NL17SG17
Schmitt Buffer
The NL17SG17 MiniGatet is an advanced high−speed CMOS
Schmitt Buffer in ultra−small footprint.
The NL17SG17 input structures provides protection when voltages
up to 4.6 V are applied.
Features
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MARKING
DIAGRAMS
SOT−953
CASE 527AE
1
A
= Specific Device Code
(A with 90 degree clockwise rotation)
UDFN6
1.0 x 1.0
CASE 517BX
UDFN6
1.45 x 1.0
CASE 517AQ
4
OUT Y
SC−88A
DF SUFFIX
CASE 419A
M
G
NC
1
6
V
CC
= Date Code*
= Pb−Free Package
AN M
G
G
M
•
•
•
•
•
•
Wide Operating V
CC
Range: 0.9 V to 3.6 V
High Speed: t
PD
= 3.7 ns (Typ) at V
CC
= 3.0 V, C
L
= 15 pF
Low Power Dissipation: I
CC
= 0.5
mA
(Max) at T
A
= 25°C
4.6 V Overvoltage Tolerant (OVT) Input Pins
Ultra−Small Packages
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
IN A
1
5
V
CC
NC
1
5
V
CC
GND
2
IN A
2
NC
3
4
OUT Y
GND
3
Figure 1. SOT−953
(Top Thru View)
Figure 2. SC−88A
(Top View)
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
IN A
2
5
NC
PIN ASSIGNMENT
GND
3
4
OUT Y
1
SOT−953
IN A
GND
NC
OUT Y
V
CC
SC−88A
NC
IN A
GND
OUT Y
V
CC
UDFN6
NC
IN A
GND
OUT Y
NC
V
CC
Figure 3. UDFN6
(Top View)
2
3
4
5
IN A
OUT Y
6
Figure 4. Logic Symbol
FUNCTION TABLE
A Input
L
H
Y Output
L
H
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 6
Publication Order Number:
NL17SG17/D
T
5
A
M
M
M
NL17SG17
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Output at High or Low State
Power−Down Mode (V
CC
= 0 V)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5 to +5.5
−0.5 to +4.6
−0.5 to V
CC
+ 0.5
−0.5 to +4.6
−20
−20
±20
±20
±20
−65 to +150
260
+150
Level 1
UL 94 V−0 @ 0.125 in
>2000
>100
V
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt
/
DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Temperature Range
Input Transition Rise or Fail Rate
Output at High or Low State
Power−Down Mode (V
CC
= 0 V)
Characteristics
Min
0.9
0.0
0.0
0.0
−55
0
Max
3.6
3.6
V
CC
3.6
+125
No Limit
Unit
V
V
V
°C
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NL17SG17
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
0.9
1.1
1.4
1.65
2.3
3.0
V
T−
Negative−Go-
ing
Input Threshold
Voltage
0.9
1.1
1.4
1.65
2.3
3.0
V
H
Hysteresis Volt-
age
0.9
1.1
1.4
1.65
2.3
3.0
V
OH
High−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OH
= −20
mA
I
OH
= −0.3 mA
I
OH
= −1.7 mA
I
OH
= −3.0 mA
I
OH
= −4.0 mA
I
OH
= −8.0 mA
V
OL
Low−Level Out-
put Voltage
V
IN
=
V
IH
or
V
IL
I
OL
= 20
mA
I
OL
= 0.3 mA
I
OL
= 1.7 mA
I
OL
= 3.0 mA
I
OL
= 4.0 mA
I
OL
= 8.0 mA
I
IN
I
CC
Input Leakage
Current
Quiescent Sup-
ply Current
0
≤
V
IN
≤
3.6 V
V
IN
= V
CC
or GND
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0 to 3.6
3.6
T
A
= 255C
Min
0.64
0.73
0.86
0.95
1.22
1.51
0.09
0.15
0.3
0.35
0.55
0.95
0.15
0.15
0.15
0.15
0.15
0.25
0.75
0.75 x
V
CC
0.75 x
V
CC
V
CC
−
0.45
2.0
2.48
0.1
0.25 x
V
CC
0.25xV
CC
−555C
3
T
A
3
1255C
Max
0.86
0.95
1.16
1.25
1.6
2.05
0.30
0.39
0.54
0.65
0.88
1.16
0.75
0.75
0.75
0.75
0.75
0.85
Min
0.62
0.71
0.84
0.94
1.18
1.38
0.08
0.12
0.25
0.3
0.5
0.9
0.2
0.2
0.2
0.2
0.2
0.3
0.75
0.75 x
V
CC
0.75 x
V
CC
V
CC
−
0.45
2.0
2.48
0.1
0.25 x
V
CC
0.25 x
V
CC
0.45
0.4
0.4
±1.0
10.0
mA
mA
V
Max
0.87
1
1.2
V
1.3
1.65
2.1
0.33
0.43
0.55
0.65
0.88
1.16
0.8
0.8
0.8
0.8
0.8
0.9
V
V
V
Unit
Symbol
V
T+
Parameter
Positive−Going
Input Threshold
Voltage
Condition
Typ
0.7
0.81
0.94
1.06
1.36
1.8
0.23
0.33
0.47
0.6
0.85
1.13
0.5
0.5
0.5
0.5
0.5
0.65
0.45
0.4
0.4
±0.1
0.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NL17SG17
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
T
A
= 25
5C
Typ
T
A
=
−555C to +1255C
Min
−
1.0
1.0
1.0
1.0
1.0
−
1.0
1.0
1.0
1.0
1.0
−
1.0
1.0
1.0
1.0
1.0
−
−
−
Max
−
35.9
11.3
8.2
5.8
4.6
−
41.8
12.6
8.7
6.1
5.0
−
58.1
17.6
11.7
8.1
6.1
−
−
−
pF
pF
pF
ns
ns
Symbol
t
PLH
,
t
PHL
Parameter
Test Condition
C
L
= 10 pF,
R
L
= 1 MW
V
CC
(V)
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 15 pF,
R
L
= 1 MW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 30 pF,
R
L
= 1 MW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
IN
C
O
C
PD
Input Capacitance
Output Capacitance
Power Dissipation
Capacitance (Note 5)
V
O
= GND
f = 10 MHz
0 to 3.6
0
0.9 to 3.6
−
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−
22.6
10.5
7.8
5.4
4.4
−
25.1
11.5
8.4
5.7
4.6
−
35.7
15.8
10.7
6.9
5.2
−
−
−
Unit
ns
Propagation Delay,
A to Y
27.3
13.0
7.5
6.0
4.3
3.5
29.5
14.3
8.0
6.3
4.6
3.7
40.5
19.6
10.7
7.8
5.4
4.3
3
3
4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
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4
NL17SG17
V
CC
Input A
50%
t
PLH
Output Y
50%
GND
t
PHL
V
OH
50% V
CC
V
OL
Figure 5. Switching Waveform
V
CC
PULSE
GENERATOR
R
T
DUT
C
L
R
L
R
T
= Z
OUT
of pulse generator (typically 50
W)
Figure 6. Test Circuit
ORDERING INFORMATION
Device
NL17SG17P5T5G
NL17SG17DFT2G
NL17SG17AMUTCG
NL17SG17CMUTCG*
Package
SOT−953
(Pb−Free)
SC−88A
(Pb−Free)
UDFN6 1.45x1 mm
(Pb−Free)
UDFN6 1x1 mm
(Pb−Free)
Shipping
†
8000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*In Development
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5
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