VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMB
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
SMB
1A
90 V, 100 V
0.78 V
1 mA at 125 °C
175 °C
Single die
1.0 mJ
DESCRIPTION
The VS-MBRS190-M3, VS-MBRS1100-M3 surface mount
Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.0 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.0
90, 100
870
0.63
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRS190-M3
90
VS-MBRS1100-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
L
= 147 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
1.0
870
50
1.0
0.5
mJ
A
A
UNITS
Revision: 26-Aug-14
Document Number: 95744
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
V
FM (1)
I
RM (1)
C
T
L
S
dV/dt
1A
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.78
0.62
0.5
1.0
42
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Notes
(1)
(2)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
R
thJA
DC operation
See fig. 4
DC operation
TEST CONDITIONS
VALUES
-55 to +175
36
UNITS
°C
°C/W
80
0.10
0.003
g
oz.
19/10
Case style SMB (similar to DO-214AA)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
Revision: 26-Aug-14
Document Number: 95744
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
I
F
- Instantaneous Forward Current (A)
10
Vishay Semiconductors
10
T
J
= 175 °C
I
R
- Reverse Current (mA)
1
0.1
0.01
0.001
0.0001
0.00001
0
20
40
T
J
= 125 °C
T
J
= 150 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
60
80
100
0.1
0.2
0.4
0.6
0.8
1.0
V
R
- Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
FM
- Forward Voltage Drop (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
100
10
P
DM
t
1
1
Single pulse
(thermal resistance)
0.1
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
.
0.01
0.1
1
10
100
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 26-Aug-14
Document Number: 95744
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
180
1.0
Vishay Semiconductors
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
0.4
Allowable Case Temperature (°C)
Average Power Loss (W)
170
160
150
140
130
120
DC
0.8
0.6
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
0.2
110
0
0
0.4
0.8
1.2
1.6
0
0.3
0.6
0.9
1.2
1.5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 26-Aug-14
Document Number: 95744
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
S
3
1
4
100
5
-M3
6
2
-
-
-
-
-
-
Vishay Semiconductors product
Schottky MBR series
S = SMB
Current rating (1 = 1 A)
Voltage rating
90 = 90 V
100 = 100 V
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBRS190-M3/5BT
VS-MBRS1100-M3/5BT
PREFERRED PACKAGE CODE
5BT
5BT
MINIMUM ORDER QUANTITY
3200
3200
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95401
www.vishay.com/doc?95403
www.vishay.com/doc?95404
www.vishay.com/doc?95516
Revision: 26-Aug-14
Document Number: 95744
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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