NXP Semiconductors
Technical Data
Document Number: A3T21H450W23S
Rev. 1, 08/2017
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2110 to 2200 MHz.
2100 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
V
DD
= 30 Vdc, I
DQA
= 600 mA, V
GSB
= 0.5 Vdc, P
out
= 87 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
2110 MHz
2155 MHz
2200 MHz
G
ps
(dB)
15.1
15.7
15.3
D
(%)
48.5
48.9
47.2
Output PAR
(dB)
8.1
7.9
7.8
ACPR
(dBc)
–30.2
–30.2
–33.7
A3T21H450W23SR6
2110–2200 MHz, 87 W AVG., 30 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
Advanced high performance in--package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate--source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating
conditions
Designed for digital predistortion error correction systems
RF
inA
/V
GSA
1
ACP-
-1230S-
-4L2S
Carrier
6 VBW
A
(2)
5 RF
outA
/V
DSA
(1)
4 RF
outB
/V
DSB
RF
inB
/V
GSB
2
Peaking
(Top View)
3 VBW
B
(2)
Figure 1. Pin Connections
1. Pin connections 4 and 5 are DC coupled
and RF independent.
2. Device cannot operate with V
DD
current
supplied through pin 3 and pin 6.
2017 NXP B.V.
A3T21H450W23SR6
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
–0.5, +65
–6.0, +10
32, +0
–65 to +150
–40 to +150
–40 to +225
Unit
Vdc
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 87 W Avg., W--CDMA, 30 Vdc, I
DQA
= 600 mA,
V
GSB
= 0.5 Vdc, 2155 MHz
Symbol
R
JC
Value
(2,3)
0.16
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
2
C3
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics - Side A, Carrier
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 180
Adc)
Gate Quiescent Voltage
(V
DD
= 30 Vdc, I
D
= 600 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.8 Adc)
On Characteristics - Side B, Peaking
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 360
Adc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
1.
2.
3.
4.
V
GS(th)
V
DS(on)
0.8
0.0
1.2
0.15
1.6
0.3
Vdc
Vdc
V
GS(th)
V
GSA(Q)
V
DS(on)
1.4
2.2
0.0
1.8
2.6
0.15
2.3
3.0
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Side A and Side B are tied together for these measurements.
(continued)
A3T21H450W23SR6
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2,3)
(In NXP Doherty Production Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQA
= 600 mA, V
GSB
= 0.5 Vdc,
P
out
= 87 W Avg., f = 2200 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
P
out
@ 3 dB Compression Point, CW
Adjacent Channel Power Ratio
G
ps
D
P3dB
ACPR
14.2
44.0
55.0
—
15.4
47.0
55.9
–35.2
16.2
—
—
–30.9
dB
%
dBm
dBc
Load Mismatch
(3)
(In NXP Doherty Production Test Fixture, 50 ohm system) I
DQA
= 600 mA, V
GSB
= 0.5 Vdc, f = 2155 MHz, 12
sec(on),
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 400 W Pulsed CW Output Power
(3 dB Input Overdrive from 251 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance
(3)
(In NXP Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQA
= 600 mA, V
GSB
= 0.5 Vdc,
2110–2200 MHz Bandwidth
P
out
@ 3 dB Compression Point
(4)
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2200 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 90 MHz Bandwidth @ P
out
= 87 W Avg.
Gain Variation over Temperature
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P3dB
—
—
501
–19
—
—
W
VBW
res
G
F
G
P1dB
—
—
—
—
180
0.7
0.007
0.007
—
—
—
—
MHz
dB
dB/C
dB/C
Table 5. Ordering Information
Device
A3T21H450W23SR6
1.
2.
3.
4.
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
ACP--1230S--4L2S
V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurements made with device in an asymmetrical Doherty configuration.
P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
3
V
GGA
C1
C18
V
DDA
R4
C2
R2
C9
C11
C12
D94048
C4
C3
C
C15
C17
Z1
R1
P
C6
C5
R3
CUT OUT AREA
C16
A3T21H450W23S
Rev. 1R3
C7
C8
C13
C10
C14
R5
V
GGB
C19
V
DDB
Note: V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Figure 2. A3T21H450W23SR6 Characterization Test Circuit Component Layout
Table 6. A3T21H450W23SR6 Characterization Test Circuit Component Designations and Values
Part
C1, C8, C9, C10, C12, C14
C2, C7, C11, C13
C3, C5
C4
C6
C15
C16
C17
C18, C19
R1
R2, R3
R4, R5
Z1
PCB
Description
10
F
Chip Capacitor
9.1 pF Chip Capacitor
9.1 pF Chip Capacitor
1 pF Chip Capacitor
0.4 pF Chip Capacitor
5.1 pF Chip Capacitor
15 pF Chip Capacitor
0.2 pF Chip Capacitor
470
F,
63 V Electrolytic Capacitor
50
,
10 W Chip Resistor
3.9
,
1/4 W Chip Resistor
1.8 k, 1/4 W Chip Resistor
2000--2300 MHz Band, 90, 5 dB Directional Coupler
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
C5750X7S2A106M230KB
ATC100B9R1CT500XT
ATC600F9R1BT250XT
ATC100B1R0CT500XT
ATC100B0R4CT500XT
ATC600F5R1BT250XT
ATC100B150JT500XT
ATC100B0R2BT500XT
MCGPR63V477M13X26-RH
C10A50Z4
CRCW12063R90FKEA
CRCW12061K80FKEA
X3C21P1-05S
D94048
Manufacturer
TDK
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Multicomp
Anaren
Vishay
Vishay
Anaren
MTL
A3T21H450W23SR6
4
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 2110–2200 MHz
16
15.8
G
ps
, POWER GAIN (dB)
15.6
15.4
15.2
15
14.8
14.6
14.4
14.2
2070
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
2090
2110
2130
2150
2170
2190
2210
f, FREQUENCY (MHz)
PARC
G
ps
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
ACPR
V
DD
= 30 Vdc, P
out
= 87 W (Avg.), I
DQA
= 600 mA, V
GSB
= 0.5 Vdc
D
49
48
47
46
–29
ACPR (dBc)
–31
–33
–35
–37
–39
2230
D
, DRAIN
EFFICIENCY (%)
–1.7
–1.8
–1.9
–2.0
–2.1
–2.2
PARC (dB)
ACPR (dBc)
–28
–29
–30
–31
–32
–33
–34
D
DRAIN EFFICIENCY (%)
16.2
50
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 87 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc)
–20
–30
V
DD
= 30 Vdc, P
out
= 87 W (PEP), I
DQA
= 600 mA, V
GSB
= 0.5 Vdc,
Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 2155 MHz
IM3--U
IM3--L
IM5--L
IM5--U
–40
–50
–60
–70
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
200
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
16.5
G
ps
, POWER GAIN (dB)
16
15.5
15
14.5
14
1
0
–1
–2
–3
–4
–5
20
–1 dB = 53.5 W
–2 dB = 87.6 W
ACPR
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
50
80
–3 dB = 118.7 W
110
140
35
30
170
G
ps
45
PARC
40
V
DD
= 30 Vdc, I
DQA
= 600 mA, V
GSB
= 0.5 Vdc, f = 2155 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
D
60
55
50
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
5
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