TSC5304ED
High Voltage NPN Transistor with Diode
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
400V
700V
4A
0.25V (Typ.) @ I
C
=0.5A, I
B
=0.1A
Features
●
●
●
Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
Low Base Drive Requirement
Suitable for Half Bridge Light Ballast Application
Block Diagram
Structure
●
●
●
Silicon Triple Diffused Type
NPN Silicon Transistor
Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
TSC5304EDCP ROG
TSC5304EDCH C5G
Package
TO-252
TO-251
Packing
2.5Kpcs / 13” Reel
75pcs / Tube
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage @ V
BE
=0V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
DTOT
T
J
T
STG
Limit
700
700
400
9
4
8
2
4
35
+150
-55 to +150
Unit
V
V
V
V
A
A
A
A
W
o
o
C
C
1/6
Version: E11
TSC5304ED
High Voltage NPN Transistor with Diode
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨ
JC
RӨ
JA
Limit
3.57
68
Unit
o
o
C/W
C/W
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
=1mA, I
B
=0
I
C
=10mA, I
E
=0
I
E
=1mA, I
C
=0
V
CB
=700V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=7V, I
C
=0
I
C
=0.5A, I
B
=0.1A
Collector-Emitter Saturation Voltage
I
C
=1A, I
B
=0.2A
I
C
=2.5A, I
B
=0.5A
I
C
=4A, I
B
=1A
Base-Emitter Saturation Voltage
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CE
=5V, I
C
=10mA
DC Current Gain
Forward Voltage Drop
Turn On Time
Storage Time
Fall Time
Turn On Time
Storage Time
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
I
F
=2A
V
CC
=250V, I
C
=1A,
I
B1
=I
B2
=0.2A, t
p
=25uS
Duty Cycle<1%
V
CC
=5V, I
C
=0.1A,
I
B1
=I
B2
=0.02A, t
p
=25uS
Vf
t
ON
t
STG
t
f
t
ON
t
STG
t
f
Hfe
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
CE(SAT)3
V
CE(SAT)4
V
BE(SAT)1
V
BE(SAT)2
700
400
9
--
--
--
--
--
--
--
--
--
10
17
12
--
--
--
--
--
6.5
--
--
--
--
--
--
--
0.25
0.5
1.2
0.5
--
--
--
--
--
--
0.2
3.0
0.2
0.35
--
0.3
--
--
--
100
250
10
0.7
1
1.5
--
1.1
1.2
--
37
32
2
0.6
4.5
0.3
0.6
8.5
0.6
V
uS
uS
uS
uS
uS
uS
V
V
V
V
V
uA
uA
uA
Conditions
Symbol
Min
Typ
Max
Unit
Duty Cycle<1%
Fall Time
Notes:
Pulsed duration =380uS, duty cycle
≤2%
2/6
Version: E11
TSC5304ED
High Voltage NPN Transistor with Diode
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Vce(sat) v.s. Vbe(sat)
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
3/6
Version: E11
TSC5304ED
High Voltage NPN Transistor with Diode
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
4/6
Version: E11
TSC5304ED
High Voltage NPN Transistor with Diode
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: E11
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