RF Power Products
Selector Guide
The global leader in RF innovation and technology for more than
60 years, NXP offers RF power transistors for communication
and industrial applications serving these markets:
•
•
•
•
•
•
wireless infrastructure
industrial, scientific, medical (ISM) and broadcast
2--way radio
aerospace and defense
cooking
low power
Table of Contents
With products ranging from 1.8 mW to 1.8 kW and from DC to
6000 MHz, using LDMOS, GaN and GaAs technologies, NXP
offers the broadest portfolio of RF power transistors.
How to Use This Selector Guide
Download this selector guide’s PDF file (SG46 R44) from
www.nxp.com/RFSelectorGuide.
Using the color bar below, click the frequency band of your
choice to view our list of recommended RF power transistors.
p. 5
1 MHz 600
p. 7
960
p. 10
p. 11
1800
p. 14
2700
p. 16
3800
p. 17
6000
2200
Using the RF Power Product Portfolio graphical representation
that begins on p. 5, choose a part with the desired output power
and frequency, and click that product’s corresponding page
number to be taken to parametric information for that part.
Page
Online Access to NXP Semiconductor Data . . . . . . . . . . . . 3
RF Power Product Portfolio . . . . . . . . . . . . . . . . . . . . . . . . . . 5
RF Cellular Infrastructure . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
450–1000 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1450–2200 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2300–2690 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3400–3800 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
RF ISM and Broadcast . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Wideband GaN — 1–2500 MHz . . . . . . . . . . . . . . . . . . 23
Wideband LDMOS — 1–2000 MHz . . . . . . . . . . . . . . . 23
ISM and Broadcast LDMOS — 1–600 MHz . . . . . . . . 23
UHF Broadcast LDMOS — 470–860 MHz . . . . . . . . . 24
ISM LDMOS — 700–1300 MHz . . . . . . . . . . . . . . . . . . 24
ISM LDMOS — 2400–2500 MHz . . . . . . . . . . . . . . . . . 24
RF Mobile Radio and General Purpose Drivers . . . . . . . . 25
7–12 V LDMOS — 1–1000 MHz . . . . . . . . . . . . . . . . . . 25
RF Aerospace and Defense . . . . . . . . . . . . . . . . . . . . . . . . 26
HF, VHF and UHF Radar — 1–1000 MHz . . . . . . . . . . 26
Avionics — 960–1215 MHz . . . . . . . . . . . . . . . . . . . . . . 27
L--Band Radar — 1200–1400 MHz . . . . . . . . . . . . . . . . 28
S--Band Radar — 2700–3500 MHz . . . . . . . . . . . . . . . . 28
Communications and Electronic Warfare — 1–2700 MHz 29
RF Cooking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
915 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
RF Low Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
RF General Purpose Amplifiers . . . . . . . . . . . . . . . . . . . 32
RF Linear Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
RF Low Noise Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . 34
RF Control Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
ADAM (Advanced Doherty Alignment Module) . . . 35
Digital Step Attenuator . . . . . . . . . . . . . . . . . . . . . . . . 35
RF GaAs Linear Power Transistors . . . . . . . . . . . . . . . 36
RF Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . . 40
Applications and Product Literature . . . . . . . . . . . . . . . . . . 42
Selector Guide Product Index . . . . . . . . . . . . . . . . . . . . . . . 43
©
2017 NXP B.V.
NXP Semiconductors
RF Power Products Selector Guide
1
Access Data Online
Available online are part number search, the product
library, documentation library, software and tools library,
application sites, product sites, sales and support, training
and where to buy at the following URL:
http://www.nxp.com.
See the RF Design Resources at
http://www.nxp.com/RF
for specific RF product
support information for:
•
Data sheets
•
Applications notes
•
Selector guide
•
Packaging information
•
Application information
•
Models
•
MTTF calculators
•
.s2p files
•
Events
•
RF Product Selector
The current release of the FET
2
and MET models
are available for these tools:
•
Agilent EEsof ADS nonlinear circuit simulator
•
AWR Microwave Office
The RF High Power Model Library is available for
all major computer platforms supported by these
simulators.
For more information and latest releases
supported, go to
http://www.nxp.com/RF/models.
RF Power Electromigration MTTF
Calculation Program
Program Functionality
This MTTF/FIT calculator software is designed to
assist our customers in estimating the LDMOS device
reliability in terms of electromigration wear--out failures.
The program evaluates LDMOS device Mean--Time--
To--Failure (MTTF) using Black’s Equations. It also
estimates the Failures--in--Time (FIT) value at the
expected base transceiver system (BTS) life span.
About the Program
This program is designed for estimating LDMOS
device electromigration failure rate. According to
electromigration theory, there are two wear--out modes
for silicon components employing aluminum as a
metallization material:
•
The formation of an electrically open circuit due to
the condensation of vacancies in the aluminum to
form voids.
•
The growth of etch--pits into silicon by the dissolu-
tion of silicon into aluminum (to short out an under-
lying junction).
The program also estimates the FIT value at the
expected base BTS life span. The calculation requires
input for the drain voltage, drain currents, case
temperature, RF input/output power and expected BTS
life.
MTTF Calculator Availability
RF Power MTTF calculators are being added to the
NXP web site for all RF Power LDMOS discrete
transistor and IC devices. MTTF calculators are
available at
http://www.nxp.com/RF/calculators.
Design Tools and Data Available
Online for Your Design- Process
-in
RF High Power Models
NXP continues to populate its RF High Power
Model Library with FET
2
, MET and Root models. All
product models available in the RF High Power Model
Library (FET
2
, MET and Root) include package, bond
wire and internal matching network effects.
The FET
2
and MET models for RF High Power
transistors and RF ICs are nonlinear models that
examine both electrical and thermal phenomena and
can account for dynamic self--heating effects of device
performance. They are specifically tailored to model
high power RF transistors and RF ICs used in wireless
base station applications.
Implemented in the Keysight Advanced Design
System and AWR Microwave Office®, the FET
2
and
MET models are capable of performing small--signal,
large--signal, harmonic-- balance, noise and transient
simulations. Because of their ability to simulate
self--heating effects, the FET
2
and MET models are
more accurate than existing models, enabling circuit
designers to predict prototype performance more
accurately and reduce design cycle time.
NXP Semiconductors
RF Power Products Selector Guide
3
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