= 5.0 V, V
VIN
= 12 V, V
DISB#
= 2.0 V, C
VCCD
= C
VCC
= 0.1
mF
unless specified otherwise) Min/Max values are valid for the
temperature range −40°C
≤
T
J
≤
125°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.
Parameter
VCC SUPPLY CURRENT
Operating
No switching
Disabled
DISB# = 5 V, PWM = 400 kHz
DISB# = 5 V, PWM = 0 V
DISB# = 0 V, SMOD# = VCC
DISB# = 0 V, SMOD# = GND
UVLO Start Threshold
UVLO Hysteresis
VCCD SUPPLY CURRENT
Enabled, No Switching
Disabled
Operating
DISB# INPUT
Input Resistance
Upper Threshold
Lower Threshold
Hysteresis
Enable Delay Time
Disable Delay Time
SMOD# INPUT
SMOD# Input Voltage High
SMOD# Input Voltage Mid-state
SMOD# Input Voltage Low
SMOD# Input Resistance
SMOD# Propagation Delay, Falling
V
SMOD_HI
V
SMOD#_MID
V
SMOD_LO
R
SMOD#_UP
T
SMOD#_PD_F
Pull-up resistance to VCC
PWM = High-to-Low,
SMOD# = Low to GL = 90%
PWM = High-to-Low,
SMOD# = High to GL = 10%,
2.65
1.4
−
−
−
−
−
−
455
34
−
2.0
0.7
−
40
V
V
V
kW
ns
V
UPPER
V
LOWER
V
UPPER
– V
LOWER
Time from DISB# transitioning HI to
when VSW responds to PWM.
Time from DISB# transitioning LOW to
when both output FETs are off.
To Ground
−
−
0.8
200
−
−
467
−
−
−
−
21
−
2.0
−
−
40
50
kW
V
V
mV
ms
ns
DISB# = 5 V, PWM = 0 V, V
PHASED
= 0 V
DISB# = 0 V
DISB# = 5 V, PWM = 400 kHz
−
−
−
175
0.4
−
300
1
20
mA
mA
mA
V
UVLO
VCC Rising
−
−
−
−
2.9
150
1
−
0.4
6
−
−
2
2
1
13
3.3
−
mA
mA
mA
mA
V
mV
Symbol
Conditions
Min
Typ
Max
Unit
SMOD# Propagation Delay, Rising
PWM INPUT
Input High Voltage
Input Mid-state Voltage
Input Low Voltage
Input Resistance
T
SMOD#_PD_R
−
22
30
ns
V
PWM_HI
V
PWM_MID
V
PWM_LO
R
PWM_HIZ
SMOD# = V
SMOD#_HI
or V
SMOD#_LO
2.65
1.4
−
10
−
−
−
−
−
2.0
0.7
−
V
V
V
MW
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per-
formance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NCP302035
Table 5. ELECTRICAL CHARACTERISTICS
(continued)
(V
VCC
= V
VCCD
= 5.0 V, V
VIN
= 12 V, V
DISB#
= 2.0 V, C
VCCD
= C
VCC
= 0.1
mF
unless specified otherwise) Min/Max values are valid for the
temperature range −40°C
≤
T
J
≤
125°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.
Parameter
PWM INPUT
Input Resistance
PWM Input Bias Voltage
Non-overlap Delay, Leading Edge
Non-overlap Delay, Trailing Edge
PWM Propagation Delay, Rising
PWM Propagation Delay, Falling
Exiting PWM Mid-state Propagation
Delay, Mid-to-Low
Exiting PWM Mid-state Propagation
Delay, Mid-to-High
ZCD FUNCTION
Zero Cross Detect Threshold
ZCD Blanking + Debounce Time
THERMAL WARNING & SHUTDOWN
Thermal Warning Temperature
Thermal Warning Hysteresis
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
THWN Open Drain Current
BOOSTSTRAP DIODE
Forward Voltage
HIGH-SIDE DRIVER
Output Impedance, Sourcing
Output Sourcing Peak Current
Output Impedance, Sinking
Output Sinking Peak Current
LOW-SIDE DRIVER
Output Impedance, Sourcing
Output Sourcing Peak Current
Output Impedance, Sinking
Output Sinking Peak Current
GL Rise Time
GL Fall Time
R
SOURCE_GL
I
SOURCE_GL
R
SINK_GH
I
SINK_GL
T
R_GL
T
F_GL
Source Current = 100 mA
GL = 2.5 V
Sink Current = 100 mA
GL = 2.5 V
GL = 10% to 90%, C
LOAD
= 3.0 nF
GL = 90% to 10%, C
LOAD
= 3.0 nF
−
−
−
−
−
−
0.9
2
0.4
4.5
12
6
−
−
−
−
−
−
W
A
W
A
ns
ns
R
SOURCE_GH
I
SOURCE_GH
R
SINK_GH
I
SINK_GH
Source Current = 100 mA
Source Current = 100 mA
−
−
−
−
0.9
2
0.7
2.5
−
−
−
−
W
A
W
A
Forward Bias Current = 2.0 mA
−
380
−
mV
T
THWN
T
THWN_HYS
T
THDN
T
THDN_HYS
I
THWN
Temperature at Driver Die
Temperature at Driver Die
−
−
−
−
−
150
15
180
25
−
−
−
−
−
5
_C
_C
_C
_C
mA
V
ZCD
t
BLNK
−
−
−6
330
−
−
mV
ns
R
PWM_BIAS
V
PWM_BIAS
T
NOL_L
T
NOL_T
T
PWM,PD_R
T
PWM,PD_F
T
PWM_EXIT_L
T
PWM_EXIT_H
SMOD# = V
SMOD#_MID
SMOD# = V
SMOD#_MID
GL Falling = 1 V to
GH−VSW Rising = 1 V
GH−VSW Falling = 1 V to
GL Rising = 1 V
PWM = High to GL = 90%
PWM = Low to VSW = 90%
PWM = Mid-to-Low to GL = 10%
PWM = Mid-to-High to VSW = 10%
−
−
−
−
−
−
−
−
68
1.7
13
12
13
47
14
13
−
−
−
−
35
52
25
25
kW
V
ns
ns
ns
ns
ns
ns
Symbol
Conditions
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per-
formance may not be indicated by the Electrical Characteristics if operated under different conditions.
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