TSB772CK
Taiwan Semiconductor
Low V
CESAT
PNP Transistor
FEATURES
●
●
●
●
●
Low V
CE(SAT)
-0.3 @ I
C
=-2A, I
B
= -200mA (Typ.)
Complementary part with TSD882
Epitaxial Planar Type
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
BV
CEO
BV
CBO
I
C
V
CE(SAT)
I
C
= -2A, I
B
= -200mA
VALUE
-30
-50
-3
-0.5
UNIT
V
V
A
V
APPLICATION
●
●
Power Supply
Low Speed Switching Applications
TO-126
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
T
A
= 25 C
T
C
= 25 C
o
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
LIMIT
-50
-30
-5
-3
-7 (note)
1
10
+150
- 55 to +150
UNIT
V
V
V
A
Collector Power Dissipation
Operating Junction Temperature
W
o
o
C
C
Operating Junction and Storage Temperature Range
Note:
Single pulse, Pw≤350
µ
s, Duty≤2%
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
SYMBOL
R
ӨJC
LIMIT
6.25
UNIT
o
C/W
1
Version: G1609
TSB772CK
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Collector Cutoff Current
CONDITIONS
I
C
= -50µA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50µA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -33V, I
C
= 0
I
C
= -2A, I
B
= -200mA
I
C
= -2A, I
B
= -200mA
V
CE
= -2V, I
C
= -1A
V
CE
=-5V, I
C
=-100mA,
f=100MHz
V
CB
= -10V, f=1MHz
V
CB
= -30V, I
E
= 0
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(SAT)
*V
BE(SAT)
*h
FE
f
T
Cob
I
CBO
MIN
-50
-30
-5
--
--
--
--
100
--
--
--
TYP
--
--
--
--
--
-0.3
-1
--
80
55
--
MAX
--
--
--
-1
-1
-0.5
-2
500
--
--
-1
MHz
pF
µA
UNIT
V
V
V
µA
µA
V
V
* Pulse Test: Pulse Width ≤380
µ
S, Duty Cycle≤2%
ORDERING INFORMATION
PART NO.
TSB772CK B0G
TSB772CK C0G
PACKAGE
TO-126
TO-126
PACKING
250pcs / Bulk Bag
50pcs / Tube
2
Version: G1609
TSB772CK
Taiwan Semiconductor
ELECTRICAL CHARACTERICS CURVES
(T
A
=25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
vs. Collector Current
Figure 3. V
BE(SAT)
vs. Collector Current
Figure 4. Power Derating Curve
3
Version: G1609
TSB772CK
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit: Millimeters)
TO-126
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
4
Version: G1609
TSB772CK
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version: G1609
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