SMBJ SERIES
Taiwan Semiconductor
600W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
●
●
●
●
Low profile package
Ideal for automated placement
Glass passivated junction
Built-in strain relief
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Typical I
R
less than 1μA above 10V
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
(uni - directional)
V
BR
(bi - directional)
P
PPSM
T
J MAX
Package
Configuration
VALUE
2
5 - 170
5 - 170
600
150
UNIT
V
V
V
W
°C
DO-214AA (SMB)
Single Die
APPLICATIONS
● Switching mode power supply (SMPS)
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
(1)
10/1000us waveform
Steady state power dissipation at
Forward Voltage @ I
F
=50A for Uni-directional only
Junction temperature
(2)
SYMBOL
P
PPSM
P
tot
V
F
T
J
Part Number
600
3
3.5 / 5.0
- 55 to +150
UNIT
W
W
V
°C
°C
Storage temperature
T
STG
- 55 to +150
Notes:
1.
Non-repetitive Current Pulse Per Fig. 3 and derated above T
A
=25°C Per Fig. 2
2.
V
F
=3.5V on SMBJ5.0 - SMBJ90 Devices and V
F
=5.0V on SMBJ100 - SMBJ170 Devices
Devices for Bipolar Applications
1.
For Bidirectional Use C or CA Suffix for Types SMBJ5.0 - Types SMBJ170
2.
Electrical Characteristics Apply in Both Directions
1
Version:O1701
SMBJ SERIES
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
10
55
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown voltage
V
BR
@I
T
(V)
(Note 1)
Working
stand-off
voltage
V
WM
(V)
Maximum
blocking
leakage
current
I
IB
@V
WM
(µA)
Maximum
peak
impulse
current
I
PP
(A)
(Note 2)
Maximum
clamping
voltage
V
C
@I
PP
(V)
Part number
Marking code
Test current
I
T
(mA)
SMBJ5.0
SMBJ5.0A
SMBJ6.0
SMBJ6.0A
SMBJ6.5
SMBJ6.5A
SMBJ7.0
SMBJ7.0A
SMBJ7.5
SMBJ7.5A
SMBJ8.0
SMBJ8.0A
SMBJ8.5
SMBJ8.5A
SMBJ9.0
SMBJ9.0A
SMBJ10
SMBJ10A
SMBJ11
SMBJ11A
SMBJ12
SMBJ12A
SMBJ13
SMBJ13A
SMBJ14
SMBJ14A
SMBJ15
SMBJ15A
SMBJ16
SMBJ16A
SMBJ17
SMBJ17A
SMBJ18
SMBJ18A
SMBJ20
SMBJ20A
SMBJ22
SMBJ22A
SMBJ24
SMBJ24A
SMBJ26
SMBJ26A
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
LF
LG
LH
LK
LL
LM
LN
LP
LQ
LR
LS
LT
LU
LV
LW
LX
LY
LZ
MD
ME
Min.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
Max.
7.30
7.00
8.15
7.37
8.82
7.98
9.51
8.60
10.3
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
65.0
68.0
55.0
61.0
51.0
56.0
47.0
52.0
44.0
48.0
42.0
46.0
39.0
43.0
37.0
40.0
33.0
37.0
31.0
34.0
28.0
31.0
26.0
29.0
24.4
27.0
23.1
25.1
21.8
24.2
20.0
22.8
19.5
21.5
17.6
19.4
15.0
17.7
14.6
16.0
13.5
14.9
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
Version:O1701
SMBJ SERIES
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown voltage
V
BR
@I
T
(V)
Part number Marking code
(Note 1)
Min.
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
Max.
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
Test
current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
3
Working
stand-off
voltage
V
WM
(V)
28
28
30
30
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
Maximum
blocking
leakage
current
I
IB
@V
WM
(µA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
peak
Maximum
impulse clamping
current
voltage
I
PP
V
C
@I
PP
(A)
(V)
(Note 2)
12.6
13.8
11.7
13.0
10.6
11.8
9.8
10.8
8.8
9.7
8.2
9.0
7.8
8.6
7.3
8.1
6.9
7.6
6.5
7.2
6.1
6.7
5.8
6.5
5.5
6.1
5.0
5.5
4.7
5.2
4.5
5.0
4.1
4.6
3.9
4.3
3.5
3.8
3.2
3.5
2.9
3.2
2.7
3.0
2.3
2.5
2.2
2.4
2.0
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
Version:O1701
SMBJ28
SMBJ28A
SMBJ30
SMBJ30A
SMBJ33
SMBJ33A
SMBJ36
SMBJ36A
SMBJ40
SMBJ40A
SMBJ43
SMBJ43A
SMBJ45
SMBJ45A
SMBJ48
SMBJ48A
SMBJ51
SMBJ51A
SMBJ54
SMBJ54A
SMBJ58
SMBJ58A
SMBJ60
SMBJ60A
SMBJ64
SMBJ64A
SMBJ70
SMBJ70A
SMBJ75
SMBJ75A
SMBJ78
SMBJ78A
SMBJ85
SMBJ85A
SMBJ90
SMBJ90A
SMBJ100
SMBJ100A
SMBJ110
SMBJ110A
SMBJ120
SMBJ120A
SMBJ130
SMBJ130A
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
MF
MG
MH
MK
ML
MM
MN
MP
MQ
MR
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
SMBJ SERIES
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown voltage
V
BR
@I
T
(V)
Part number Marking code
(Note 1)
Min.
189
Max.
209
Test
current
I
T
(mA)
Working
stand-off
voltage
V
WM
(V)
Maximum
blocking
leakage
current
I
IB
@V
WM
(µA)
Maximum
peak
Maximum
impulse clamping
current
voltage
I
PP
V
C
@I
PP
(A)
(V)
(Note 2)
2.2
275
SMBJ170A
PR
1
170
1
Notes:
1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. For bidirectional use C or CA suffix for types SMBJ5.0 - SMBJ170
5. For bipolar types having VWM of 10 volts (SMBJ8.0C) and under, the ID limit is doubled.
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R5
SMBJxxxx
(Note 1)
H
R4
M4
Note:
1. "xxxx" defines voltage from 5.0V (SMBJ5.0) to 170V (SMBJ170A)
*: Optional available
G
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE P/N
EXAMPLE P/N
SMBJ20AHR5G
PART NO.
SMBJ20A
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
DESCRIPTION
AEC-Q101 qualified
Green compound
G
4
Version:O1701
SMBJ SERIES
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power rating Curve
100
P
PPM
, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
Fig.2 Pulse Derating Curve
125
100
10
75
1
50
25
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig.3 Clamping Power Pulse Waveform
Fig.4 Maximum Non-Repetitive Forward Surge
Current
100
140
I
PPM
, PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
0.5
1
Rise time tr=10μs to 100%
Peak value
I
PPM
IFSM, PEAK FORWARD SURGE
A
CURRENT (A)
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Half value-I
PPM
/2
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
10/1000μs, waveform
td
1.5
t, TIME (ms)
2
2.5
3
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
5
Version:O1701
NXP MCU
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