EMT1DXV6
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
(3)
http://onsemi.com
(2)
(1)
•
Lead−Free Solder Plating
•
Low V
CE(SAT)
,
t0.5
V
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Q
1
Q
2
(4)
(5)
(6)
6
1
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
3T M
G
G
1
3T = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
R
qJA
T
J
, T
stg
R
qJA
Symbol
P
D
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to +150
Max
Unit
mW
mW/°C
°C/W
Symbol
P
D
Unit
mW
mW/°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 2
Publication Order Number:
EMT1DXV6T1/D
EMT1DXV6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Collector−Base Breakdown Voltage
(I
C
= −50
mAdc,
I
E
= 0)
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
Emitter−Base Breakdown Voltage
(I
E
= −50
mAdc,
I
E
= 0)
Collector−Base Cutoff Current
(V
CB
= −30 Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
= −5.0 Vdc, I
B
= 0)
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
DC Current Gain (Note 2)
(V
CE
= −6.0 Vdc, I
C
= −1.0 mAdc)
Transition Frequency
(V
CE
= −12 Vdc, I
C
= −2.0 mAdc, f = 30 MHz)
Output Capacitance
(V
CB
= −12 Vdc, I
E
= 0 Adc, f = 1 MHz)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
−
h
FE
120
f
T
−
C
OB
−
140
3.5
−
−
pF
−
560
MHz
−
−0.5
−
Min
−60
−50
−6.0
−
−
Typ
−
−
−
−
−
Max
−
−
−
−0.5
−0.5
Unit
Vdc
Vdc
Vdc
nA
mA
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
ORDERING INFORMATION
Device
EMT1DXV6T1G
NSVEMT1DXV6T1G*
EMT1DXV6T5G
NSVEMT1DXV6T5G*
Package
SOT−563
(Pb−Free)
SOT−563
(Pb−Free)
SOT−563
(Pb−Free)
SOT−563
(Pb−Free)
Shipping
†
4000 / Tape & Reel
4000 / Tape & Reel
8000 / Tape & Reel
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
2
EMT1DXV6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
A
L
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
6
5
1
2
3
E
−Y−
H
E
DIM
A
b
C
D
E
e
L
H
E
b
e
5
6 PL
M
C
X Y
0.08 (0.003)
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
1.35
0.0531
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
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Email:
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USA/Canada
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Order Literature:
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For additional information, please contact your local
Sales Representative
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4
EMT1DXV6T1/D